Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
750
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Configuration
Total Gate Charge
V(BR)DSS
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Vgs(th)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
750
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
|
Drain-Source On-State Resistance(15V)
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Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
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Drain-Source On-State Resistance(20V)
|
Vgs(th)
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Channel Type
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Drain Source Voltage
|
Drain Source Threshold Voltage
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Vgs(th)
|
Channel Type
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Drain Source Voltage
|
Drain Source Threshold Voltage
|
Output Capacitance
|
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| | Min: 1 Mult: 1 |
1532
(311+1221+0)In Stock | GC2M0080120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435046 | TO247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 80mΩ | 2.9V | 1 N-Channel | - | 192W | 36A | 1200V | 7.5pF | 1130pF | 71nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
873
(873+0+0)In Stock | CI7N170SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2842690 | TO-247-3 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 62W | 7A | 1700V | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
445
(0+445+0)In Stock  | IMW65R039M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278949 | TO-247-3-41 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 176W | 46A | - | - | - | - | - | 650V | - | - | ||
| | Min: 1 Mult: 1 |
426
(426+0+0)In Stock | S1M075120H2 | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363608 | TO-247-4L | Tube-packed | 75mΩ | -55℃~+175℃ | 60mΩ | - | - | - | 1 N-Channel | - | 224W | 44A | - | 3.8pF | 1037pF | 40nC | - | 1200V | 2.8V | - | ||
| | Min: 1 Mult: 1 |
418
(0+418+0)In Stock | NTH4L040N120M3S | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673849 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
373
(297+76+0)In Stock | GC2M1000170D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435057 | TO247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 0.8Ω | 2.8V | 1 N-Channel | Single Tube | 69W | 5A | 1700V | 2.2pF | 215pF | 22nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
371
(371+0+0)In Stock | CI60N120SM4 | Tokmas | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2980704 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | - | - | 45ｍΩ | 2.5V | 1 N-Channel | Single Tube | 330W | 60A | 1200V | 29pF | 3550pF | 160nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
357
(357+0+0)In Stock | CI90N120SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5364636 | TO-247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 27mΩ | 2.5V | 1 N-Channel | Single Tube | 463W | 90A | 1200V | 42.8pF | 4700pF | 164nC | - | - | - | 231pF | ||
| | Min: 1 Mult: 1 |
274
(0+274+0)In Stock | NVH4L040N120M3S | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673852 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
269
(269+0+0)In Stock | CI19N120SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2959833 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 165mΩ | 2.5V | 1 N-Channel | Single Tube | 125W | 19A | 1200V | 36pF | 950pF | 50nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
257
(0+257+0)In Stock | NTHL1000N170M1 | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673851 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
243
(243+0+0)In Stock | CI30N65SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3010930 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 65mΩ | 2.3V | 1 N-Channel | Single Tube | 171W | 30A | 650V | 77pF | 1700pF | 65nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
240
(240+0+0)In Stock | IMZA120R020M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7207676 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
237
(179+58+0)In Stock | GC3M0075120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435045 | TO247-3 | Tube-packed | 75mΩ | -40℃~+175℃ | - | - | - | 2.5V | 1 N-Channel | Single Tube | 136W | 32A | 1200V | 2pF | 1390pF | 54nC | - | - | - | 58pF | ||
| | Min: 1 Mult: 1 |
191
(191+0+0)In Stock | IMW120R030M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536280 | TO-247-3 | Tube-packed | 42mΩ | -55℃~+175℃ | 30mΩ | - | - | 4.5V | 1 N-Channel | Single Tube | 227W | 56A | 1200V | 13pF | 2120pF | 63nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
185
(185+0+0)In Stock | SCT3060ARC14 | ROHM Semicon | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5361257 | TO-247-4L | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 165W | 39A | 650V | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
167
(167+0+0)In Stock | C3M0075120K-A | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7429887 | TO-247-4L | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 136W | 32A | 1200V | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
165
(165+0+0)In Stock | CI40N65SM(TOKMAS) | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18214413 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
158
(156+2+0)In Stock | C3M0021120K | Wolfspeed | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713521 | TO-247-4 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 469W | 100A | 1200V | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
140
(37+103+0)In Stock | IV1Q12750T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979251 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 750mΩ | - | 1 N-Channel | Single Tube | 78.4W | 6.8A | - | 2.6pF | 260pF | 15.8nC | - | 1200V | 4.3V | - | ||
| | Min: 1 Mult: 1 |
136
(120+16+0)In Stock | S1M040120H | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363605 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | 32mΩ | - | - | 2.8V | 1 N-Channel | Single Tube | 357W | 76A | 1200V | 10pF | 2159pF | 76nC | - | - | - | 127pF | ||
| | Min: 1 Mult: 1 |
136
(106+30+0)In Stock | GC3M0060065K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435031 | TO-247-4 | Tube-packed | 60mΩ | -40℃~+175℃ | - | - | - | 2.3V | 1 N-Channel | Single Tube | 150W | 37A | 650V | 9pF | 1020pF | 46nC | - | - | - | 80pF | ||
| | Min: 1 Mult: 1 |
133
(22+111+0)In Stock | GC2M0045170D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435058 | TO247-3 | Tube-packed | - | -40℃~+150℃ | - | - | 45ｍΩ | 2.6V | 1 N-Channel | Single Tube | 520W | 72A | 1700V | 6.7pF | 3672pF | 188nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
129
(0+129+0)In Stock | SG1M160120J | Sichainsemi | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363612 | TO-263-7L | Tube-packed | 160mΩ | -55℃~+175℃ | - | - | - | - | 1 N-Channel | - | 120W | 21A | - | 1.4pF | 617pF | 25.4nC | - | 1200V | 2.8V | - | ||
| | Min: 1 Mult: 1 |
106
(82+24+0)In Stock | RSM1701K0W | REASUNOS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5371984 | TO-247-3 | Tube-packed | - | -40℃~+150℃ | - | - | 1000mΩ | - | 1 N-Channel | - | 69W | 5A | - | 1.6pF | 186pF | 21.8nC | - | 1700V | 3V | - |