IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
4553
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
4553
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
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Total Gate Charge (Qg@Ic,Vge)
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Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
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| | Min: 1 Mult: 1 | 0  | IRGP4620DPBF | Infineon Technologies | 140W 32A 600V TO-247AC IGBT Transistors / Modules ROHS | C3193747 | TO-247AC | Tube-packed | 83ns | 140W | 31ns | -40℃~+175℃@(Tj) | 32A | 600V | - | - | 1.85V@15V,12A | 25nC | 68ns | 0.225mJ | 0.075mJ | ||
| | Min: 1 Mult: 1 | 0 | FGA70N30TDTU | onsemi | 201W 300V TO-3PN IGBT Transistors / Modules ROHS | C3194127 | TO-3PN | Tube-packed | - | 201W | - | -55℃~+150℃@(Tj) | - | 300V | - | - | 1.5V@15V,20A | 125nC | 21ns | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG30N60C3 | HARRIS | 208W 63A 600V SUPER-247(TO-274AA) IGBT Transistors / Modules ROHS | C3193345 | SUPER-247(TO-274AA) | Bag-packed | 320ns | 208W | 40ns | -55℃~+150℃@(Tj) | 63A | 600V | - | - | 1.8V@15V,30A | 250nC | - | 2.5mJ | 1.05mJ | ||
| | Min: 1 Mult: 1 | 0 | HGTP15N50C1 | HARRIS | 75W 15A 500V TO-220 IGBT Transistors / Modules ROHS | C3193380 | TO-220 | Bag-packed | - | 75W | - | -55℃~+150℃@(Tj) | 15A | 500V | - | - | 3.2V@20V,35A | 33nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP15N40C1 | HARRIS | 75W 15A 400V TO-220 IGBT Transistors / Modules ROHS | C3193385 | TO-220 | Bag-packed | - | 75W | - | -55℃~+150℃@(Tj) | 15A | 400V | - | - | 3.2V@20V,35A | 33nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGP20N6S2D | onsemi | 125W 28A 600V TO-220-3 IGBT Transistors / Modules ROHS | C3193415 | TO-220-3 | Tube-packed | 87ns | 125W | 7.7ns | -55℃~+150℃@(Tj) | 28A | 600V | - | - | 2.7V@15V,7A | 30nC | 31ns | 0.058mJ | 0.025mJ | ||
| | Min: 1 Mult: 1 | 0 | MGW20N120 | MOTOROLA | 174W 28A 1.2kV TO-247 IGBT Transistors / Modules ROHS | C3193630 | TO-247 | Bag-packed | 190ns | 174W | 88ns | -55℃~+150℃@(Tj) | 28A | 1.2kV | - | - | 4.99V@15V,20A | 62nC | - | 1.65mJ | - | ||
| | Min: 1 Mult: 1 | 0 | IRGP4630DPBF | Infineon Technologies | 206W 47A 600V TO-247AC IGBT Transistors / Modules ROHS | C3193775 | TO-247AC | Tube-packed | 105ns | 206W | 40ns | - | 47A | 600V | - | - | 1.95V@15V,18A | 35nC | 100ns | 0.35mJ | 0.095mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP4740DPBF | Infineon Technologies | 250W 60A 650V TO-247AD IGBT Transistors / Modules ROHS | C3193800 | TO-247AD | Tube-packed | 73ns | 250W | 24ns | -40℃~+175℃@(Tj) | 60A | 650V | - | - | 2V@15V,24A | 70nC | 170ns | 0.24mJ | 0.52mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP4640-EPBF | Infineon Technologies | 250W 65A 600V TO-247AD IGBT Transistors / Modules ROHS | C3193840 | TO-247AD | Tube-packed | - | 250W | - | -40℃~+175℃@(Tj) | 65A | 600V | - | - | - | - | - | 0.6mJ | 0.1mJ | ||
| | Min: 1 Mult: 1 | 0 | IGTM10N40A | HARRIS | 10A 400V TO-3 IGBT Transistors / Modules ROHS | C3194090 | TO-3 | Bag-packed | - | - | - | - | 10A | 400V | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGA50N100BNTTU | onsemi | 156W 50A 1kV NPT (non-penetrating type) TO-3P IGBT Transistors / Modules ROHS | C3194100 | TO-3P | Tube-packed | 243ns | 156W | 34ns | -55℃~+150℃@(Tj) | 50A | 1kV | - | NPT (non-penetrating type) | 2.9V@15V,60A | 257nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC40U | Infineon Technologies | TO-220 IGBT Transistors / Modules ROHS | C2939 | TO-220 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP35R12N2T7B11BPSA1 | Infineon Technologies | 20mW 35A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190270 | - | Tray | - | 20mW | - | -40℃~+175℃@(Tj) | 35A | 1.2kV | 6.62nF@25V | FS(Field Stop) | 1.6V@15V,35A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGT1S3N60A4DS9A | onsemi | 70W 17A 600V D2PAK(TO-263) IGBT Transistors / Modules ROHS | C3190544 | D2PAK(TO-263) | Tube-packed | 73ns | 70W | 6ns | -55℃~+150℃@(Tj) | 17A | 600V | - | - | 2.7V@15V,3A | 21nC | 29ns | 0.025mJ | 0.037mJ | ||
| | Min: 1 Mult: 1 | 0 | HGT1S15N120C3 | HARRIS | 164W 35A 1.2kV I2PAK(TO-262) IGBT Transistors / Modules ROHS | C3191159 | I2PAK(TO-262) | Bag-packed | - | 164W | - | -55℃~+150℃@(Tj) | 35A | 1.2kV | - | - | 3.5V@15V,15A | 100nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTD3N60C3 | HARRIS | 33W 6A 600V IPAK IGBT Transistors / Modules ROHS | C3191169 | IPAK | Bag-packed | - | 33W | - | -40℃~+150℃@(Tj) | 6A | 600V | - | - | 2V@15V,3A | 13.8nC | 10ns | - | - | ||
| | Min: 1 Mult: 1 | 0 | SKB15N60 | Infineon Technologies | 139W 31A 600V NPT (non-penetrating type) TO-263 IGBT Transistors / Modules ROHS | C3191784 | TO-263 | Bag-packed | 234ns | 139W | 32ns | -55℃~+150℃@(Tj) | 31A | 600V | - | NPT (non-penetrating type) | 2.4V@15V,15A | 76nC | 279ns | - | 0.57mJ | ||
| | Min: 1 Mult: 1 | 0 | HGTH20N50C1 | HARRIS | 100W 20A 500V TO-218 IGBT Transistors / Modules ROHS | C3193366 | TO-218 | Bag-packed | - | 100W | - | -55℃~+150℃@(Tj) | 20A | 500V | - | - | 3.2V@20V,35A | 33nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG2G50US60 | onsemi | 250W 50A 600V PM-7-GA IGBT Transistors / Modules ROHS | C3190017 | PM-7-GA | Bag-packed | - | 250W | - | -40℃~+150℃@(Tj) | 50A | 600V | 3.46nF@30V | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG2G400US60 | onsemi | 1.136kW 400A 600V PM-7-IA IGBT Transistors / Modules ROHS | C3190027 | PM-7-IA | Box-packed | - | 1.136kW | - | -40℃~+150℃@(Tj) | 400A | 600V | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGT1S12N60B3S | HARRIS | 104W 27A 600V D2PAK(TO-263) IGBT Transistors / Modules ROHS | C3190542 | D2PAK(TO-263) | Bag-packed | 150ns | 104W | 26ns | -55℃~+150℃@(Tj) | 27A | 600V | - | - | 2.1V@15V,12A | 68nC | - | 0.25mJ | 0.304mJ | ||
| | Min: 1 Mult: 1 | 0 | HGT1S12N60C3D | HARRIS | 104W 24A 600V I2PAK(TO-262) IGBT Transistors / Modules ROHS | C3191157 | I2PAK(TO-262) | Bag-packed | - | 104W | - | -40℃~+150℃@(Tj) | 24A | 600V | - | - | - | - | 40ns | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS4630DPBF | Infineon Technologies | 206W 47A 600V TO-263 IGBT Transistors / Modules ROHS | C3191792 | TO-263 | Tube-packed | - | 206W | - | -40℃~+175℃@(Tj) | 47A | 600V | - | - | - | - | 100ns | 0.35mJ | 0.095mJ | ||
| | Min: 1 Mult: 1 | 0 | HGTP15N50E1 | HARRIS | 75W 15A 500V TO-220 IGBT Transistors / Modules ROHS | C3193393 | TO-220 | Bag-packed | - | 75W | - | -55℃~+150℃@(Tj) | 15A | 500V | - | - | 3.2V@20V,35A | 33nC | - | - | - |