IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5096
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5096
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
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Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
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Turn?on Switching Loss (Eon)
|
Diode Reverse Recovery Time (Trr)
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|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Diode Reverse Recovery Time (Trr)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1 | 0 | APT35GN120SG | Microchip Tech | 379W 94A 1.2kV D3PAK IGBT Transistors / Modules ROHS | C3190554 | D3PAK | Tube-packed | 300ns | 379W | 24ns | -55℃~+150℃@(Tj) | 94A | 1.2kV | - | NPT (non-penetrating type);FS(Field Stop) | 2.1V@15V,35A | 220nC | 2.315mJ | - | - | ||
| | Min: 1 Mult: 1 | 0  | HGT1S7N60C3D | onsemi | 60W 14A 600V I2PAK(TO-262) IGBT Transistors / Modules ROHS | C3191161 | I2PAK(TO-262) | Bag-packed | - | 60W | - | -40℃~+150℃@(Tj) | 14A | 600V | - | - | 2V@15V,7A | 38nC | - | - | 25ns | ||
| | Min: 1 Mult: 1 | 0 | HGTD7N60B3 | HARRIS | 60W 14A 600V IPAK IGBT Transistors / Modules ROHS | C3191171 | IPAK | Bag-packed | 130ns | 60W | 26ns | -55℃~+150℃@(Tj) | 14A | 600V | - | - | 2.1V@15V,7A | 30nC | 0.12mJ | 0.16mJ | - | ||
| | Min: 1 Mult: 1 | 0 | HGTD8P50G1 | HARRIS | 66W 12A 500V IPAK IGBT Transistors / Modules ROHS | C3191173 | IPAK | Bag-packed | - | 66W | - | -40℃~+150℃@(Tj) | 12A | 500V | - | - | 3.7V@15V,8A | 30nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXBF20N300 | Littelfuse/IXYS | 150W 34A 3kV IGBT Transistors / Modules ROHS | C3191180 | - | Tube-packed | - | 150W | - | -55℃~+150℃@(Tj) | 34A | 3kV | - | - | 3.2V@15V,20A | 105nC | - | - | 1.35us | ||
| | Min: 1 Mult: 1 | 0 | IXYF30N450 | Littelfuse/IXYS | 230W 23A 4.5kV IGBT Transistors / Modules ROHS | C3191183 | - | Tube-packed | 168ns | 230W | 38ns | -55℃~+150℃@(Tj) | 23A | 4.5kV | - | - | 3.9V@15V,30A | 88nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APT47GA60JD40 | Microchip Tech | 283W 87A 600V SOT-227-4 IGBT Transistors / Modules ROHS | C3191196 | SOT-227-4 | Tube-packed | - | 283W | - | -55℃~+150℃@(Tj) | 87A | 600V | 6.32nF@25V | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APT80GP60JDQ3 | Microchip Tech | 462W 151A 600V PT (Through Type) IGBT Transistors / Modules ROHS | C3191200 | - | Tube-packed | - | 462W | - | - | 151A | 600V | 9.84nF@25V | PT (Through Type) | 2.7V@15V,80A | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
| 0 | RJH60M1DPE-00#J3 | RENESAS | 52W 16A 600V SC-83 IGBT Transistors / Modules ROHS | C3191206 | SC-83 | Tape & Reel (TR) | 55ns | 52W | 30ns | - | 16A | 600V | - | - | 2.4V@15V,8A | 20.5nC | 0.09mJ | 0.08mJ | 100ns | ||
| | Min: 1 Mult: 1 | 0 | APT85GR120J | Microchip Tech | 543W 116A 1.2kV NPT (non-penetrating type) SOT-227 IGBT Transistors / Modules ROHS | C3193017 | SOT-227 | Tube-packed | - | 543W | - | -55℃~+150℃@(Tj) | 116A | 1.2kV | 8.4nF@25V | NPT (non-penetrating type) | 3.2V@15V,85A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APT60GF120JRD | Microchip Tech | 521W 115A 1.2kV NPT (non-penetrating type) SOT-227-4 IGBT Transistors / Modules ROHS | C3193020 | SOT-227-4 | Tube-packed | - | 521W | - | -55℃~+150℃@(Tj) | 115A | 1.2kV | 7.08nF@25V | NPT (non-penetrating type) | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXYN140N120A4 | Littelfuse/IXYS | 1.07kW 380A 1.2kV PT (Through Type) SOT-227B IGBT Transistors / Modules ROHS | C3193041 | SOT-227B | Tube-packed | - | 1.07kW | - | -55℃~+175℃@(Tj) | 380A | 1.2kV | 8.3nF@25V | PT (Through Type) | 1.7V@15V,140A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXBH42N170A | Littelfuse/IXYS | TO-247AD IGBT Transistors / Modules ROHS | C3193801 | TO-247AD | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG7PH35UD1MPBF | Infineon Technologies | 179W 50A 1.2kV TO-247AD IGBT Transistors / Modules ROHS | C3193811 | TO-247AD | Bag-packed | 160ns | 179W | - | -55℃~+150℃@(Tj) | 50A | 1.2kV | - | - | 2.2V@15V,20A | 130nC | 0.62mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG7PH42U-EP | Infineon Technologies | 385W 90A 1.2kV TO-247AD IGBT Transistors / Modules ROHS | C3193812 | TO-247AD | Bag-packed | 229ns | 385W | 25ns | -55℃~+175℃@(Tj) | 90A | 1.2kV | - | - | 2V@15V,30A | 157nC | 1.18mJ | 2.11mJ | 153ns | ||
| | Min: 1 Mult: 1 | 0 | IRGSL4640DPBF | Infineon Technologies | 250W 65A 600V TO-262 IGBT Transistors / Modules ROHS | C3193975 | TO-262 | Bag-packed | 104ns | 250W | 41ns | -55℃~+175℃@(Tj) | 65A | 600V | - | - | 1.9V@15V,24A | 75nC | 0.6mJ | 0.115mJ | 89ns | ||
| | Min: 1 Mult: 1 | 0 | AFGY100T65SPD | onsemi | 660W 120A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS | C2902242 | TO-247-3 | Tube-packed | 78ns | 660W | 36ns | -55℃~+175℃@(Tj) | 120A | 650V | - | FS(Field Stop) | 2.05V@15V,100A | 109nC | 2.7mJ | 5.1mJ | 105ns | ||
| | Min: 1 Mult: 1 | 0 | HGT1S20N36G3VLS | onsemi | 150W 37.7A 415V TO-263AB IGBT Transistors / Modules ROHS | C3194020 | TO-263AB | Bag-packed | 15us | 150W | - | -40℃~+175℃@(Tj) | 37.7A | 415V | - | - | 1.9V@5V,20A | 28.7nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGT1S12N60C3DS | onsemi | 104W 24A 600V TO-263AB IGBT Transistors / Modules ROHS | C3194024 | TO-263AB | Bag-packed | - | 104W | - | -40℃~+150℃@(Tj) | 24A | 600V | - | - | 2.2V@15V,15A | 71nC | - | - | 32ns | ||
| | Min: 1 Mult: 1 | 0 | SFM200CC4A2D | Hangzhou Silan Microelectronics | IGBT Transistors / Modules ROHS | C2897638 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGM100HF12A1TFDT4 | Hangzhou Silan Microelectronics | IGBT Transistors / Modules ROHS | C2897643 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM75GAL120DN2HOSA1 | Infineon Technologies | 625W 105A 1.2kV IGBT Transistors / Modules ROHS | C3198622 | - | Tray | - | 625W | - | - | 105A | 1.2kV | 5.5nF@25V | - | 3V@15V,75A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM300GA120DLCHOSA1 | Infineon Technologies | 2.25kW 570A 1.2kV IGBT Transistors / Modules ROHS | C3198634 | - | Tray | - | 2.25kW | - | -40℃~+125℃ | 570A | 1.2kV | 22nF@25V | - | 2.6V@15V,300A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP10R12W1T4PBPSA1 | Infineon Technologies | 20mW 20A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198638 | - | Tray | - | 20mW | - | -40℃~+150℃ | 20A | 1.2kV | 600pF@25V | FS(Field Stop) | 2.25V@15V,10A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM15GD120DLCE3224BOSA1 | Infineon Technologies | 145W 35A 1.2kV IGBT Transistors / Modules ROHS | C3198644 | - | Tray | - | 145W | - | -40℃~+125℃ | 35A | 1.2kV | 1nF@25V | - | - | - | - | - | - |