IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5272
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5272
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Power Dissipation (Pd)
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
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Turn?off Delay Time (Td(off))
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Turn?on Delay Time (Td(on))
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Total Gate Charge (Qg@Ic,Vge)
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Turn?off Switching Loss (Eoff)
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Turn?on Switching Loss (Eon)
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Diode Reverse Recovery Time (Trr)
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|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Diode Reverse Recovery Time (Trr)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1 | 0  | FF600R12ME4EB11BOSA1 | Infineon Technologies | 4.05kW 995A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198680 | - | Tray | 4.05kW | -40℃~+150℃ | 995A | 1.2kV | 37nF@25V | FS(Field Stop) | 2.1V@15V,600A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS75R17KE3BOSA1 | Infineon Technologies | 465W 130A 1.7kV IGBT Transistors / Modules ROHS | C3198690 | - | Tray | 465W | -40℃~+125℃ | 130A | 1.7kV | 6.8nF@25V | - | 2.45V@15V,75A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM200GA120DLCHOSA1 | Infineon Technologies | 1.45kW 370A 1.2kV IGBT Transistors / Modules ROHS | C3198725 | - | Tray | 1.45kW | -40℃~+125℃ | 370A | 1.2kV | 13nF@25V | - | 2.6V@15V,200A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM35GB120DN2HOSA1 | Infineon Technologies | 280W 50A 1.2kV IGBT Transistors / Modules ROHS | C3198730 | - | Tray | 280W | - | 50A | 1.2kV | 2nF@25V | - | 3.2V@15V,35A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L200R07PE4BOSA1 | Infineon Technologies | 680W 200A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3198760 | - | Bag-packed | 680W | -40℃~+150℃ | 200A | 650V | 12.5nF@25V | FS(Field Stop) | 1.95V@15V,200A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS225R12OE4PBOSA1 | Infineon Technologies | 20mW 450A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198770 | - | Tray | 20mW | -40℃~+150℃ | 450A | 1.2kV | 13nF@25V | FS(Field Stop) | 2.15V@15V,225A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF300R17KE3HOSA1 | Infineon Technologies | 1.45kW 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198785 | - | Bag-packed | 1.45kW | -40℃~+125℃ | - | 1.7kV | 27nF@25V | FS(Field Stop) | 2.45V@15V,300A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF450R12KE4HOSA1 | Infineon Technologies | 2.4kW 520A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198790 | - | Bag-packed | 2.4kW | -40℃~+150℃@(Tj) | 520A | 1.2kV | 28nF@25V | FS(Field Stop) | 2.15V@15V,450A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS3L50R07W2H3FB11BPSA1 | Infineon Technologies | 20mW 50A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3198805 | - | Tray | 20mW | -40℃~+150℃@(Tj) | 50A | 650V | 3.1nF@25V | FS(Field Stop) | 1.8V@15V,50A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS75R12KE3BOSA1 | Infineon Technologies | 350W 105A 1.2kV NPT (non-penetrating type) IGBT Transistors / Modules ROHS | C3198865 | - | Bag-packed | 350W | - | 105A | 1.2kV | 5.3nF@25V | NPT (non-penetrating type) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APT40GF120JRD | Microchip Tech | 390W 60A 1.2kV SOT-227-4 IGBT Transistors / Modules ROHS | C3193022 | SOT-227-4 | Tube-packed | 390W | -55℃~+150℃@(Tj) | 60A | 1.2kV | 3.45nF@25V | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXGN100N170 | Littelfuse/IXYS | 735W 160A 1.7kV NPT (non-penetrating type) SOT-227B IGBT Transistors / Modules ROHS | C3193027 | SOT-227B | Tube-packed | 735W | -55℃~+150℃@(Tj) | 160A | 1.7kV | 9.22nF@25V | NPT (non-penetrating type) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXXN110N65B4H1 | Littelfuse/IXYS | 750W 215A 650V PT (Through Type) SOT-227B IGBT Transistors / Modules ROHS | C3193037 | SOT-227B | Tube-packed | 750W | -55℃~+175℃@(Tj) | 215A | 650V | 3.65nF@25V | PT (Through Type) | 2.1V@15V,110A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXYP60N65A5 | Littelfuse/IXYS | 395W 134A 650V PT (Through Type) TO-220 IGBT Transistors / Modules ROHS | C3193404 | TO-220 | Tube-packed | 395W | -55℃~+175℃@(Tj) | 134A | 650V | - | PT (Through Type) | 1.35V@15V,36A | 230ns | 28ns | 128nC | 1.45mJ | 0.6mJ | - | ||
| | Min: 1 Mult: 1 | 0 | SGP40N60UFTU | onsemi | 160W 40A 600V TO-220-3 IGBT Transistors / Modules ROHS | C3193414 | TO-220-3 | Tube-packed | 160W | -55℃~+150℃@(Tj) | 40A | 600V | - | - | 2.6V@15V,20A | 65ns | 15ns | 97nC | 0.2mJ | 0.16mJ | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP10N40E1 | HARRIS | 60W 10A 400V TO-220-3 IGBT Transistors / Modules ROHS | C3193424 | TO-220-3 | Bag-packed | 60W | -55℃~+150℃@(Tj) | 10A | 400V | - | - | 3.2V@20V,17.5A | - | - | 19nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC30FD1PBF | Infineon Technologies | 100W 31A 600V TO-220AB IGBT Transistors / Modules ROHS | C3193524 | TO-220AB | Bag-packed | 100W | -55℃~+150℃@(Tj) | 31A | 600V | - | - | 1.8V@15V,17A | 250ns | 22ns | 57nC | 1.42mJ | 0.37mJ | 46ns | ||
| | Min: 1 Mult: 1 | 0 | IRG4IBC20UDPBF | Infineon Technologies | 34W 11.4A 600V TO-220-3 IGBT Transistors / Modules ROHS | C3193554 | TO-220-3 | Bag-packed | 34W | -55℃~+150℃@(Tj) | 11.4A | 600V | - | - | 2.1V@15V,6.5A | 93ns | 39ns | 27nC | 0.13mJ | 0.16mJ | 37ns | ||
| | Min: 1 Mult: 1 | 0 | SGS13N60UFDTU | onsemi | 45W 13A 600V TO-220F-3 IGBT Transistors / Modules ROHS | C3193579 | TO-220F-3 | Tube-packed | 45W | -55℃~+150℃@(Tj) | 13A | 600V | - | - | 2.6V@15V,6.5A | 70ns | 20ns | 25nC | 0.095mJ | 0.085mJ | 55ns | ||
| | Min: 1 Mult: 1 | 0 | RJH60M1DPP-M0#T2 | RENESAS | 30W 16A 600V TO-220FL IGBT Transistors / Modules ROHS | C3193584 | TO-220FL | Tube-packed | 30W | - | 16A | 600V | - | - | 2.4V@15V,8A | 55ns | 30ns | 20.5nC | 0.09mJ | 0.08mJ | 75ns | ||
| | Min: 1 Mult: 1 | 0 | IGT6E21 | HARRIS | 32A 500V TO-247 IGBT Transistors / Modules ROHS | C3193604 | TO-247 | Bag-packed | - | - | 32A | 500V | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGH20N6S2 | onsemi | 125W 28A 600V TO-247 IGBT Transistors / Modules ROHS | C3193609 | TO-247 | Tube-packed | 125W | -55℃~+150℃@(Tj) | 28A | 600V | - | - | - | - | - | - | 0.058mJ | 0.025mJ | - | ||
| | Min: 1 Mult: 1 | 0 | IXYH120N65C3 | Littelfuse/IXYS | 1.36kW 260A 650V PT (Through Type) TO-247(IXYH) IGBT Transistors / Modules ROHS | C3193664 | TO-247(IXYH) | Tube-packed | 1.36kW | -55℃~+175℃@(Tj) | 260A | 650V | - | PT (Through Type) | 2.8V@15V,100A | 127ns | 28ns | 265nC | 0.5mJ | 1.25mJ | 29ns | ||
| | Min: 1 Mult: 1 | 0 | IXYH30N120B4 | Littelfuse/IXYS | 500W 100A 1.2kV PT (Through Type) TO-247(IXYH) IGBT Transistors / Modules ROHS | C3193669 | TO-247(IXYH) | Tube-packed | 500W | -55℃~+175℃@(Tj) | 100A | 1.2kV | - | PT (Through Type) | 2.1V@15V,25A | 245ns | 20ns | 58nC | 2.6mJ | 4.4mJ | 60ns | ||
| | Min: 1 Mult: 1 | 0 | APT50GS60BRDQ2G | Microchip Tech | 415W 93A 600V NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS | C3193674 | TO-247-3 | Tube-packed | 415W | -55℃~+150℃@(Tj) | 93A | 600V | - | NPT (non-penetrating type) | 3.15V@15V,50A | 225ns | 16ns | 235nC | 0.755mJ | - | 25ns |