IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5094
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5094
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
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| | Min: 1 Mult: 1
Full Reel: 2500
| 0  | IKD04N60RC2ATMA1 | Infineon Technologies | 36.6W 8A 600V FS(Field Stop) TO-252-3 IGBT Transistors / Modules ROHS | C3191763 | TO-252-3 | Tape & Reel (TR) | 90ns | 36.6W | 4ns | -40℃~+175℃@(Tj) | 8A | 600V | - | FS(Field Stop) | 2.3V@15V,4A | 24nC | 80ns | 0.04mJ | 0.1mJ | ||
| | Min: 1 Mult: 1 | 0 | SKB15N60E8151 | Infineon Technologies | 139W 31A 600V NPT (non-penetrating type) TO-263 IGBT Transistors / Modules ROHS | C3191798 | TO-263 | Bag-packed | - | 139W | - | -55℃~+150℃@(Tj) | 31A | 600V | - | NPT (non-penetrating type) | - | - | 279ns | - | 0.57mJ | ||
| | Min: 1 Mult: 1 | 0 | IM240M6Z1BALMA1 | Infineon Technologies | 8.9W 600V SOP-23 IGBT Transistors / Modules ROHS | C3192965 | SOP-23 | Tube-packed | - | 8.9W | - | -40℃~+125℃ | - | 600V | - | - | 2.6V@15V,4A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGT1S14N41G3VLS | onsemi | 136W 25A 445V TO-263AB IGBT Transistors / Modules ROHS | C3194029 | TO-263AB | Bag-packed | - | 136W | - | -55℃~+175℃@(Tj) | 25A | 445V | - | - | - | 26nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXYA20N120B4HV | Littelfuse/IXYS | 375W 76A 1.2kV PT (Through Type) TO-263HV IGBT Transistors / Modules ROHS | C3194038 | TO-263HV | Tube-packed | 200ns | 375W | 15ns | -55℃~+175℃@(Tj) | 76A | 1.2kV | - | PT (Through Type) | 2.1V@15V,20A | 44nC | 47ns | 1.6mJ | 3.9mJ | ||
| | Min: 1 Mult: 1 | 0 | IXYA20N120C4HV | Littelfuse/IXYS | 375W 68A 1.2kV PT (Through Type) TO-263HV IGBT Transistors / Modules ROHS | C3194042 | TO-263HV | Tube-packed | 160ns | 375W | 14ns | -55℃~+175℃@(Tj) | 68A | 1.2kV | - | PT (Through Type) | 2.5V@15V,20A | 44nC | 53ns | 1mJ | 4.4mJ | ||
| | Min: 1 Mult: 1 | 0 | IXYA30N120A4HV | Littelfuse/IXYS | 500W 106A 1.2kV PT (Through Type) TO-263HV IGBT Transistors / Modules ROHS | C3194045 | TO-263HV | Tube-packed | 235ns | 500W | 15ns | -55℃~+175℃@(Tj) | 106A | 1.2kV | - | PT (Through Type) | 1.9V@15V,25A | 57nC | 42ns | 3.4mJ | 4mJ | ||
| | Min: 1 Mult: 1 | 0 | SGT40T120FD1P7 | Hangzhou Silan Microelectronics | TO-247-3 IGBT Transistors / Modules ROHS | C2897649 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP50R12W2T7PB11BPSA1 | Infineon Technologies | 20mW 50A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190237 | - | Tray | - | 20mW | - | -40℃~+175℃@(Tj) | 50A | 1.2kV | 11.1nF@25V | FS(Field Stop) | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | 900545HOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171013 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F4150R06KL4BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171124 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGB3245G2 | onsemi | IGBT Transistors / Modules ROHS | C3171129 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | CSM350KN | Littelfuse/IXYS | IGBT Transistors / Modules ROHS | C3171135 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP4046DPP-90#T2F | RENESAS | IGBT Transistors / Modules ROHS | C3171147 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP30H1DPP-M1#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171148 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG40N60B3-FS | onsemi | IGBT Transistors / Modules ROHS | C3171156 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1800R17HP4B29BOSA2 | Infineon Technologies | 11.5kW 1.8kA 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3171272 | - | Tray | - | 11.5kW | - | -40℃~+150℃@(Tj) | 1.8kA | 1.7kV | 145nF@25V | FS(Field Stop) | 2.25V@15V,1.8kA | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ3600R12KE3NOSA1 | Infineon Technologies | 15kW 4.7kA 1.2kV IGBT Transistors / Modules ROHS | C3171273 | - | Bag-packed | - | 15kW | - | -40℃~+125℃@(Tj) | 4.7kA | 1.2kV | 260nF@25V | - | 2.15V@15V,3.6kA | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS6B60KTRLPBF | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171297 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG8P40N120KDEPB | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171299 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM75GB120DN2HOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171310 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MGP20N36CL | onsemi | IGBT Transistors / Modules ROHS | C3171311 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKW20N60TA | Infineon Technologies | 166W 40A 600V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS | C3171313 | TO-247-3 | Bag-packed | - | 166W | - | -40℃~+175℃@(Tj) | 40A | 600V | - | FS(Field Stop) | - | - | 41ns | 0.46mJ | 0.31mJ | ||
| | Min: 1 Mult: 1 | 0 | IRG4RC10SDTRPBF-IR | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171320 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP12N6001 | HARRIS | IGBT Transistors / Modules ROHS | C3171325 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - |