IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5097
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5097
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Power Dissipation (Pd)
|
Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
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| | Min: 1 Mult: 1 | 0  | RJH30E2DPP-Z0#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171157 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM15GD120DLCE3224BPSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171164 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP75R07N2E4B16BOSA1 | Infineon Technologies | 20mW 95A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3190283 | - | Tray | 20mW | - | 95A | 650V | 4.6nF@25V | FS(Field Stop) | 1.95V@15V,75A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM25GD120DN2E3224BPSA1 | Infineon Technologies | 200W 35A 1.2kV IGBT Transistors / Modules ROHS | C3190308 | - | Tray | 200W | - | 35A | 1.2kV | 1.65nF@25V | - | 3V@15V,25A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS75R07N2E4B11BPSA1 | Infineon Technologies | 250W 75A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3190317 | - | Tray | 250W | -40℃~+150℃@(Tj) | 75A | 650V | 4.6nF@25V | FS(Field Stop) | 1.95V@15V,75A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS25R12KE3GBPSA1 | Infineon Technologies | 145W 40A 1.2kV IGBT Transistors / Modules ROHS | C3190320 | - | Tray | 145W | -40℃~+125℃@(Tj) | 40A | 1.2kV | 1.8nF@25V | - | 2.15V@15V,25A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1000R33HE3B60BPSA1 | Infineon Technologies | 1600kW 1kA 3.3kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190378 | - | Tray | 1600kW | -40℃~+150℃@(Tj) | 1kA | 3.3kV | 190nF@25V | FS(Field Stop) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1000R33HL3B60BOSA1 | Infineon Technologies | 1600kW 1kA 3.3kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190379 | - | Tray | 1600kW | -40℃~+150℃@(Tj) | 1kA | 3.3kV | 190nF@25V | FS(Field Stop) | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS15B60KDTRRP | Infineon Technologies | 208W 31A 600V NPT (non-penetrating type) D2PAK IGBT Transistors / Modules ROHS | C3190518 | D2PAK | Bag-packed | 208W | -55℃~+150℃@(Tj) | 31A | 600V | - | NPT (non-penetrating type) | 2.2V@15V,15A | 184ns | 34ns | 56nC | 92ns | 0.34mJ | 0.22mJ | ||
| | Min: 1 Mult: 1 | 0 | APT80GA90S | Microchip Tech | 625W 145A 900V PT (Through Type) D3PAK IGBT Transistors / Modules ROHS | C3190555 | D3PAK | Tube-packed | 625W | -55℃~+150℃@(Tj) | 145A | 900V | - | PT (Through Type) | 3.1V@15V,47A | 149ns | 18ns | 200nC | - | 1.389mJ | 1.625mJ | ||
| | Min: 1 Mult: 1 | 0 | APT20GN60SDQ2G | Microchip Tech | 136W 40A 600V FS(Field Stop) D3PAK IGBT Transistors / Modules ROHS | C3190556 | D3PAK | Tube-packed | 136W | -55℃~+175℃@(Tj) | 40A | 600V | - | FS(Field Stop) | 1.9V@15V,20A | 140ns | 9ns | 120nC | 30ns | 0.58mJ | 0.23mJ | ||
| | Min: 1 Mult: 1 | 0 | FZ1600R12HP4HOSA2 | Infineon Technologies | 9.4kW 2.4kA 1.2kV IGBT Transistors / Modules ROHS | C3171198 | - | Tray | 9.4kW | -40℃~+150℃@(Tj) | 2.4kA | 1.2kV | 98nF@25V | - | 2.05V@15V,1.6kA | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1800R17HE4B9NPSA1 | Infineon Technologies | 11.5kW 1.8kA 1.7kV IGBT Transistors / Modules ROHS | C3171207 | - | Bag-packed | 11.5kW | - | 1.8kA | 1.7kV | 145nF@25V | - | 2.3V@15V,1.8kA | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM50GP60B2BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171214 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG1G200US60L | onsemi | 695W 200A 600V IGBT Transistors / Modules ROHS | C3171230 | - | Bag-packed | 695W | -40℃~+150℃@(Tj) | 200A | 600V | - | - | 2.7V@15V,200A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC30KDSTRLP-IR | Infineon Technologies | 100W 28A 600V D2PAK IGBT Transistors / Modules ROHS | C3171235 | D2PAK | Bag-packed | 100W | -55℃~+150℃@(Tj) | 28A | 600V | - | - | - | - | - | - | 42ns | 0.58mJ | 0.6mJ | ||
| | Min: 1 Mult: 1 | 0 | RJP43F4ADPP-MB#T2F | RENESAS | IGBT Transistors / Modules ROHS | C3171384 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L400R07W3S5B11BPSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171403 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ800R17KF4CNOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171405 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP3042DPP-00#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171411 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IGT5E10CS | HARRIS | IGBT Transistors / Modules ROHS | C3171413 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FD401R17KF6CB2NOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171418 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM100GB120DN2HOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171427 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MGP4N60ED | onsemi | IGBT Transistors / Modules ROHS | C3171513 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4RC10SDPBF | Infineon Technologies | 38W 14A 600V DPAK IGBT Transistors / Modules ROHS | C3190809 | DPAK | Bag-packed | 38W | -55℃~+150℃@(Tj) | 14A | 600V | - | - | 1.8V@15V,8A | 815ns | 76ns | 15nC | 28ns | 3.28mJ | 0.31mJ |