IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5274
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Input Capacitance (Ciss@Vds)
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Drain Source On Resistance (RDS(on)@Vgs,Id)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Continuous Drain Current (Id)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Gate Threshold Voltage (Vgs(th)@Id)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5274
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Min: 1 Mult: 1 | 0 | APTGT600U170D4G | Microchip Tech | 2.9kW 1.1kA 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17517911 | - | Bag-packed | 2.9kW | -40℃~+150℃@(Tj) | 1.1kA | 1.7kV | 51nF@25V | FS(Field Stop) | 2.4V@15V,600A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF600R12IE4BOSA1 | Infineon Technologies | 3.35kW 600A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17555899 | - | Tray | 3.35kW | -40℃~+150℃@(Tj) | 600A | 1.2kV | 37nF@25V | FS(Field Stop) | 2.05V@15V,600A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | APTCV60TLM45T3G | Microchip Tech | 250W 100A 600V FS(Field Stop) IGBT Transistors / Modules ROHS | C17508740 | - | Bag-packed | 250W | -40℃~+175℃@(Tj) | 100A | 600V | 4.62nF@25V | FS(Field Stop) | 1.9V@15V,75A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IXA30PG1200DHG-TUB | Littelfuse/IXYS | 150W 43A 1.2kV PT (Through Type) SMD-9P IGBT Transistors / Modules ROHS | C17556164 | SMD-9P | Bag-packed | 150W | -55℃~+150℃@(Tj) | 43A | 1.2kV | - | PT (Through Type) | 2.2V@15V,25A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0  | FMM7G30US60N | onsemi | 104W 30A 600V IGBT Transistors / Modules ROHS | C17642213 | - | Bag-packed | 104W | -40℃~+150℃@(Tj) | 30A | 600V | 2.1nF@30V | - | 2.7V@15V,30A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | RGW80TK65EGVC11 | ROHM Semicon | 81W 39A 650V FS(Field Stop) SC-93-3 IGBT Transistors / Modules ROHS | C17565621 | SC-93-3 | Tube-packed | 81W | -40℃~+175℃@(Tj) | 39A | 650V | - | FS(Field Stop) | 1.9V@15V,40A | 143ns | 44ns | 110nC | 102ns | - | - | |||
Min: 1 Mult: 1 | 0 | APTGT400U120D4G | Microchip Tech | 2.25kW 600A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17536715 | - | Bag-packed | 2.25kW | -40℃~+150℃@(Tj) | 600A | 1.2kV | 28nF@25V | FS(Field Stop) | 2.1V@15V,400A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | APTGT400U170D4G | Microchip Tech | 2.08kW 800A 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17622193 | - | Bag-packed | 2.08kW | - | 800A | 1.7kV | 33nF@25V | FS(Field Stop) | 2.4V@15V,400A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | F4150R17N3P4B58BPSA1 | Infineon Technologies | 20mW 150A 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17564462 | - | Tray | 20mW | -40℃~+150℃@(Tj) | 150A | 1.7kV | 12.3nF@25V | FS(Field Stop) | 2.2V@15V,150A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IXYP15N65C3D1 | Littelfuse/IXYS | 200W 38A 650V PT (Through Type) TO-220-3 IGBT Transistors / Modules ROHS | C17554579 | TO-220-3 | Tube-packed | 200W | -55℃~+175℃@(Tj) | 38A | 650V | - | PT (Through Type) | 2.5V@15V,15A | 68ns | 15ns | 19nC | 110ns | - | - | |||
Min: 1 Mult: 1 | 0 | APT64GA90B | Microchip Tech | 500W 117A 900V PT (Through Type) TO-247 IGBT Transistors / Modules ROHS | C17593561 | TO-247 | Tube-packed | 500W | -55℃~+150℃@(Tj) | 117A | 900V | - | PT (Through Type) | 3.1V@15V,38A | 131ns | 18ns | 162nC | - | - | - | |||
Min: 1 Mult: 1 | 0 | FS3L50R07W2H3B11BPSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C17498800 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IXYH16N170CV1 | Littelfuse/IXYS | 310W 40A 1.7kV TO-247 IGBT Transistors / Modules ROHS | C17564430 | TO-247 | Tube-packed | 310W | -55℃~+175℃@(Tj) | 40A | 1.7kV | - | - | 3.8V@15V,16A | 140ns | 11ns | 56nC | 150ns | 1.5mJ | 2.1mJ | |||
Min: 1 Mult: 1 | 0 | HGTH12N50C1D | HARRIS | 75W 12A 500V TO-218 IGBT Transistors / Modules ROHS | C17621790 | TO-218 | Bag-packed | 75W | -55℃~+150℃@(Tj) | 12A | 500V | - | - | 3.2V@20V,17.5A | - | - | 19nC | 100ns | - | - | |||
Min: 1 Mult: 1 | 0 | VS-ETF150Y65N | Vishay Intertech | 600W 201A 650V NPT (non-penetrating type) IGBT Transistors / Modules ROHS | C17554789 | - | Box-packed | 600W | - | 201A | 650V | - | NPT (non-penetrating type) | 2.17V@15V,150A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FS100R17N3E4B11BOSA1 | Infineon Technologies | 600W 100A 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C17584173 | - | Tray | 600W | -40℃~+150℃ | 100A | 1.7kV | 9nF@25V | FS(Field Stop) | 2.3V@15V,100A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | F43L50R07W2H3FB11BPSA2 | Infineon Technologies | 20mW 50A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C17535583 | - | Tray | 20mW | -40℃~+150℃@(Tj) | 50A | 650V | 3.1nF@25V | FS(Field Stop) | 1.8V@15V,50A | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | STGW50HF60S | STMicroelectronics | 284W 110A 600V TO-247-3 IGBT Transistors / Modules ROHS | C17499021 | TO-247-3 | Tube-packed | 284W | -55℃~+150℃@(Tj) | 110A | 600V | - | - | 1.45V@15V,30A | 220ns | 50ns | 200nC | - | 4.2mJ | - | |||
Min: 1 Mult: 1 | 0 | GT20N135SRA,S1E | TOSHIBA | 312W 40A 1.35kV TO-247 IGBT Transistors / Modules ROHS | C17622325 | TO-247 | Tube-packed | 312W | - | 40A | 1.35kV | - | - | 2.4V@15V,40A | - | - | 185nC | - | - | - | |||
Min: 1 Mult: 1 | 0 | DGW15N120CTL | Yangzhou Yangjie Elec Tech | TO-247 IGBT Transistors / Modules ROHS | C20167789 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | DGW25N120CTL | Yangzhou Yangjie Elec Tech | TO-247 IGBT Transistors / Modules ROHS | C20167790 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | DGW50N65CTL1 | Yangzhou Yangjie Elec Tech | TO-247AB IGBT Transistors / Modules ROHS | C20167793 | TO-247AB | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | WG50N65DHJQ | WeEn Semiconductors | TO-247-3 IGBT Transistors / Modules ROHS | C20141044 | TO-247-3 | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | NXH300B100H4Q2F2SG-R | onsemi | IGBT Transistors / Modules ROHS | C20047253 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | BSM300GB120DLCE3256HOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C20189656 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - |