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Power Dissipation (Pd)
Total Gate Charge (Qg@Vgs)
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RoHS
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Packaging
Drain Source Voltage (Vdss)
Continuous Drain Current (Id)
Drain Source On Resistance (RDS(on)@Vgs,Id)
Power Dissipation (Pd)
Gate Threshold Voltage (Vgs(th)@Id)
Type
Input Capacitance (Ciss@Vds)
Total Gate Charge (Qg@Vgs)
Operating Temperature
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
LCSC Part#
Package
Packaging
Drain Source Voltage (Vdss)
Continuous Drain Current (Id)
Drain Source On Resistance (RDS(on)@Vgs,Id)
Power Dissipation (Pd)
Gate Threshold Voltage (Vgs(th)@Id)
Type
Input Capacitance (Ciss@Vds)
Total Gate Charge (Qg@Vgs)
Operating Temperature
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Mult: 1
0
3LN01SS-TL-ECatalyst Semiconductor Inc.
30V 150A 3.7Ω@80mA,4V 150mW N Channel 7000pF@10V 1.58nC@10V +150℃@(Tj) SC-81(SSFP) MOSFETs ROHS
C3289626SC-81(SSFP)Bag-packed30V150A3.7Ω@80mA,4V150mW-N Channel7000pF@10V1.58nC@10V+150℃@(Tj)
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