IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5096
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5096
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?on Switching Loss (Eon)
|
Collector Current (Ic)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Turn?on Switching Loss (Eon)
|
Collector Current (Ic)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
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| | Min: 1 Mult: 1 | 0  | FGPF30N30TTU | onsemi | 44.6W 300V TO-220F-3 IGBT Transistors / Modules ROHS | C3193566 | TO-220F-3 | Tube-packed | 130ns | 44.6W | 22ns | -55℃~+150℃@(Tj) | 300V | - | - | 1.5V@15V,10A | 65nC | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FGH30N120FTDTU | onsemi | 339W 60A 1.2kV FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS | C3193631 | TO-247 | Tube-packed | - | 339W | - | - | 1.2kV | - | FS(Field Stop) | 2V@15V,30A | 208nC | - | 60A | 730ns | - | ||
| | Min: 1 Mult: 1 | 0 | IRGP4760DPBF | Infineon Technologies | 325W 90A 650V TO-247AC IGBT Transistors / Modules ROHS | C3193721 | TO-247AC | Tube-packed | 140ns | 325W | 70ns | -40℃~+175℃@(Tj) | 650V | - | - | 2V@15V,48A | 145nC | 1.7mJ | 90A | 170ns | 1mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP4760PBF | Infineon Technologies | 325W 90A 650V TO-247AC IGBT Transistors / Modules ROHS | C3193776 | TO-247AC | Tube-packed | 140ns | 325W | 70ns | -40℃~+175℃@(Tj) | 650V | - | - | 2V@15V,48A | 145nC | 1.7mJ | 90A | - | 1mJ | ||
| | Min: 1 Mult: 1 | 0 | IRG7PH35U-EP | Infineon Technologies | 210W 55A 1.2kV TO-247AD IGBT Transistors / Modules ROHS | C3193786 | TO-247AD | Bag-packed | 160ns | 210W | 30ns | -55℃~+175℃@(Tj) | 1.2kV | - | - | 2.2V@15V,20A | 130nC | 1.06mJ | 55A | - | 0.62mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP50B60PD1-EP | Infineon Technologies | 390W 75A 600V NPT (non-penetrating type) TO-247AD IGBT Transistors / Modules ROHS | C3193806 | TO-247AD | Bag-packed | 130ns | 390W | 30ns | - | 600V | - | NPT (non-penetrating type) | 2.85V@15V,50A | 205nC | 0.255mJ | 75A | 42ns | 0.375mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGP4790D-EPBF | Infineon Technologies | 455W 140A 650V TO-247AD IGBT Transistors / Modules ROHS | C3193821 | TO-247AD | Bag-packed | - | 455W | - | -40℃~+175℃@(Tj) | 650V | - | - | - | - | 2.5mJ | 140A | 170ns | 2.2mJ | ||
| | Min: 1 Mult: 1 | 0 | IRG8P25N120KD-EPBF | Infineon Technologies | 180W 40A 1.2kV TO-247AD IGBT Transistors / Modules ROHS | C3193846 | TO-247AD | Bag-packed | 170ns | 180W | 20ns | -40℃~+150℃@(Tj) | 1.2kV | - | - | 2V@15V,15A | 135nC | 0.8mJ | 40A | 70ns | 0.9mJ | ||
| | Min: 1 Mult: 1 | 0 | HGT1S2N120CN | onsemi | 104W 13A 1.2kV NPT (non-penetrating type) TO-262 IGBT Transistors / Modules ROHS | C3193976 | TO-262 | Tube-packed | 205ns | 104W | 25ns | -55℃~+150℃@(Tj) | 1.2kV | - | NPT (non-penetrating type) | 2.4V@15V,2.6A | 30nC | 0.096mJ | 13A | - | 0.355mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGSL10B60KDPBF | Infineon Technologies | 156W 22A 600V NPT (non-penetrating type) TO-262 IGBT Transistors / Modules ROHS | C3193981 | TO-262 | Bag-packed | 230ns | 156W | 30ns | -55℃~+150℃@(Tj) | 600V | - | NPT (non-penetrating type) | 2.2V@15V,10A | 38nC | 0.14mJ | 22A | 90ns | 0.25mJ | ||
| | Min: 1 Mult: 1 | 0 | GT15J341,S4X | TOSHIBA | TO-220SIS IGBT Transistors / Modules ROHS | C20247094 | TO-220SIS | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMS6G10US60 | onsemi | 66W 10A 600V PM-25-AA IGBT Transistors / Modules ROHS | C3188853 | PM-25-AA | Box-packed | - | 66W | - | -40℃~+150℃@(Tj) | 600V | 710pF@30V | - | 2.7V@15V,10A | - | - | 10A | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG2G50US60 | onsemi | 250W 50A 600V PM-7-GA IGBT Transistors / Modules ROHS | C3190017 | PM-7-GA | Bag-packed | - | 250W | - | -40℃~+150℃@(Tj) | 600V | 3.46nF@30V | - | - | - | - | 50A | - | - | ||
| | Min: 1 Mult: 1 | 0 | FMG2G400US60 | onsemi | 1.136kW 400A 600V PM-7-IA IGBT Transistors / Modules ROHS | C3190027 | PM-7-IA | Box-packed | - | 1.136kW | - | -40℃~+150℃@(Tj) | 600V | - | - | - | - | - | 400A | - | - | ||
| | Min: 1 Mult: 1 | 0 | ISL9V3036S3STSB82029A | onsemi | 150W 21A 360V D2PAK(TO-263) IGBT Transistors / Modules ROHS | C3190537 | D2PAK(TO-263) | Bag-packed | 4.8us | 150W | - | -40℃~+175℃@(Tj) | 360V | - | - | 1.6V@4V,6A | 17nC | - | 21A | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGS4630DPBF | Infineon Technologies | 206W 47A 600V TO-263 IGBT Transistors / Modules ROHS | C3191792 | TO-263 | Tube-packed | - | 206W | - | -40℃~+175℃@(Tj) | 600V | - | - | - | - | 0.095mJ | 47A | 100ns | 0.35mJ | ||
| | Min: 1 Mult: 1 | 0 | IRGB4B60KD1PBF | Infineon Technologies | 63W 11A 600V NPT (non-penetrating type) TO-220AB IGBT Transistors / Modules ROHS | C3193538 | TO-220AB | Bag-packed | 100ns | 63W | 22ns | -55℃~+175℃@(Tj) | 600V | - | NPT (non-penetrating type) | 2.5V@15V,4A | 12nC | 0.073mJ | 11A | 93ns | 0.047mJ | ||
| | Min: 1 Mult: 1 | 0 | RJH1CV7DPQ-E0#T2 | RENESAS | 320W 70A 1.2kV TO-247 IGBT Transistors / Modules ROHS | C3193613 | TO-247 | Bag-packed | 185ns | 320W | 53ns | - | 1.2kV | - | - | 2.3V@15V,35A | 166nC | 3.2mJ | 70A | 200ns | 2.5mJ | ||
| | Min: 1 Mult: 1
Full Reel: 2500
| 0 | ISL9V3036D3ST | onsemi | 150W 21A 360V TO-252(DPAK) IGBT Transistors / Modules ROHS | C3193943 | TO-252(DPAK) | Tape & Reel (TR) | 4.8us | 150W | - | -40℃~+175℃@(Tj) | 360V | - | - | 1.6V@4V,6A | 17nC | - | 21A | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGSL4B60KD1PBF | Infineon Technologies | 63W 11A 600V NPT (non-penetrating type) TO-262 IGBT Transistors / Modules ROHS | C3193978 | TO-262 | Bag-packed | 100ns | 63W | 22ns | -55℃~+175℃@(Tj) | 600V | - | NPT (non-penetrating type) | 2.5V@15V,4A | 12nC | 0.073mJ | 11A | 93ns | 0.047mJ | ||
| | Min: 1 Mult: 1 | 0 | FGA40N60UFDTU | onsemi | 160W 40A 600V TO-3P IGBT Transistors / Modules ROHS | C3194103 | TO-3P | Tube-packed | 65ns | 160W | 15ns | -55℃~+150℃@(Tj) | 600V | - | - | 3V@15V,20A | 77nC | 0.47mJ | 40A | 95ns | 0.13mJ | ||
| | Min: 1 Mult: 1 | 0 | NTE3320 | NTE ELECTRONICS, INC. | 240W 50A 600V TO-3P IGBT Transistors / Modules ROHS | C17386215 | TO-3P | Bag-packed | 300ns | 240W | 240ns | - | 600V | - | - | 2.45V@15V,50A | - | 1.3mJ | 50A | - | 1.34mJ | ||
| | Min: 1 Mult: 1 | 0 | NTE3300 | NTE ELECTRONICS, INC. | 30W 10A 400V TO-220 IGBT Transistors / Modules ROHS | C17509067 | TO-220 | Bag-packed | 450ns | 30W | 150ns | - | 400V | - | - | 8V@20V,130A | - | - | 10A | - | - | ||
| | Min: 1 Mult: 1 | 0 | NTE3323 | NTE ELECTRONICS, INC. | 200W 25A 1.2kV TO-3P IGBT Transistors / Modules ROHS | C17437635 | TO-3P | Bag-packed | 800ns | 200W | 400ns | - | 1.2kV | - | - | 4V@15V,25A | - | - | 25A | - | - | ||
| | Min: 1 Mult: 1 | 0 | NTE3302 | NTE ELECTRONICS, INC. | 30W 8A 600V TO-220 IGBT Transistors / Modules ROHS | C17183300 | TO-220 | Bag-packed | 500ns | 30W | 400ns | - | 600V | - | - | 4V@15V,8A | - | - | 8A | - | - |