An Overview of Gallium Nitride (GaN) Devices
Gallium nitride (GaN) is a very hard and stable semiconductor. Devices based on GaN outperform silicon-based devices with their higher breakdown strength, faster switching speed, higher thermal conductivity, and lower on-resistance. GaN crystals can be grown on various substrates, including sapphire, silicon carbide (SiC), and silicon (Si). By growing a GaN epi layer on top of silicon, the existing silicon manufacturing infrastructure can be used, eliminating the need for costly specialized production sites and leveraging readily available large-diameter silicon wafers at low cost.
The Advantages of Gallium Nitride (GaN) Devices
- Quick switching speeds: less losses in switching
- Lower on-resistance: less loss in resistance and higher efficiency
- Lighter weight: less space and volume on PCB (printed circuit board)
- Less cost: lower overall system and operational expenses
Why Gallium Nitride (GaN) Devices is better than Sillicon-based Device?
In terms of transistors, a fast-switching tiny electronic device, that allows it to open and close at a very fast speed. Gallium nitride (GaN) devices like transistors are smaller than silicon-based transistors. They can generate more power and switch four times faster than silicon transistors with over 95% higher power efficiency.
What is the LCSC Category of Gallium Nitride (GaN) Devices?
GaN Transistors(GaN HEMT)