IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
4548
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
4548
Images
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Pricing
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Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
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LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Forward Voltage (Vf@If)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Forward Voltage (Vf@If)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1 | 0  | IGZ50N65H5 | Infineon Technologies | TO-247-4 IGBT Transistors / Modules ROHS | C536114 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IHW30N110R3 | Infineon Technologies | TO-247-3 IGBT Transistors / Modules ROHS | C536122 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 2500
| 0 | IKD04N60RA | Infineon Technologies | TO-252-3 IGBT Transistors / Modules ROHS | C536166 | TO-252-3 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKFW50N60DH3 | Infineon Technologies | TO-247-3-AI IGBT Transistors / Modules ROHS | C536177 | TO-247-3-AI | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKQ120N60TA | Infineon Technologies | TO-247-3 IGBT Transistors / Modules ROHS | C536203 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKQ40N120CH3 | Infineon Technologies | TO-247-3 IGBT Transistors / Modules ROHS | C536204 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKW40N60DTP | Infineon Technologies | TO-247-3 IGBT Transistors / Modules ROHS | C536216 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKY50N120CH3 | Infineon Technologies | TO-247-4 IGBT Transistors / Modules ROHS | C536224 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKZ75N65EH5 | Infineon Technologies | TO-247-4 IGBT Transistors / Modules ROHS | C536229 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGAF40S65AQ | onsemi | 94W 80A 650V FS(Field Stop) TO-3PF-3 IGBT Transistors / Modules ROHS | C605137 | TO-3PF-3 | Tube-packed | 81.6ns | 94W | 17.8ns | -55℃~+175℃@(Tj) | 80A | 650V | - | FS(Field Stop) | 2.1V@15V,40A | 75nC | 274ns | 0.062mJ | 0.132mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG100P12E2 | Yangzhou Yangjie Elec Tech | E2 IGBT Transistors / Modules ROHS | C781182 | E2 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG100UZ12MRGJ | Yangzhou Yangjie Elec Tech | IGBT Transistors / Modules ROHS | C781183 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG200HF12MRC2 | Yangzhou Yangjie Elec Tech | 1.15kW 300A 1.2kV IGBT module IGBT Transistors / Modules ROHS | C781191 | - | Box-packed | 490ns | 1.15kW | 135ns | -40℃~+150℃@(Tj) | 300A | 1.2kV | 12.5nF@25V | IGBT module | 6V@6mA | - | 230ns | 13.6mJ | 17mJ | 2V@150A,15V | 2V@150A | ||
| | Min: 1 Mult: 1 | 0 | MG400HF12MRC2 | Yangzhou Yangjie Elec Tech | IGBT Transistors / Modules ROHS | C781195 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG75HF12MIC1 | Yangzhou Yangjie Elec Tech | IGBT Transistors / Modules ROHS | C781196 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MG75P12E2 | Yangzhou Yangjie Elec Tech | E2 IGBT Transistors / Modules ROHS | C781198 | E2 | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGH60T65SHD-F155 | onsemi | 349W 120A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS | C380798 | TO-247-3 | Tube-packed | 87ns | 349W | 26ns | -55℃~+175℃@(Tj) | 120A | 650V | - | FS(Field Stop) | 2.1V@15V,60A | 102nC | 34.6ns | 0.63mJ | 1.69mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGA60N60UFDTU | onsemi | 298W 120A 600V FS(Field Stop) TO-3P-3 IGBT Transistors / Modules ROHS | C475765 | TO-3P-3 | Tube-packed | 130ns | 298W | 23ns | - | 120A | 600V | - | FS(Field Stop) | 2.4V@15V,60A | 188nC | 47ns | - | 1.81mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | SPT10N120T1T8TL | SPS | TO-247-3 IGBT Transistors / Modules ROHS | C462242 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXGH28N60B3D1 | Littelfuse/IXYS | 190W 66A 600V PT (Through Type) TO-247-3 IGBT Transistors / Modules ROHS | C499438 | TO-247-3 | Tube-packed | 125ns | 190W | 19ns | -55℃~+150℃@(Tj) | 66A | 600V | - | PT (Through Type) | 1.8V@15V,24A | 62nC | 25ns | 0.65mJ | 0.34mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF150R12MS4G | Infineon Technologies | IGBT Transistors / Modules ROHS | C540935 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP10R06KL4 | Infineon Technologies | IGBT Transistors / Modules ROHS | C541158 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | DDB6U30N08VR | Infineon Technologies | IGBT Transistors / Modules ROHS | C535071 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NGTB35N65FL2WG | onsemi | 300W 70A 650V FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS | C184683 | TO-247 | Tube-packed | 132ns | 300W | 72ns | -55℃~+175℃@(Tj) | 70A | 650V | - | FS(Field Stop) | 2V@15V,35A | 125nC | 68ns | 0.28mJ | 0.84mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | AIKP20N60CT | Infineon Technologies | TO-220-3 IGBT Transistors / Modules ROHS | C533171 | TO-220-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |