Results:
1
Package
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Operating Temperature
Type
Turn?on Delay Time (Td(on))
Total Gate Charge (Qg@Ic,Vge)
Power Dissipation (Pd)
Collector Current (Ic)
Diode Reverse Recovery Time (Trr)
Turn?on Switching Loss (Eon)
Turn?off Delay Time (Td(off))
Turn?off Switching Loss (Eoff)
Collector-Emitter Breakdown Voltage (Vces)
Results:
1
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Turn?off Delay Time (Td(off))
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Power Dissipation (Pd)
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Turn?on Delay Time (Td(on))
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Operating Temperature
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Collector Current (Ic)
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Collector-Emitter Breakdown Voltage (Vces)
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Input Capacitance (Cies@Vce)
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Type
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Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Turn?off Delay Time (Td(off))
|
Power Dissipation (Pd)
|
Turn?on Delay Time (Td(on))
|
Operating Temperature
|
Collector Current (Ic)
|
Collector-Emitter Breakdown Voltage (Vces)
|
Input Capacitance (Cies@Vce)
|
Type
|
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
|
Total Gate Charge (Qg@Ic,Vge)
|
Diode Reverse Recovery Time (Trr)
|
Turn?off Switching Loss (Eoff)
|
Turn?on Switching Loss (Eon)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Min: 1 Mult: 1 | 0 | WG50N65DHWQ | WeEn Semiconductors | 278W 91A 650V FS(Field Stop) TO-247-3 IGBTs ROHS | C3193695 | TO-247-3 | Tube-packed | 163ns | 278W | 66ns | -55℃~+150℃@(Tj) | 91A | 650V | - | FS(Field Stop) | 2V@15V,50A | 160nC | 105ns | 0.6mJ | 1.7mJ |
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