IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
4548
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
4548
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Power Dissipation (Pd)
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Switching Loss (Eoff)
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Turn?on Switching Loss (Eon)
|
Total Gate Charge (Qg@Ic,Vge)
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Turn?off Delay Time (Td(off))
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Turn?on Delay Time (Td(on))
|
Diode Reverse Recovery Time (Trr)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Diode Reverse Recovery Time (Trr)
|
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| | Min: 1 Mult: 1 | 0 | FD800R17KF6CB2NOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171139 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM150GD60DLCBOSA1 | Infineon Technologies | 570W 180A 600V IGBT Transistors / Modules ROHS | C3171144 | - | Tray | 570W | - | 180A | 600V | 6.5nF@25V | - | 2.45V@15V,150A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0  | FZ3600R17KE3B2NOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171199 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP30Y2ADPP-M9#T2F | RENESAS | IGBT Transistors / Modules ROHS | C3171284 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | TMOSP7052 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171339 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP3045DPP-B1#T2F | RENESAS | IGBT Transistors / Modules ROHS | C3171354 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJH30H2DPK-M2#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171419 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BUP403 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171434 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP35R12N2T7BPSA1 | Infineon Technologies | 20mW 35A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190280 | - | Tray | 20mW | -40℃~+175℃@(Tj) | 35A | 1.2kV | 6.62nF@25V | FS(Field Stop) | 1.6V@15V,35A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS30B60KTRRP | Infineon Technologies | 370W 78A 600V NPT (non-penetrating type) D2PAK IGBT Transistors / Modules ROHS | C3190500 | D2PAK | Bag-packed | 370W | -55℃~+175℃@(Tj) | 78A | 600V | - | NPT (non-penetrating type) | - | 0.825mJ | 0.35mJ | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS150R12N2T7BPSA1 | Infineon Technologies | 20mW 150A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190254 | - | Tray | 20mW | -40℃~+175℃@(Tj) | 150A | 1.2kV | 30.1nF@25V | FS(Field Stop) | 1.8V@15V,150A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG1G400US60L | onsemi | 1.136kW 400A 600V IGBT Transistors / Modules ROHS | C3171335 | - | Bag-packed | 1.136kW | -40℃~+150℃@(Tj) | 400A | 600V | - | - | 2.7V@15V,400A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP30E3DPP-M0#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171420 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FD1400R12IP4DBOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3276644 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IGTH20N40D | HARRIS | 20A 400V TO-218 IGBT Transistors / Modules ROHS | C3193374 | TO-218 | Bag-packed | - | - | 20A | 400V | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP10N40F1D | HARRIS | 75W 12A 400V TO-220 IGBT Transistors / Modules ROHS | C3193394 | TO-220 | Bag-packed | 75W | -55℃~+150℃@(Tj) | 12A | 400V | - | - | 2.5V@10V,5A | - | - | 13.4nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGH50N6S2 | onsemi | 463W 75A 600V TO-247 IGBT Transistors / Modules ROHS | C3193594 | TO-247 | Tube-packed | 463W | -55℃~+150℃@(Tj) | 75A | 600V | - | - | 2.7V@15V,30A | 0.25mJ | 0.26mJ | 70nC | 55ns | 13ns | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG27N60C3R | HARRIS | 208W 54A 600V TO-247 IGBT Transistors / Modules ROHS | C3193619 | TO-247 | Bag-packed | 208W | -40℃~+150℃@(Tj) | 54A | 600V | - | - | 2.2V@15V,27A | - | - | 212nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG24N60D1 | HARRIS | 125W 40A 600V TO-247 IGBT Transistors / Modules ROHS | C3193629 | TO-247 | Bag-packed | 125W | -55℃~+150℃@(Tj) | 40A | 600V | - | - | 2.3V@15V,24A | - | - | 155nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGP6630DPBF | Infineon Technologies | 192W 47A 600V TO-247AC IGBT Transistors / Modules ROHS | C3193754 | TO-247AC | Bag-packed | 192W | -40℃~+175℃@(Tj) | 47A | 600V | - | - | - | 0.35mJ | 0.075mJ | - | - | - | 70ns | ||
| | Min: 1 Mult: 1 | 0 | IRGP4266D-EPBF | Infineon Technologies | 455W 140A 650V TO-247AD IGBT Transistors / Modules ROHS | C3193799 | TO-247AD | Tube-packed | 455W | -40℃~+175℃@(Tj) | 140A | 650V | - | - | 2.1V@15V,75A | 2.2mJ | 2.5mJ | 210nC | 200ns | 50ns | 170ns | ||
| | Min: 1 Mult: 1 | 0 | AUIRGSL4062D1 | Infineon Technologies | 246W 59A 600V TO-262 IGBT Transistors / Modules ROHS | C3193979 | TO-262 | Bag-packed | 246W | -55℃~+175℃@(Tj) | 59A | 600V | - | - | - | 0.311mJ | 0.532mJ | - | - | - | 102ns | ||
| | Min: 1 Mult: 1 | 0 | FGA20S125P | onsemi | 250W 40A 1.25kV FS(Field Stop) TO-3PN IGBT Transistors / Modules ROHS | C3194129 | TO-3PN | Tube-packed | 250W | - | 40A | 1.25kV | - | FS(Field Stop) | 2.5V@15V,20A | - | - | 129nC | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM75GB120DLCHOSA1 | Infineon Technologies | 690W 170A 1.2kV IGBT Transistors / Modules ROHS | C3198620 | - | Tray | 690W | - | 170A | 1.2kV | 5.1nF@25V | - | 2.6V@15V,75A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTA32N60E2 | HARRIS | 208W 50A 600V TO-218-5 IGBT Transistors / Modules ROHS | C3193375 | TO-218-5 | Bag-packed | 208W | -55℃~+150℃@(Tj) | 50A | 600V | - | - | 2.9V@15V,32A | - | - | 265nC | - | - | - |