IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5097
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5097
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Power Dissipation (Pd)
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
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Total Gate Charge (Qg@Ic,Vge)
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Turn?on Switching Loss (Eon)
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Turn?off Delay Time (Td(off))
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Turn?on Delay Time (Td(on))
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Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
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|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?on Switching Loss (Eon)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
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| | Min: 1 Mult: 1 | 0  | HGTD10N40F1S | HARRIS | 75W 12A 400V TO-252(DPAK) IGBT Transistors / Modules ROHS | C3193946 | TO-252(DPAK) | Bag-packed | 75W | -55℃~+150℃@(Tj) | 12A | 400V | - | - | 2.5V@10V,5A | 13.4nC | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTD3N60B3S9A | HARRIS | 33.3W 7A 600V TO-252-3(DPAK) IGBT Transistors / Modules ROHS | C3193949 | TO-252-3(DPAK) | Bag-packed | 33.3W | -55℃~+150℃@(Tj) | 7A | 600V | - | - | 2.1V@15V,3.5A | 21nC | 0.066mJ | 105ns | 18ns | 16ns | 0.088mJ | ||
| | Min: 1 Mult: 1 | 0 | HGTD8P50G1S | HARRIS | 66W 12A 500V TO-252AA IGBT Transistors / Modules ROHS | C3193963 | TO-252AA | Bag-packed | 66W | -55℃~+150℃@(Tj) | 12A | 500V | - | - | 2.9V@15V,3A | 30nC | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGSL15B60KDPBF-INF | Infineon Technologies | 208W 31A 600V NPT (non-penetrating type) TO-262 IGBT Transistors / Modules ROHS | C3193984 | TO-262 | Bag-packed | 208W | -55℃~+150℃@(Tj) | 31A | 600V | - | NPT (non-penetrating type) | 2.2V@15V,15A | 56nC | 0.22mJ | 184ns | 34ns | - | 0.34mJ | ||
| | Min: 1 Mult: 1
Full Reel: 3000
| 0 | TIG030TS-TL-E | onsemi | 400V TSSOP-8 IGBT Transistors / Modules ROHS | C3194521 | TSSOP-8 | Tape & Reel (TR) | - | - | - | 400V | - | - | 5.4V@4V,150A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APTGT300A60TG | Microchip Tech | 935W 430A 600V FS(Field Stop) SP4 IGBT Transistors / Modules ROHS | C3193301 | SP4 | Bag-packed | 935W | -40℃~+175℃@(Tj) | 430A | 600V | 18.4nF@25V | FS(Field Stop) | 1.9V@15V,300A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4PSC71UPBF | Infineon Technologies | 350W 85A 600V TO-274AA IGBT Transistors / Modules ROHS | C3193350 | TO-274AA | Bag-packed | 350W | -55℃~+150℃@(Tj) | 85A | 600V | - | - | - | - | 0.42mJ | - | - | - | 1.99mJ | ||
| | Min: 1 Mult: 1 | 0 | APT35GP120B2D2G | Microchip Tech | TO-247-3 IGBT Transistors / Modules ROHS | C3193358 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IGTH20N50 | HARRIS | 20A 500V TO-218 IGBT Transistors / Modules ROHS | C3193369 | TO-218 | Bag-packed | - | - | 20A | 500V | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJH60M2DPE-00#J3 | RENESAS | 63W 25A 600V LDPAK-4 IGBT Transistors / Modules ROHS | C3189676 | LDPAK-4 | Bag-packed | 63W | - | 25A | 600V | - | - | 2.5V@15V,12A | 33nC | 0.18mJ | 70ns | 32ns | 85ns | 0.18mJ | ||
| | Min: 1 Mult: 1 | 0 | FS35R12YT3BOMA1 | Infineon Technologies | 225W 40A 1.2kV IGBT Transistors / Modules ROHS | C3171401 | - | Bag-packed | 225W | -40℃~+125℃@(Tj) | 40A | 1.2kV | 2.5nF@25V | - | 2.15V@15V,35A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L400R07W3S5B11BPSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171403 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP3042DPP-00#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171411 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IGT5E10CS | HARRIS | IGBT Transistors / Modules ROHS | C3171413 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SIGC109T120R3 | Infineon Technologies | 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3190657 | - | Bag-packed | - | -55℃~+150℃@(Tj) | - | 1.2kV | - | FS(Field Stop) | 2.1V@15V,100A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF23MR12W1M1C11BPSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171172 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IGW50N65HS | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171176 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MGP11N60ED | onsemi | IGBT Transistors / Modules ROHS | C3171209 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM200GB170DLCHOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171220 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG1G200US60L | onsemi | 695W 200A 600V IGBT Transistors / Modules ROHS | C3171230 | - | Bag-packed | 695W | -40℃~+150℃@(Tj) | 200A | 600V | - | - | 2.7V@15V,200A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC30KDSTRLP-IR | Infineon Technologies | 100W 28A 600V D2PAK IGBT Transistors / Modules ROHS | C3171235 | D2PAK | Bag-packed | 100W | -55℃~+150℃@(Tj) | 28A | 600V | - | - | - | - | 0.6mJ | - | - | 42ns | 0.58mJ | ||
| | Min: 1 Mult: 1 | 0 | RJP30H1DPP-MZ#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171291 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1200R12KF5NOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171241 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS25R12KE3GBOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171244 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1800R12HP4B9NPSA1 | Infineon Technologies | 10.5kW 2.7kA 1.2kV IGBT Transistors / Modules ROHS | C3171245 | - | Bag-packed | 10.5kW | -40℃~+150℃@(Tj) | 2.7kA | 1.2kV | 110nF@25V | - | 2.05V@15V,1.8kA | - | - | - | - | - | - |