IGBT Transistors / Modules
The Results of IGBT Transistors / Modules
5096
Manufacturer
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Power Dissipation (Pd)
Diode Forward Voltage (Vf@If)
Diode Reverse Recovery Time (Trr)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Collector Current (Ic)
Input Capacitance (Cies@Vce)
Turn?on Switching Loss (Eon)
Results:
5096
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Forward Voltage (Vf@If)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
|
Diode Forward Voltage (Vf@If)
|
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| | Min: 1 Mult: 1 | 0 | IRGP4069D-EPBF | Infineon Technologies | 268W 76A 600V TO-247AD IGBT Transistors / Modules ROHS | C538097 | TO-247AD | Tube-packed | 105ns | 268W | 46ns | -55℃~+175℃@(Tj) | 76A | 600V | - | - | 1.85V@15V,35A | 104nC | 120ns | 0.632mJ | 0.39mJ | - | - | ||
| | Min: 1 Mult: 1 | 0 | DGTD65T40S2PT | Diodes Incorporated | 230W 80A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS | C705309 | TO-247-3 | Tube-packed | 55ns | 230W | 6ns | - | 80A | 650V | 1.565nF@25V | FS(Field Stop) | 2.3V@15V,40A | 60nC | 60ns | 0.4mJ | 0.5mJ | 1.8V@40A,15V | 1.5V@20A | ||
| | Min: 1 Mult: 1 | 0 | DGTD65T50S1PT | Diodes Incorporated | 375W 100A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS | C705311 | TO-247-3 | Tube-packed | 328ns | 375W | 58ns | - | 100A | 650V | - | FS(Field Stop) | 2.4V@15V,50A | 287nC | 80ns | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0  | NVG800A75L4DSB | onsemi | IGBT Transistors / Modules ROHS | C906525 | - | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NGTB20N120IHTG | onsemi | IGBT Transistors / Modules ROHS | C906625 | - | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NGTB45N60SWG | onsemi | 250W 90A 600V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS | C906629 | TO-247-3 | Tube-packed | - | 250W | - | -55℃~+150℃@(Tj) | 90A | 600V | - | FS(Field Stop) | - | - | 376ns | 0.55mJ | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NGTD30T120F2WP | onsemi | SMD IGBT Transistors / Modules ROHS | C906363 | SMD | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NVG800A75L4DSC | onsemi | IGBT Transistors / Modules ROHS | C906526 | - | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HGTG30N60A4D | onsemi | TO-247AC-3 IGBT Transistors / Modules ROHS | C11756 | TO-247AC-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NCE07T60BI | Wuxi NCE Power Semiconductor | TO-251 IGBT Transistors / Modules ROHS | C2686735 | TO-251 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | NCE25TD135LT | Wuxi NCE Power Semiconductor | TO-247 IGBT Transistors / Modules ROHS | C2686747 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGM75HF12A1TFD | Hangzhou Silan Microelectronics | IGBT Transistors / Modules ROHS | C2761784 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGM100HF12A1TFD | Hangzhou Silan Microelectronics | IGBT Transistors / Modules ROHS | C2761778 | - | Box-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SGT25T120FD1P7 | Hangzhou Silan Microelectronics | TO-247-3 IGBT Transistors / Modules ROHS | C2761785 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | RGTH60TS65DGC13 | ROHM Semicon | 194W 58A 650V FS(Field Stop) TO-247GE IGBT Transistors / Modules ROHS | C2827882 | TO-247GE | Tube-packed | 105ns | 194W | 27ns | -40℃~+175℃@(Tj) | 58A | 650V | - | FS(Field Stop) | 2.1V@15V,30A | 58nC | 58ns | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF200R12KT4HOSA1 | Infineon Technologies | 1.1kW 320A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C2963039 | - | Tray | - | 1.1kW | - | -40℃~+150℃@(Tj) | 320A | 1.2kV | 14nF@25V | FS(Field Stop) | 2.15V@15V,200A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FP150R12KT4BPSA1 | Infineon Technologies | 150A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C2963043 | - | Tray | - | - | - | -40℃~+150℃@(Tj) | 150A | 1.2kV | 9.35nF@25V | FS(Field Stop) | 2.1V@15V,150A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L400R07ME4B22BOSA1 | Infineon Technologies | 1.15kW 450A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3198630 | - | Bag-packed | - | 1.15kW | - | -40℃~+150℃ | 450A | 650V | 26nF@25V | FS(Field Stop) | 1.95V@15V,400A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L400R07ME4B23BOSA1 | Infineon Technologies | 1.15kW 450A 650V FS(Field Stop) IGBT Transistors / Modules ROHS | C3198632 | - | Bag-packed | - | 1.15kW | - | -40℃~+150℃ | 450A | 650V | 26nF@25V | FS(Field Stop) | 1.95V@15V,400A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FD1000R33HL3KBPSA1 | Infineon Technologies | 11.5kW 1kA 3.3kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198636 | - | Bag-packed | - | 11.5kW | - | -40℃~+150℃ | 1kA | 3.3kV | 190nF@25V | FS(Field Stop) | 2.85V@15V,1000A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS10R12VT3BOMA1 | Infineon Technologies | 64W 16A 1.2kV IGBT Transistors / Modules ROHS | C3198640 | - | Bag-packed | - | 64W | - | -40℃~+125℃ | 16A | 1.2kV | 700pF@25V | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS75R12KE3GBOSA1 | Infineon Technologies | 355W 100A 1.2kV IGBT Transistors / Modules ROHS | C3198643 | - | Tray | - | 355W | - | -40℃~+125℃ | 100A | 1.2kV | 5.3nF@25V | - | 2.15V@15V,75A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ2400R12HE4B9HOSA2 | Infineon Technologies | 13.5kW 3.56kA 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198646 | - | Tray | - | 13.5kW | - | -40℃~+150℃ | 3.56kA | 1.2kV | 150nF@25V | FS(Field Stop) | 2.1V@15V,2400A | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FZ2400R12HE4B9HDSA2 | Infineon Technologies | 13.5kW 3.56kA 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198647 | - | Bag-packed | - | 13.5kW | - | -40℃~+150℃@(Tj) | 3.56kA | 1.2kV | 150nF@25V | FS(Field Stop) | 2.1V@15V,2.4kA | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | F3L300R12MT4PB23BPSA1 | Infineon Technologies | 20mW 300A 1.2kV FS(Field Stop) IGBT Transistors / Modules ROHS | C3198664 | - | Tray | - | 20mW | - | -40℃~+150℃@(Tj) | 300A | 1.2kV | 19nF@25V | FS(Field Stop) | 2.1V@15V,300A | - | - | - | - | - | - |