IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5097
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5097
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Forward Voltage (Vf@If)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Forward Voltage (Vf@If)
|
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| | Min: 1 Mult: 1 | 0  | HGTH12N40CID | HARRIS | IGBT Transistors / Modules ROHS | C3171452 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF800R17KP4B2NOSA2 | Infineon Technologies | 1.2kW 1.2kA 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3171459 | - | Tray | 1.2kW | -40℃~+150℃@(Tj) | 1.2kA | 1.7kV | 65nF@25V | FS(Field Stop) | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC30KDPBF-INF | Infineon Technologies | 100W 28A 600V TO-220AB IGBT Transistors / Modules ROHS | C3171464 | TO-220AB | Bag-packed | 100W | -55℃~+150℃@(Tj) | 28A | 600V | - | - | - | 42ns | 0.58mJ | 0.6mJ | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1800R12KL4C | Infineon Technologies | 11.5kW 2.85kA 1.2kV IGBT Transistors / Modules ROHS | C3171485 | - | Bag-packed | 11.5kW | -40℃~+125℃@(Tj) | 2.85kA | 1.2kV | 135nF@25V | - | 2.6V@15V,1.8kA | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ800R12KL4CNOSA1 | Infineon Technologies | 5.7kW 1.3kA 1.2kV IGBT Transistors / Modules ROHS | C3171492 | - | Bag-packed | 5.7kW | -40℃~+125℃@(Tj) | 1.3kA | 1.2kV | 56nF@25V | - | 2.6V@15V,800A | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG30N60C3 | HARRIS | 208W 63A 600V SUPER-247(TO-274AA) IGBT Transistors / Modules ROHS | C3193345 | SUPER-247(TO-274AA) | Bag-packed | 208W | -55℃~+150℃@(Tj) | 63A | 600V | - | - | 1.8V@15V,30A | - | 2.5mJ | 1.05mJ | 320ns | 40ns | 250nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4PSC71UPBF | Infineon Technologies | 350W 85A 600V TO-274AA IGBT Transistors / Modules ROHS | C3193350 | TO-274AA | Bag-packed | 350W | -55℃~+150℃@(Tj) | 85A | 600V | - | - | - | - | 1.99mJ | 0.42mJ | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APT35GP120B2D2G | Microchip Tech | TO-247-3 IGBT Transistors / Modules ROHS | C3193358 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IGTH20N50 | HARRIS | 20A 500V TO-218 IGBT Transistors / Modules ROHS | C3193369 | TO-218 | Bag-packed | - | - | 20A | 500V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP15N50C1 | HARRIS | 75W 15A 500V TO-220 IGBT Transistors / Modules ROHS | C3193380 | TO-220 | Bag-packed | 75W | -55℃~+150℃@(Tj) | 15A | 500V | - | - | 3.2V@20V,35A | - | - | - | - | - | 33nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | AOT15B65M1 | Alpha & Omega Semicon | TO-220 IGBT Transistors / Modules ROHS | C3193382 | TO-220 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXYP24N100C4 | Littelfuse/IXYS | 375W 76A 1kV PT (Through Type) TO-220 IGBT Transistors / Modules ROHS | C3193399 | TO-220 | Tube-packed | 375W | -55℃~+175℃@(Tj) | 76A | 1kV | - | PT (Through Type) | 2.3V@15V,24A | 35ns | 1mJ | 3.6mJ | 147ns | 15ns | 43nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGIB15B60KD1P-IR | Infineon Technologies | 52W 19A 600V TO-220-3 IGBT Transistors / Modules ROHS | C3193406 | TO-220-3 | Bag-packed | 52W | - | 19A | 600V | - | - | 2.2V@15V,15A | 67ns | 0.334mJ | 0.127mJ | 173ns | 30ns | 84nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP12N60C3R | HARRIS | 104W 24A 600V TO-220-3 IGBT Transistors / Modules ROHS | C3193428 | TO-220-3 | Bag-packed | 104W | -55℃~+150℃@(Tj) | 24A | 600V | - | - | 2.2V@15V,12A | 37ns | 0.34mJ | 0.4mJ | 120ns | 37ns | 71nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP10N50E1 | HARRIS | 60W 10A 500V TO-220-3 IGBT Transistors / Modules ROHS | C3193433 | TO-220-3 | Bag-packed | 60W | -55℃~+150℃@(Tj) | 10A | 500V | - | - | 3.2V@20V,17.5A | - | - | - | - | - | 19nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXGT6N170A | Littelfuse/IXYS | 75W 6A 1.7kV NPT (non-penetrating type) TO-268AA IGBT Transistors / Modules ROHS | C3194064 | TO-268AA | Tube-packed | 75W | -55℃~+150℃@(Tj) | 6A | 1.7kV | - | NPT (non-penetrating type) | 7V@15V,3A | - | 0.18mJ | 0.59mJ | 220ns | 46ns | 18.5nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGH15N120RUFDTU | onsemi | 180W 24A 1.2kV TO-3P IGBT Transistors / Modules ROHS | C3194106 | TO-3P | Bag-packed | 180W | -55℃~+150℃@(Tj) | 24A | 1.2kV | - | - | 3V@15V,15A | 100ns | - | - | 60ns | 20ns | 108nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | NCE10TD60B | Wuxi NCE Power Semiconductor | TO-220 IGBT Transistors / Modules ROHS | C2686736 | TO-220 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BG150B12UY3-I | BYD | IGBT Transistors / Modules ROHS | C489796 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BG100B12UX3-I | BYD | IGBT Transistors / Modules ROHS | C489798 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RGTH60TS65DGC11 | ROHM Semicon | TO-247N IGBT Transistors / Modules ROHS | C509281 | TO-247N | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | DGTD120T25S1PT | Diodes Incorporated | 348W 50A 1.2kV FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS | C705308 | TO-247-3 | Tube-packed | 348W | - | 50A | 1.2kV | - | FS(Field Stop) | 2.4V@15V,25A | 100ns | 0.55mJ | 1.44mJ | 269ns | 73ns | 204nC | - | - | ||
| | Min: 1 Mult: 1 | 0 | AIGW50N65H5 | Infineon Technologies | 270W 83A 650V TO-247-3-41 IGBT Transistors / Modules ROHS | C533153 | TO-247-3-41 | Tube-packed | 270W | -40℃~+175℃@(Tj) | 83A | 650V | 2.8nF@25V | - | 4V@500uA | - | 0.16mJ | 0.45mJ | 173ns | 21ns | 116nC@50A,15V | 1.66V@50A,15V | - | ||
| | Min: 1 Mult: 1
Full Reel: 2500
| 0 | AIHD04N60RF | Infineon Technologies | TO-252-3-313 IGBT Transistors / Modules ROHS | C533155 | TO-252-3-313 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 2500
| 0 | AIHD06N60R | Infineon Technologies | TO-252-3-313 IGBT Transistors / Modules ROHS | C533156 | TO-252-3-313 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |