IGBT Transistors / Modules
The Results of IGBT Transistors / Modules 4552
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results: 4552
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
LCSC Part#
Package
Packaging
Operating Temperature
Collector Current (Ic)
Collector-Emitter Breakdown Voltage (Vces)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
LCSC Part#
Package
Packaging
Operating Temperature
Collector Current (Ic)
Collector-Emitter Breakdown Voltage (Vces)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Min: 1
Mult: 1
Not available now
FD1200R17HP4-K_B2Infineon Technologies
1.2kA 1.7kV IGBT Transistors / Modules ROHS
C535294-Tray-40℃~+150℃@(Tj)1.2kA1.7kV2.25V@15V,1.2kA
Min: 1
Mult: 1
Not available now
FZ1200R12HE4Infineon Technologies
IGBT Transistors / Modules ROHS
C535581-Tray----