IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5096
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5096
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Input Capacitance (Cies@Vce)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Input Capacitance (Cies@Vce)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1 | 0 | NCE25TD135LT | Wuxi NCE Power Semiconductor | TO-247 IGBT Transistors / Modules ROHS | C2686747 | TO-247 | Tube-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGM75HF12A1TFD | Hangzhou Silan Microelectronics | IGBT Transistors / Modules ROHS | C2761784 | - | Box-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGT25T120FD1P7 | Hangzhou Silan Microelectronics | TO-247-3 IGBT Transistors / Modules ROHS | C2761785 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0  | KGF40N65KDC-U/P | KEC Semicon | TO-247 IGBT Transistors / Modules ROHS | C2976610 | TO-247 | Tube-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXA60IF1200NA | Littelfuse/IXYS | 290W 88A 1.2kV PT (Through Type) SOT-227B IGBT Transistors / Modules ROHS | C3199832 | SOT-227B | Tube-packed | 290W | -40℃~+150℃@(Tj) | 88A | 1.2kV | PT (Through Type) | 2.1V@15V,50A | - | ||
| | Min: 1 Mult: 1 | 0 | BSM100GD120DLCBOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171218 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FDDF80R12W1H3B52BOMA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171238 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF200R12MT4 | Infineon Technologies | 1.05kW 295A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3171242 | - | Bag-packed | 1.05kW | - | 295A | 1.2kV | FS(Field Stop) | 2.15V@15V,200A | 14nF@25V | ||
| | Min: 1 Mult: 1 | 0 | HGT1S20N35F3VLR4505 | HARRIS | IGBT Transistors / Modules ROHS | C3171247 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM10GP60BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171258 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF450R06ME3BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171260 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF2400RB12IP7BPSA1 | Infineon Technologies | 2.4kA 750V IGBT Transistors / Modules ROHS | C3171269 | - | Tray | - | - | 2.4kA | 750V | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ1800R17HP4B29BOSA2 | Infineon Technologies | 11.5kW 1.8kA 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3171272 | - | Tray | 11.5kW | -40℃~+150℃@(Tj) | 1.8kA | 1.7kV | FS(Field Stop) | 2.25V@15V,1.8kA | 145nF@25V | ||
| | Min: 1 Mult: 1 | 0 | BSM75GB120DN2HOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171310 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MGP20N36CL | onsemi | IGBT Transistors / Modules ROHS | C3171311 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4RC10SDTRPBF-IR | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171320 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP20N35F3ULR3935 | HARRIS | IGBT Transistors / Modules ROHS | C3171332 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FD800R33KL2C-K_B5 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171333 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP15R12KS4CBOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171340 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGB20N35CLT4 | MOTOROLA | IGBT Transistors / Modules ROHS | C3171348 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | DF400R07PE4RB6BOSA1 | Infineon Technologies | 1.1kW 450A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3171353 | - | Bag-packed | 1.1kW | -40℃~+150℃@(Tj) | 450A | 650V | FS(Field Stop) | - | 18.5nF@25V | ||
| | Min: 1 Mult: 1 | 0 | BSM100GB120DN2B2HOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171356 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC40KPBF-IR | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171357 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP35R12KT4B16BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171366 | - | Bag-packed | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RJP5001APP-00#T2 | RENESAS | IGBT Transistors / Modules ROHS | C3171372 | - | Bag-packed | - | - | - | - | - | - | - |