Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Channel Type
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Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Channel Type
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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Min: 1 Mult: 1 |
2199
(0+621+1578)In Stock | GC2M0080120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435046 | TO247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 80mΩ | 2.9V | 1 N-Channel | - | 192W | 36A | 1200V | 7.5pF | 1130pF | 71nC | - | - | |||
Min: 1 Mult: 1 |
800
(0+800+0)In Stock | CI7N170SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2842690 | TO-247-3 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 62W | 7A | 1700V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
635
(0+401+234)In Stock | GC2M1000170D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435057 | TO247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 0.8Ω | 2.8V | 1 N-Channel | Single tube | 69W | 5A | 1700V | 2.2pF | 215pF | 22nC | - | - | |||
Min: 1 Mult: 1 |
478
(0+478+0)In Stock | CI60N120SM4 | Tokmas | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2980704 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | - | - | 45ｍΩ | 2.5V | 1 N-Channel | Single tube | 330W | 60A | 1200V | 29pF | 3550pF | 160nC | - | - | |||
Min: 1 Mult: 1 |
453
(0+449+4)In Stock  | C3M0021120K | Wolfspeed | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713521 | TO-247-4 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 469W | 100A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
445
(0+0+445)In Stock | IMW65R039M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278949 | TO-247-3-41 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 176W | 46A | 650V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
301
(0+300+1)In Stock | SCT3120ALGC11 | ROHM Semicon | TO-247AC-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C191056 | TO-247AC-3 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 103W | 21A | 650V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
297
(0+209+88)In Stock | GC3M0075120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435045 | TO247-3 | Tube-packed | 75mΩ | -40℃~+175℃ | - | - | - | 2.5V | 1 N-Channel | Single tube | 136W | 32A | 1200V | 2pF | 1390pF | 54nC | - | 58pF | |||
Min: 1 Mult: 1 |
266
(0+266+0)In Stock | C3M0075120K-A | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7429887 | TO-247-4L | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 136W | 32A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
240
(0+240+0)In Stock | SCT3060ARC14 | ROHM Semicon | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5361257 | TO-247-4L | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 165W | 39A | 650V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
230
(0+230+0)In Stock | CI30N65SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3010930 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 65mΩ | 2.3V | 1 N-Channel | Single tube | 171W | 30A | 650V | 77pF | 1700pF | 65nC | - | - | |||
Min: 1 Mult: 1 |
223
(0+125+98)In Stock | C3M0040120K | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5588747 | TO-247-4L | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 326W | 66A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
222
(0+107+115)In Stock | IMW120R060M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536281 | TO-247-3 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 150W | 36A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
213
(0+213+0)In Stock | CI90N120SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5364636 | TO-247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 27mΩ | 2.5V | 1 N-Channel | Single tube | 463W | 90A | 1200V | 42.8pF | 4700pF | 164nC | - | 231pF | |||
Min: 1 Mult: 1 |
205
(0+205+0)In Stock | IMZ120R060M1H | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536292 | TO-247-4 | Tube-packed | - | - | - | - | - | - | 1 N-Channel | - | 150W | 36A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
197
(0+197+0)In Stock | CI19N120SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2959833 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 165mΩ | 2.5V | 1 N-Channel | Single tube | 125W | 19A | 1200V | 36pF | 950pF | 50nC | - | - | |||
Min: 1 Mult: 1 |
182
(0+111+71)In Stock | GC2M0160120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435048 | TO-247-3 | Tube-packed | - | - | - | - | 160mΩ | 2.9V | 1 N-Channel | Single tube | 125W | 18A | 1200V | 5pF | 606pF | 40nC | - | - | |||
Min: 1 Mult: 1 |
165
(0+165+0)In Stock | IMW120R030M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536280 | TO-247-3 | Tube-packed | 42mΩ | -55℃~+175℃ | 30mΩ | - | - | 4.5V | 1 N-Channel | Single tube | 227W | 56A | 1200V | 13pF | 2120pF | 63nC | - | - | |||
Min: 1 Mult: 1 |
158
(0+150+8)In Stock | S1M014120H | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363603 | TO-247-4L | Tube-packed | 17mΩ | -55℃~+175℃ | 14mΩ | - | - | 2.8V | 1 N-Channel | Single tube | 625W | 152A | 1200V | 7.5pF | 5469pF | 230nC | - | 235pF | |||
Min: 1 Mult: 1 |
158
(0+0+158)In Stock | S1M040120H | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363605 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | 32mΩ | - | - | 2.8V | 1 N-Channel | Single tube | 357W | 76A | 1200V | 10pF | 2159pF | 76nC | - | 127pF | |||
Min: 1 Mult: 1 |
154
(0+84+70)In Stock | GC2M0040120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435044 | TO-247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 80mΩ | 3.2V | 1 N-Channel | Single tube | 278W | 55A | 1200V | 11pF | 2440pF | 120nC | - | 171pF | |||
Min: 1 Mult: 1 |
153
(0+39+114)In Stock | GC3M0032120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435053 | TO-247-4 | Tube-packed | 32mΩ | -40℃~+175℃ | - | - | - | 2.5V | 1 N-Channel | Single tube | 283W | 63A | 1200V | 8pF | 3357pF | 118nC | - | 129pF | |||
Min: 1 Mult: 1 |
152
(0+32+120)In Stock | GC2M0045170D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435058 | TO247-3 | Tube-packed | - | -40℃~+150℃ | - | - | 45ｍΩ | 2.6V | 1 N-Channel | Single tube | 520W | 72A | 1700V | 6.7pF | 3672pF | 188nC | - | - | |||
Min: 1 Mult: 1 |
150
(0+0+150)In Stock | SG1M160120J | Sichainsemi | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363612 | TO-263-7L | Tube-packed | 160mΩ | -55℃~+175℃ | - | - | - | 2.8V | 1 N-Channel | - | 120W | 21A | 1200V | 1.4pF | 617pF | 25.4nC | - | - | |||
Min: 1 Mult: 1 |
150
(0+0+150)In Stock | NTHL1000N170M1 | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673851 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |