IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5097
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5097
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
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| | Min: 1 Mult: 1 | 0  | IRGS6B60KDTRLP | Infineon Technologies | 90W 13A 600V NPT (non-penetrating type) D2PAK IGBT Transistors / Modules ROHS | C3190501 | D2PAK | Bag-packed | 215ns | 90W | 25ns | -55℃~+150℃@(Tj) | 13A | 600V | - | NPT (non-penetrating type) | 2.2V@15V,5A | 18.2nC | 70ns | 0.135mJ | 0.11mJ | ||
| | Min: 1 Mult: 1 | 0 | IFS75S12N3T4_B11 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171493 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS15B60KDTRRP | Infineon Technologies | 208W 31A 600V NPT (non-penetrating type) D2PAK IGBT Transistors / Modules ROHS | C3190518 | D2PAK | Bag-packed | 184ns | 208W | 34ns | -55℃~+150℃@(Tj) | 31A | 600V | - | NPT (non-penetrating type) | 2.2V@15V,15A | 56nC | 92ns | 0.34mJ | 0.22mJ | ||
| | Min: 1 Mult: 1 | 0 | HGT1S12N60B3S | HARRIS | 104W 27A 600V D2PAK(TO-263) IGBT Transistors / Modules ROHS | C3190542 | D2PAK(TO-263) | Bag-packed | 150ns | 104W | 26ns | -55℃~+150℃@(Tj) | 27A | 600V | - | - | 2.1V@15V,12A | 68nC | - | 0.25mJ | 0.304mJ | ||
| | Min: 1 Mult: 1 | 0 | MGP4N60ED | onsemi | IGBT Transistors / Modules ROHS | C3171513 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APT20GN60SDQ2G | Microchip Tech | 136W 40A 600V FS(Field Stop) D3PAK IGBT Transistors / Modules ROHS | C3190556 | D3PAK | Tube-packed | 140ns | 136W | 9ns | -55℃~+175℃@(Tj) | 40A | 600V | - | FS(Field Stop) | 1.9V@15V,20A | 120nC | 30ns | 0.58mJ | 0.23mJ | ||
| | Min: 1 Mult: 1 | 0 | IRG4RC20FPBF | Infineon Technologies | 66W 22A 600V DPAK IGBT Transistors / Modules ROHS | C3190813 | DPAK | Bag-packed | 194ns | 66W | 26ns | -55℃~+150℃@(Tj) | 22A | 600V | - | - | 2.1V@15V,12A | 27nC | - | 0.92mJ | 0.19mJ | ||
| | Min: 1 Mult: 1 | 0 | RJP43F4ADPP-MB#T2F | RENESAS | IGBT Transistors / Modules ROHS | C3171384 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF450R12ME4B11BPSA1 | Infineon Technologies | 2.25kW 675A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198658 | - | Bag-packed | - | 2.25kW | - | -40℃~+150℃ | 675A | 1.2kV | 28nF@25V | FS(Field Stop) | 2.1V@15V,450A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L100R07W2E3B11BOMA1 | Infineon Technologies | 300W 117A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3198665 | - | Bag-packed | - | 300W | - | -40℃~+150℃ | 117A | 650V | 6.2nF@25V | FS(Field Stop) | 1.9V@15V,100A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ800R45KL3B5NOSA2 | Infineon Technologies | 9kW 1.6kA 4.5kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198668 | - | Tray | - | 9kW | - | -50℃~+125℃ | 1.6kA | 4.5kV | 3.1nF@25V | FS(Field Stop) | 2.85V@15V,800A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM75GAR120DN2HOSA1 | Infineon Technologies | 235W 30A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198694 | - | Tray | - | 235W | - | - | 30A | 1.2kV | 1nF@25V | FS(Field Stop) | 2.2V@15V,15A | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM35GP120GBOSA1 | Infineon Technologies | 230W 45A 1.2kV IGBT Transistors / Modules ROHS | C3198729 | - | Tray | - | 230W | - | -40℃~+125℃ | 45A | 1.2kV | 1.5nF@25V | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP50R12KT4BOSA1 | Infineon Technologies | 280W 50A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198748 | - | Bag-packed | - | 280W | - | -40℃~+150℃ | 50A | 1.2kV | 2.8nF@25V | FS(Field Stop) | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
| 0 | LGB8245TI | Littelfuse | IGBT Transistors / Modules ROHS | C3171026 | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJH30E3DPK-M2#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171036 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGB8206NSL3G | onsemi | IGBT Transistors / Modules ROHS | C3171048 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC20KDPBF-IR | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171076 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | STP8057 | onsemi | IGBT Transistors / Modules ROHS | C3171094 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP3053DPP-A9#T2F | RENESAS | IGBT Transistors / Modules ROHS | C3171097 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1200R12KE3NOSA1 | Infineon Technologies | 5.6kW 1.7kA 1.2kV IGBT Transistors / Modules ROHS | C3171105 | - | Bag-packed | - | 5.6kW | - | -40℃~+125℃@(Tj) | 1.7kA | 1.2kV | 86nF@25V | - | 2.15V@15V,1.2kA | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ3600R17HE4PHPSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171108 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP63F3ADPP-B1#T2F | RENESAS | IGBT Transistors / Modules ROHS | C3171121 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IKU10N60RXK | Infineon Technologies | 150W 20A 600V FS(Field Stop) TO-251 IGBT Transistors / Modules ROHS | C3171132 | TO-251 | Bag-packed | 192ns | 150W | 14ns | -40℃~+175℃@(Tj) | 20A | 600V | - | FS(Field Stop) | 2.1V@15V,10A | 64nC | 62ns | 0.38mJ | 0.21mJ | ||
| | Min: 1 Mult: 1 | 0 | RJP63F3DPP-Z0#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171153 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - |