IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5094
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5094
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
|
Package
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Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Diode Forward Voltage (Vf@If)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Diode Forward Voltage (Vf@If)
|
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| | Min: 1 Mult: 1 | 0 | MG150HF12TFC2 | Yangzhou Yangjie Elec Tech | C2 IGBT Transistors / Modules ROHS | C20601999 | C2 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG200HF12LEC2 | Yangzhou Yangjie Elec Tech | C2 IGBT Transistors / Modules ROHS | C20602000 | C2 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG200HF12TFC2 | Yangzhou Yangjie Elec Tech | C2 IGBT Transistors / Modules ROHS | C20602001 | C2 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG450HF12TFC2 | Yangzhou Yangjie Elec Tech | C2 IGBT Transistors / Modules ROHS | C20602006 | C2 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG450HF12TLC2 | Yangzhou Yangjie Elec Tech | C2 IGBT Transistors / Modules ROHS | C20602007 | C2 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG50HF12TFC1 | Yangzhou Yangjie Elec Tech | C1 IGBT Transistors / Modules ROHS | C20602008 | C1 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NCE75TD120VTP | Wuxi NCE Power Semiconductor | TO-247P IGBT Transistors / Modules ROHS | C5124156 | TO-247P | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0  | F450R12KS4BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C7275647 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCGLQ75DDU120CTBL3NG | Microchip Tech | 470W 160A 1.2kV IGBT Transistors / Modules ROHS | C17400384 | - | Bag-packed | 470W | -55℃~+175℃@(Tj) | 160A | 1.2kV | 4.4nF@25V | - | 2.4V@15V,75A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKD04N60R6EDV1 | Infineon Technologies | TO-252-3-313 IGBT Transistors / Modules ROHS | C17263854 | TO-252-3-313 | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXGK82N120A3 | Littelfuse/IXYS | 1.25kW 260A 1.2kV PT (Through Type) TO-264 IGBT Transistors / Modules ROHS | C17303163 | TO-264 | Tube-packed | 1.25kW | -55℃~+150℃@(Tj) | 260A | 1.2kV | - | PT (Through Type) | 2.05V@15V,82A | 265ns | 34ns | 340nC | 12.5mJ | 5.5mJ | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 500
| 0 | IM241L6S1BAUMA1 | Infineon Technologies | 15W 600V SOP-23 IGBT Transistors / Modules ROHS | C17390972 | SOP-23 | Tape & Reel (TR) | 15W | -40℃~+150℃@(Tj) | - | 600V | - | - | 1.62V@15V,2A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | DDB6U104N16RRB37BPSA1 | Infineon Technologies | 20mW 50A 1.2kV IGBT Transistors / Modules ROHS | C17371934 | - | Tray | 20mW | - | 50A | 1.2kV | 3.3nF@25V | - | 2.8V@15V,50A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTH20N50E1D | HARRIS | 100W 20A 500V TO-218 IGBT Transistors / Modules ROHS | C17372328 | TO-218 | Bag-packed | 100W | -55℃~+150℃@(Tj) | 20A | 500V | - | - | 3.2V@20V,35A | - | - | 33nC | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F1225R12KT4GBOSA1 | Infineon Technologies | 160W 25A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17321177 | - | Tray | 160W | -40℃~+150℃ | 25A | 1.2kV | 1.45nF@25V | FS(Field Stop) | 2.15V@15V,25A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXGX120N120A3 | Littelfuse/IXYS | 830W 240A 1.2kV PT (Through Type) TO-247-3 IGBT Transistors / Modules ROHS | C17321210 | TO-247-3 | Tube-packed | 830W | -55℃~+150℃@(Tj) | 240A | 1.2kV | - | PT (Through Type) | 2.2V@15V,100A | 490ns | 40ns | 420nC | 33mJ | 10mJ | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APTGT35X120T3G | Microchip Tech | 208W 55A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17341172 | - | Bag-packed | 208W | -40℃~+150℃@(Tj) | 55A | 1.2kV | 2.5nF@25V | FS(Field Stop) | 2.1V@15V,35A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APTGL90DA120T1G | Microchip Tech | 385W 110A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17226861 | - | Bag-packed | 385W | -40℃~+175℃@(Tj) | 110A | 1.2kV | 4.4nF@25V | FS(Field Stop) | 2.25V@15V,75A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APTGT75DA120TG | Microchip Tech | 357W 110A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17227735 | - | Bag-packed | 357W | -40℃~+150℃@(Tj) | 110A | 1.2kV | 5.34nF@25V | FS(Field Stop) | 2.1V@15V,75A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APTGT100TDU60PG | Microchip Tech | 340W 150A 600V FS(Field Stop) IGBT Transistors / Modules ROHS | C17238951 | - | Bag-packed | 340W | -40℃~+175℃@(Tj) | 150A | 600V | 6.1nF@25V | FS(Field Stop) | 1.9V@15V,100A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXBT32N300 | Littelfuse/IXYS | TO-268AA IGBT Transistors / Modules ROHS | C19284276 | TO-268AA | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NCE30TD60BF | Wuxi NCE Power Semiconductor | 35.5W 60A 600V TO-220F-3 IGBT Transistors / Modules ROHS | C502942 | TO-220F-3 | Tube-packed | 35.5W | -55℃~+150℃@(Tj) | 60A | 600V | 3.552nF@25V | - | 5V@1mA | 166ns | 19ns | 132nC@30A,15V | 0.32mJ | 0.36mJ | 1.7V@30A,15V | 178ns | 1.7V@30A | ||
| | Min: 1 Mult: 1 | 0 | IXGT10N170 | Littelfuse/IXYS | 110W 20A 1.7kV NPT (non-penetrating type) TO-268AA IGBT Transistors / Modules ROHS | C17259598 | TO-268AA | Tube-packed | 110W | -55℃~+150℃@(Tj) | 20A | 1.7kV | - | NPT (non-penetrating type) | 4V@15V,10A | - | - | 32nC | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
| 0 | IKB30N65EH5 | Infineon Technologies | TO-263-3 IGBT Transistors / Modules ROHS | C536149 | TO-263-3 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
| 0 | SGB15N120 | Infineon Technologies | TO-263 IGBT Transistors / Modules ROHS | C539054 | TO-263 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |