IGBTs | Triode/MOS Tube/Transistor

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Gate-Emitter Threshold Voltage (Vge(th)@Ic)

Operating Temperature

Collector Current (Ic)

Diode Forward Voltage (Vf@If)

Power Dissipation (Pd)

Input Capacitance (Cies@Vce)

Collector-Emitter Breakdown Voltage (Vces)

Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)

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Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	LCSC Part#	Package	Packaging	Power Dissipation (Pd)	Turn?off Delay Time (Td(off))	Operating Temperature	Turn?on Delay Time (Td(on))	Collector Current (Ic)	Collector-Emitter Breakdown Voltage (Vces)	Type	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Input Capacitance (Cies@Vce)	Diode Forward Voltage (Vf@If)

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	LCSC Part#	Package	Packaging	Power Dissipation (Pd)	Turn?off Delay Time (Td(off))	Operating Temperature	Turn?on Delay Time (Td(on))	Collector Current (Ic)	Collector-Emitter Breakdown Voltage (Vces)	Type	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Input Capacitance (Cies@Vce)	Diode Forward Voltage (Vf@If)
Datasheet		Min: 1 Mult: 1	0	JT015N065FED	Jilin Sino-Microelectronics	31W 30A 650V TO-220MF IGBTs ROHS		C2693274	TO-220MF	Tube-packed	31W	-	-55℃~+150℃@(Tj)	-	30A	650V	-	6.5V@250uA	-	1.6V@15A,15V	-	-	-	880pF@25V	1.4V@15A