IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
4553
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
4553
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
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| | Min: 1 Mult: 1 | 0  | IRGP4760DPBF | Infineon Technologies | 325W 90A 650V TO-247AC IGBT Transistors / Modules ROHS | C3193721 | TO-247AC | Tube-packed | 140ns | 325W | 70ns | -40℃~+175℃@(Tj) | 90A | 650V | - | - | 2V@15V,48A | 145nC | 170ns | 1mJ | 1.7mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP4760PBF | Infineon Technologies | 325W 90A 650V TO-247AC IGBT Transistors / Modules ROHS | C3193776 | TO-247AC | Tube-packed | 140ns | 325W | 70ns | -40℃~+175℃@(Tj) | 90A | 650V | - | - | 2V@15V,48A | 145nC | - | 1mJ | 1.7mJ | ||
| | Min: 1 Mult: 1 | 0 | IRG7PH35U-EP | Infineon Technologies | 210W 55A 1.2kV TO-247AD IGBT Transistors / Modules ROHS | C3193786 | TO-247AD | Bag-packed | 160ns | 210W | 30ns | -55℃~+175℃@(Tj) | 55A | 1.2kV | - | - | 2.2V@15V,20A | 130nC | - | 0.62mJ | 1.06mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP50B60PD1-EP | Infineon Technologies | 390W 75A 600V NPT (non-penetrating type) TO-247AD IGBT Transistors / Modules ROHS | C3193806 | TO-247AD | Bag-packed | 130ns | 390W | 30ns | - | 75A | 600V | - | NPT (non-penetrating type) | 2.85V@15V,50A | 205nC | 42ns | 0.375mJ | 0.255mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP4790D-EPBF | Infineon Technologies | 455W 140A 650V TO-247AD IGBT Transistors / Modules ROHS | C3193821 | TO-247AD | Bag-packed | - | 455W | - | -40℃~+175℃@(Tj) | 140A | 650V | - | - | - | - | 170ns | 2.2mJ | 2.5mJ | ||
| | Min: 1 Mult: 1 | 0 | IRG8P25N120KD-EPBF | Infineon Technologies | 180W 40A 1.2kV TO-247AD IGBT Transistors / Modules ROHS | C3193846 | TO-247AD | Bag-packed | 170ns | 180W | 20ns | -40℃~+150℃@(Tj) | 40A | 1.2kV | - | - | 2V@15V,15A | 135nC | 70ns | 0.9mJ | 0.8mJ | ||
| | Min: 1 Mult: 1 | 0 | HGTD10N40F1S | HARRIS | 75W 12A 400V TO-252(DPAK) IGBT Transistors / Modules ROHS | C3193946 | TO-252(DPAK) | Bag-packed | - | 75W | - | -55℃~+150℃@(Tj) | 12A | 400V | - | - | 2.5V@10V,5A | 13.4nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGT1S2N120CN | onsemi | 104W 13A 1.2kV NPT (non-penetrating type) TO-262 IGBT Transistors / Modules ROHS | C3193976 | TO-262 | Tube-packed | 205ns | 104W | 25ns | -55℃~+150℃@(Tj) | 13A | 1.2kV | - | NPT (non-penetrating type) | 2.4V@15V,2.6A | 30nC | - | 0.355mJ | 0.096mJ | ||
| | Min: 1 Mult: 1 | 0 | HGT1S7N60B3DS | HARRIS | 60W 14A 600V TO-263AB IGBT Transistors / Modules ROHS | C3194026 | TO-263AB | Bag-packed | - | 60W | - | -55℃~+150℃@(Tj) | 14A | 600V | - | - | - | - | 37ns | 0.12mJ | 0.16mJ | ||
| | Min: 1 Mult: 1 | 0 | BSS88 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3195358 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG2G50US60 | onsemi | 250W 50A 600V PM-7-GA IGBT Transistors / Modules ROHS | C3190017 | PM-7-GA | Bag-packed | - | 250W | - | -40℃~+150℃@(Tj) | 50A | 600V | 3.46nF@30V | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG2G400US60 | onsemi | 1.136kW 400A 600V PM-7-IA IGBT Transistors / Modules ROHS | C3190027 | PM-7-IA | Box-packed | - | 1.136kW | - | -40℃~+150℃@(Tj) | 400A | 600V | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGT1S12N60B3S | HARRIS | 104W 27A 600V D2PAK(TO-263) IGBT Transistors / Modules ROHS | C3190542 | D2PAK(TO-263) | Bag-packed | 150ns | 104W | 26ns | -55℃~+150℃@(Tj) | 27A | 600V | - | - | 2.1V@15V,12A | 68nC | - | 0.25mJ | 0.304mJ | ||
| | Min: 1 Mult: 1 | 0 | HGT1S12N60C3D | HARRIS | 104W 24A 600V I2PAK(TO-262) IGBT Transistors / Modules ROHS | C3191157 | I2PAK(TO-262) | Bag-packed | - | 104W | - | -40℃~+150℃@(Tj) | 24A | 600V | - | - | - | - | 40ns | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS4630DPBF | Infineon Technologies | 206W 47A 600V TO-263 IGBT Transistors / Modules ROHS | C3191792 | TO-263 | Tube-packed | - | 206W | - | -40℃~+175℃@(Tj) | 47A | 600V | - | - | - | - | 100ns | 0.35mJ | 0.095mJ | ||
| | Min: 1 Mult: 1 | 0 | HGTP15N50E1 | HARRIS | 75W 15A 500V TO-220 IGBT Transistors / Modules ROHS | C3193393 | TO-220 | Bag-packed | - | 75W | - | -55℃~+150℃@(Tj) | 15A | 500V | - | - | 3.2V@20V,35A | 33nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP12N60C3R | HARRIS | 104W 24A 600V TO-220-3 IGBT Transistors / Modules ROHS | C3193428 | TO-220-3 | Bag-packed | 120ns | 104W | 37ns | -55℃~+150℃@(Tj) | 24A | 600V | - | - | 2.2V@15V,12A | 71nC | 37ns | 0.34mJ | 0.4mJ | ||
| | Min: 1 Mult: 1 | 0 | HGTB12N60D1C | HARRIS | 75W 12A 600V TO-220-5 IGBT Transistors / Modules ROHS | C3193468 | TO-220-5 | Bag-packed | - | 75W | - | -55℃~+150℃@(Tj) | 12A | 600V | - | - | 2.7V@15V,10A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP3N60C3 | HARRIS | 33W 6A 600V TO-220AB IGBT Transistors / Modules ROHS | C3193518 | TO-220AB | Bag-packed | - | 33W | - | -40℃~+150℃@(Tj) | 6A | 600V | - | - | 2V@15V,3A | 17.3nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJH1CV7DPQ-E0#T2 | RENESAS | 320W 70A 1.2kV TO-247 IGBT Transistors / Modules ROHS | C3193613 | TO-247 | Bag-packed | 185ns | 320W | 53ns | - | 70A | 1.2kV | - | - | 2.3V@15V,35A | 166nC | 200ns | 2.5mJ | 3.2mJ | ||
| | Min: 1 Mult: 1
Full Reel: 2500
| 0 | ISL9V3036D3ST | onsemi | 150W 21A 360V TO-252(DPAK) IGBT Transistors / Modules ROHS | C3193943 | TO-252(DPAK) | Tape & Reel (TR) | 4.8us | 150W | - | -40℃~+175℃@(Tj) | 21A | 360V | - | - | 1.6V@4V,6A | 17nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTD8P50G1S | HARRIS | 66W 12A 500V TO-252AA IGBT Transistors / Modules ROHS | C3193963 | TO-252AA | Bag-packed | - | 66W | - | -55℃~+150℃@(Tj) | 12A | 500V | - | - | 2.9V@15V,3A | 30nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGSL4B60KD1PBF | Infineon Technologies | 63W 11A 600V NPT (non-penetrating type) TO-262 IGBT Transistors / Modules ROHS | C3193978 | TO-262 | Bag-packed | 100ns | 63W | 22ns | -55℃~+175℃@(Tj) | 11A | 600V | - | NPT (non-penetrating type) | 2.5V@15V,4A | 12nC | 93ns | 0.047mJ | 0.073mJ | ||
| | Min: 1 Mult: 1 | 0 | HGT1S12N60B3DS | HARRIS | 104W 27A 600V TO-263AB IGBT Transistors / Modules ROHS | C3194028 | TO-263AB | Bag-packed | - | 104W | - | -55℃~+150℃@(Tj) | 27A | 600V | - | - | - | - | - | 0.25mJ | 0.304mJ | ||
| | Min: 1 Mult: 1 | 0 | IGTM10N50 | HARRIS | 10A 500V TO-3 IGBT Transistors / Modules ROHS | C3194088 | TO-3 | Bag-packed | - | - | - | - | 10A | 500V | - | - | - | - | - | - | - |