IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5272
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5272
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Power Dissipation (Pd)
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
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Turn?off Delay Time (Td(off))
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Turn?on Delay Time (Td(on))
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Turn?on Switching Loss (Eon)
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Total Gate Charge (Qg@Ic,Vge)
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Turn?off Switching Loss (Eoff)
|
Diode Reverse Recovery Time (Trr)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Turn?on Switching Loss (Eon)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
|
Diode Reverse Recovery Time (Trr)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1 | 0  | FP15R12W1T7BOMA1 | Infineon Technologies | 20mW 15A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190224 | - | Tray | 20mW | -40℃~+175℃@(Tj) | 15A | 1.2kV | 2.82nF@25V | FS(Field Stop) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP10R12W1T7B11BOMA1 | Infineon Technologies | 20mW 10A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190229 | - | Tray | 20mW | -40℃~+75℃@(Tj) | 10A | 1.2kV | 1.89nF@25V | FS(Field Stop) | 1.6V@15V,10A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM25GP120BPSA1 | Infineon Technologies | 230W 45A 1.2kV IGBT Transistors / Modules ROHS | C3190264 | - | Tray | 230W | - | 45A | 1.2kV | 1.5nF@25V | - | 2.55V@15V,25A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | DDB6U180N16RRPB11BPSA1 | Infineon Technologies | 515W 140A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190269 | - | Tray | 515W | -40℃~+150℃@(Tj) | 140A | 1.2kV | 6.3nF@25V | FS(Field Stop) | 2.2V@15V,100A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP25R12KS4CBPSA1 | Infineon Technologies | 230W 40A 1.2kV IGBT Transistors / Modules ROHS | C3190279 | - | Tray | 230W | -40℃~+125℃@(Tj) | 40A | 1.2kV | 1.5nF@25V | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP25R12KT4B11BPSA1 | Infineon Technologies | 160W 25A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190309 | - | Tray | 160W | -40℃~+150℃@(Tj) | 25A | 1.2kV | 1.45nF@25V | FS(Field Stop) | 2.15V@15V,25A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS50R12KT4B11BPSA1 | Infineon Technologies | 280W 50A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190314 | - | Tray | 280W | -40℃~+150℃@(Tj) | 50A | 1.2kV | 2.8nF@25V | FS(Field Stop) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS35R12KT3BPSA1 | Infineon Technologies | 210W 55A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190319 | - | Tray | 210W | -40℃~+125℃@(Tj) | 55A | 1.2kV | 2.5nF@25V | FS(Field Stop) | 2.15V@15V,35A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP35R12KT4B15BPSA1 | Infineon Technologies | 210W 35A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190329 | - | Tray | 210W | -40℃~+150℃@(Tj) | 35A | 1.2kV | 2nF@25V | FS(Field Stop) | 2.15V@15V,35A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF450R17ME4B11BPSA1 | Infineon Technologies | 2.5kW 600A 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190339 | - | Tray | 2.5kW | -40℃~+150℃@(Tj) | 600A | 1.7kV | 36nF@25V | FS(Field Stop) | 2.3V@15V,450A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF600R12ME7B11BPSA1 | Infineon Technologies | 20mW 600A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190344 | - | Tray | 20mW | -40℃~+175℃@(Tj) | 600A | 1.2kV | 92nF@25V | FS(Field Stop) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F4250R17MP4B11BPSA2 | Infineon Technologies | 370A 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190359 | - | Tray | - | -40℃~+150℃@(Tj) | 370A | 1.7kV | 21nF@25V | FS(Field Stop) | 2.3V@15V,250A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FD1000R33HE3KB60BPSA1 | Infineon Technologies | 1600kW 1kA 3.3kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190389 | - | Tray | 1600kW | -40℃~+150℃@(Tj) | 1kA | 3.3kV | 190nF@25V | FS(Field Stop) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NGB8206ANT4G | onsemi | 150W 20A 390V D2PAK IGBT Transistors / Modules ROHS | C3190504 | D2PAK | Bag-packed | 150W | -55℃~+175℃@(Tj) | 20A | 390V | - | - | 1.9V@4.5V,20A | 5us | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS8B60KPBF | Infineon Technologies | 167W 28A 600V NPT (non-penetrating type) D2PAK IGBT Transistors / Modules ROHS | C3190514 | D2PAK | Bag-packed | 167W | - | 28A | 600V | - | NPT (non-penetrating type) | 2.2V@15V,8A | 140ns | 23ns | 0.16mJ | 29nC | 0.16mJ | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
| 0 | STGB19NC60KT4 | STMicroelectronics | 125W 35A 600V D2PAK IGBT Transistors / Modules ROHS | C3190524 | D2PAK | Tape & Reel (TR) | 125W | -55℃~+150℃@(Tj) | 35A | 600V | - | - | 2.75V@15V,12A | 105ns | 30ns | 0.165mJ | 55nC | 0.255mJ | - | ||
| | Min: 1 Mult: 1 | 0 | AUIRGS4062D1TRL | Infineon Technologies | 246W 59A 600V D2PAK IGBT Transistors / Modules ROHS | C3190529 | D2PAK | Bag-packed | 246W | -55℃~+175℃@(Tj) | 59A | 600V | - | - | - | - | - | 0.532mJ | - | 0.311mJ | 102ns | ||
| | Min: 1 Mult: 1
Full Reel: 2000
| 0 | IRG4RC10KDTRPBF | Infineon Technologies | 38W 9A 600V DPAK IGBT Transistors / Modules ROHS | C3190804 | DPAK | Tape & Reel (TR) | 38W | -55℃~+150℃@(Tj) | 9A | 600V | - | - | - | - | - | 0.25mJ | - | 0.14mJ | 28ns | ||
| | Min: 1 Mult: 1
Full Reel: 3000
| 0 | IRG4RC10UDTRRP | Infineon Technologies | 38W 8.5A 600V DPAK IGBT Transistors / Modules ROHS | C3190814 | DPAK | Tape & Reel (TR) | 38W | - | 8.5A | 600V | - | - | 2.6V@15V,5A | 87ns | 40ns | 0.14mJ | 15nC | 0.12mJ | 28ns | ||
| | Min: 1 Mult: 1 | 0 | HGT1S20N36G3VL | onsemi | 150W 37.7A 395V I2PAK(TO-262) IGBT Transistors / Modules ROHS | C3191164 | I2PAK(TO-262) | Tube-packed | 150W | -40℃~+175℃@(Tj) | 37.7A | 395V | - | - | 1.9V@5V,20A | 15us | - | - | 28.7nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTD3N60B3 | HARRIS | 33.3W 7A 600V IPAK IGBT Transistors / Modules ROHS | C3191174 | IPAK | Bag-packed | 33.3W | -55℃~+150℃@(Tj) | 7A | 600V | - | - | 2.1V@15V,3.5A | 105ns | 18ns | 0.066mJ | 21nC | 0.088mJ | 16ns | ||
| | Min: 1 Mult: 1 | 0 | APT40GP60J | Microchip Tech | 284W 86A 600V PT (Through Type) IGBT Transistors / Modules ROHS | C3191199 | - | Tube-packed | 284W | - | 86A | 600V | 4.61nF@25V | PT (Through Type) | 2.7V@15V,40A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGIB4630DPBF | Infineon Technologies | 206W 47A 600V NPT (non-penetrating type) TO-220 IGBT Transistors / Modules ROHS | C3191614 | TO-220 | Tube-packed | 206W | -40℃~+175℃@(Tj) | 47A | 600V | - | NPT (non-penetrating type) | 1.95V@15V,18A | 105ns | 40ns | 0.095mJ | 35nC | 0.35mJ | 100ns | ||
| | Min: 1 Mult: 1 | 0 | IGP20N65F5XKSA1 | Infineon Technologies | 125W 42A 650V TO-220-3 IGBT Transistors / Modules ROHS | C3191619 | TO-220-3 | Tube-packed | 125W | -40℃~+175℃@(Tj) | 42A | 650V | - | - | 2.1V@15V,20A | 165ns | 20ns | 0.16mJ | 48nC | 0.06mJ | - | ||
| | Min: 1 Mult: 1 | 0 | IGP50N60TXKSA1 | Infineon Technologies | 333W 100A 600V FS(Field Stop) TO-220-3 IGBT Transistors / Modules ROHS | C3191624 | TO-220-3 | Tube-packed | 333W | -40℃~+175℃@(Tj) | 100A | 600V | - | FS(Field Stop) | 2V@15V,50A | 299ns | 26ns | 2.6mJ | 310nC | 2.6mJ | - |