IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5095
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5095
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Power Dissipation (Pd)
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
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Turn?off Switching Loss (Eoff)
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Turn?on Switching Loss (Eon)
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Turn?off Delay Time (Td(off))
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Turn?on Delay Time (Td(on))
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Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation (Pd)
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Turn?off Delay Time (Td(off))
|
Turn?on Delay Time (Td(on))
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
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| | Min: 1 Mult: 1 | 0 | FF100R12MT4 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171027 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0  | FZ1600R17KF6CB2S1NOSA1 | Infineon Technologies | 10.5kW 1.6kA 1.7kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3171055 | - | Bag-packed | 10.5kW | -40℃~+150℃@(Tj) | 1.6kA | 1.7kV | 130nF@25V | FS(Field Stop) | 2.25V@15V,1.6kA | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | BSM75GD120DN2BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171067 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
| 0 | LGB8206ARI | Littelfuse | IGBT Transistors / Modules ROHS | C3171090 | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGB15N40CLT4 | onsemi | IGBT Transistors / Modules ROHS | C3171093 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4PC50KDPBF-IR | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171101 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | STP8053 | onsemi | IGBT Transistors / Modules ROHS | C3171115 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F4150R06KL4BOSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171124 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | DDB6U180N16RRBPSA1 | Infineon Technologies | IGBT Transistors / Modules ROHS | C3171126 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MGP7N60E | onsemi | IGBT Transistors / Modules ROHS | C3171127 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXXN110N65B4H1 | Littelfuse/IXYS | 750W 215A 650V PT (Through Type) SOT-227B IGBT Transistors / Modules ROHS | C3193037 | SOT-227B | Tube-packed | 750W | -55℃~+175℃@(Tj) | 215A | 650V | 3.65nF@25V | PT (Through Type) | 2.1V@15V,110A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IXXN110N65C4H1 | Littelfuse/IXYS | 750W 210A 650V PT (Through Type) SOT-227B IGBT Transistors / Modules ROHS | C3193038 | SOT-227B | Tube-packed | 750W | -55℃~+175℃@(Tj) | 210A | 650V | 3.69nF@25V | PT (Through Type) | 2.35V@15V,110A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRGB30B60KPBF | Infineon Technologies | 370W 78A 600V NPT (non-penetrating type) TO-220AB IGBT Transistors / Modules ROHS | C3193521 | TO-220AB | Bag-packed | 370W | -55℃~+175℃@(Tj) | 78A | 600V | - | NPT (non-penetrating type) | - | 0.825mJ | 0.35mJ | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC30FD1PBF | Infineon Technologies | 100W 31A 600V TO-220AB IGBT Transistors / Modules ROHS | C3193524 | TO-220AB | Bag-packed | 100W | -55℃~+150℃@(Tj) | 31A | 600V | - | - | 1.8V@15V,17A | 1.42mJ | 0.37mJ | 250ns | 22ns | 57nC | 46ns | ||
| | Min: 1 Mult: 1 | 0 | IRGB4059DPBF | Infineon Technologies | 56W 8A 600V TO-220AB IGBT Transistors / Modules ROHS | C3193528 | TO-220AB | Bag-packed | 56W | -55℃~+175℃@(Tj) | 8A | 600V | - | - | 2.05V@15V,4A | 0.075mJ | 0.035mJ | 65ns | 25ns | 13nC | 55ns | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC40WPBF | Infineon Technologies | 160W 40A 600V TO-220AB IGBT Transistors / Modules ROHS | C3193532 | TO-220AB | Bag-packed | 160W | -55℃~+150℃@(Tj) | 40A | 600V | - | - | - | 0.23mJ | 0.11mJ | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTP5N120CN | onsemi | 167W 25A 1.2kV NPT (non-penetrating type) TO-220AB IGBT Transistors / Modules ROHS | C3193543 | TO-220AB | Bag-packed | 167W | -55℃~+150℃@(Tj) | 25A | 1.2kV | - | NPT (non-penetrating type) | - | 0.64mJ | 0.4mJ | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC40FPBF | Infineon Technologies | 160W 49A 600V TO-220AB IGBT Transistors / Modules ROHS | C3193545 | TO-220AB | Bag-packed | 160W | -55℃~+150℃@(Tj) | 49A | 600V | - | - | - | 1.81mJ | 0.37mJ | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4BC30SPBF | Infineon Technologies | TO-220AB IGBT Transistors / Modules ROHS | C3193547 | TO-220AB | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IRG4IBC20UDPBF | Infineon Technologies | 34W 11.4A 600V TO-220-3 IGBT Transistors / Modules ROHS | C3193554 | TO-220-3 | Bag-packed | 34W | -55℃~+150℃@(Tj) | 11.4A | 600V | - | - | 2.1V@15V,6.5A | 0.13mJ | 0.16mJ | 93ns | 39ns | 27nC | 37ns | ||
| | Min: 1 Mult: 1 | 0 | RJH1BF6RDPQ-80#T2 | RENESAS | 227.2W 55A 1.1kV TO-247 IGBT Transistors / Modules ROHS | C3193596 | TO-247 | Bag-packed | 227.2W | - | 55A | 1.1kV | - | - | 2.7V@15V,55A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | APT25GR120B | Microchip Tech | 521W 75A 1.2kV NPT (non-penetrating type) TO-247 IGBT Transistors / Modules ROHS | C3193605 | TO-247 | Bag-packed | 521W | -55℃~+150℃@(Tj) | 75A | 1.2kV | - | NPT (non-penetrating type) | 3.2V@15V,25A | 0.427mJ | 0.742mJ | 122ns | 16ns | 203nC | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG32N60E2 | HARRIS | 208W 50A 600V TO-247 IGBT Transistors / Modules ROHS | C3193610 | TO-247 | Bag-packed | 208W | -55℃~+150℃@(Tj) | 50A | 600V | - | - | 2.9V@15V,32A | - | - | - | - | 265nC | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG20N50C1D | HARRIS | 75W 26A 500V TO-247 IGBT Transistors / Modules ROHS | C3193615 | TO-247 | Bag-packed | 75W | -55℃~+150℃@(Tj) | 26A | 500V | - | - | 3.2V@20V,35A | - | - | - | - | 33nC | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG34N100E2 | HARRIS | 208W 55A 1kV TO-247 IGBT Transistors / Modules ROHS | C3193620 | TO-247 | Bag-packed | 208W | -55℃~+150℃@(Tj) | 55A | 1kV | - | - | 3.3V@15V,34A | - | - | - | - | 240nC | - |