Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
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Drain Source Voltage
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Min: 1 Mult: 1 | 0 | MSC360SMA120S | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3282314 | - | Tube-packed | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC025SMA120B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290712 | TO-247-3 | Tube-packed | 1 N-Channel | 500W | 103A | 1200V | |||
Min: 1 Mult: 1 | 0 | G3R450MT17D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290715 | TO-247-3 | Tube-packed | 1 N-Channel | 88W | 9A | 1700V | |||
Min: 1 Mult: 1 | 0 | MSC035SMA070B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290728 | TO-247-3 | Tube-packed | 1 N-Channel | 283W | 77A | 700V | |||
Min: 1 Mult: 1 | 0 | G3R20MT12K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290744 | TO-247-4 | Tube-packed | 1 N-Channel | 542W | 128A | 1200V | |||
Min: 1 Mult: 1 | 0 | G3R40MT12K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290745 | TO-247-4 | Tube-packed | 1 N-Channel | 333W | 71A | 1200V | |||
Min: 1 Mult: 1 | 0  | MSC025SMA120B4 | Microchip Tech | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290749 | TO-247-4 | Tube-packed | 1 N-Channel | 500W | 103A | 1200V | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG65R163M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3283198 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 85W | 17A | 650V | |||
Min: 1 Mult: 1 | 0 | G3R75MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291154 | TO-263-7 | Tube-packed | 1 N-Channel | 224W | 42A | 1200V | |||
Min: 1 Mult: 1 | 0 | NVH4L015N065SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281111 | TO-247-4L | Tray | 1 N-Channel | 500W | 142A | 650V | |||
Min: 1 Mult: 1 | 0 | G3R40MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291159 | TO-263-7 | Tube-packed | 1 N-Channel | 374W | 75A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSC035SMA170B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281077 | TO-247-3 | Tube-packed | 1 N-Channel | 370W | 68A | 1700V | |||
Min: 1 Mult: 1 | 0 | G3R160MT17J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291151 | TO-263-7 | Tube-packed | 1 N-Channel | 187W | 22A | 1700V | |||
Min: 1 Mult: 1 | 0 | UF4SC120023K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6343383 | - | Tube-packed | 1 N-Channel | 385W | 53A | 1200V | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ4C075060B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6343455 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 128W | 25.8A | 750V | |||
Min: 1 Mult: 1 | 0 | G3R12MT12K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6048360 | TO-247-4 | Tube-packed | 1 N-Channel | 567W | 157A | 1200V | |||
Min: 1 Mult: 1 | 0 | UF3SC065007K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6006288 | - | Tube-packed | 1 N-Channel | 789W | 120A | 650V | |||
Min: 1 Mult: 1 | 0 | UF4C120053K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6006292 | - | Tube-packed | 1 N-Channel | 263W | 34A | 1200V | |||
Min: 1 Mult: 1 | 0 | UJ3C065030T3S | Qorvo | TO-220-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6582084 | TO-220-3 | Tube-packed | 1 N-Channel | 441W | 85A | 650V | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ4SC075011B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6582091 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 357W | 104A | 750V | |||
Min: 1 Mult: 1 | 0 | UF3C120040K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6731509 | TO-247-3 | Tube-packed | 1 N-Channel | 429W | 65A | 1200V | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UF3C065030B3 | Qorvo | TO-263(D2PAK) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6581984 | TO-263(D2PAK) | Tape & Reel (TR) | 1 N-Channel | 242W | 65A | 650V | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | C3M0065090J-TR | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5567649 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 113W | 35A | 900V | |||
Min: 1 Mult: 1 | 0 | C3M0065100J | Wolfspeed | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5611625 | D2PAK-7 | Tube-packed | 1 N-Channel | 113.5W | 35A | 1000V | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ4C075023B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5814998 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 278W | 64A | 750V |