Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
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Pricing
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Images
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Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Min: 1 Mult: 1 | 0  | MSC035SMA170B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281077 | TO-247-3 | Tube-packed | 1 N-Channel | 370W | 68A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | G3R45MT17K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281100 | TO-247-4 | Tube-packed | 1 N-Channel | 438W | 61A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | NVH4L015N065SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281111 | TO-247-4L | Tray | 1 N-Channel | 500W | 142A | 650V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170DUM058AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3276352 | - | Bag-packed | 2 N-Channel | 1642W | 353A | 1700V | Common Source | |||
Min: 1 Mult: 1 | 0 | MSC035SMA170S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277668 | D3PAK | Bag-packed | 1 N-Channel | 278W | 59A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | FF6MR12W2M1B11BOMA1 | Infineon Technologies | AG-EASY2BM-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3288032 | AG-EASY2BM-2 | Tray | 2 N-Channel | - | 200A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | IMZ120R350M1HXKSA1 | Infineon Technologies | TO-247-4-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278961 | TO-247-4-1 | Tube-packed | 1 N-Channel | 60W | 4.7A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM31C3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290157 | SP3F | Bag-packed | 4 N-channel | 395W | 89A | 1200V | Three-Phase Bridge | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM025CT6AG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290162 | SP6 | Tube-packed | - | - | 538A | 700V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120TAM11CTPAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290168 | SP6 | Tube-packed | 6 N-Channel | 1.042kW | 251A | 1200V | Three-Phase Bridge | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG65R163M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3283198 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 85W | 17A | 650V | - | |||
Min: 1 Mult: 1 | 0 | C3M0021120D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5588723 | TO-247-3 | Tube-packed | 1 N-Channel | 469W | 100A | 1200V | - | |||
Min: 1 Mult: 1
Full Reel: 1
| 0 | SCT055HU65G3AG | STMicroelectronics | HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5268810 | HU3PAK | Tape & Reel (TR) | - | 185W | 30A | - | - | |||
Min: 1 Mult: 1 | 0 | MSC360SMA120S | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3282314 | - | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | GA10JT12-263 | GeneSiC Semiconductor | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3282332 | - | Tube-packed | - | 170W | 25A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | SCT2280KEC | ROHM Semicon | TO-247AC-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C191061 | TO-247AC-3 | Tube-packed | 1 N-Channel | 108W | 14A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | SCT20N120 | STMicroelectronics | HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C127907 | HiP-247 | Tube-packed | 1 N-Channel | 175W | 20A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | UJ4SC075006K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6903072 | - | Tube-packed | 1 N-Channel | 714W | 120A | 750V | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UF3C120080B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7407073 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 190W | 28.8A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | C3M0120100K | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7453724 | TO-247-4L | Tube-packed | 1 N-Channel | 83W | 22A | 1000V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM31T1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17311871 | - | Bag-packed | 2 N-Channel | 395W | 89A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM042CT6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17237065 | - | Tube-packed | 2 N-Channel | 2.031kW | 495A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM042D3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17316946 | - | Bag-packed | 2 N-Channel | 2.031kW | 495A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | DMWSH120H28SM4Q | Diodes Incorporated | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19950048 | TO-247-4 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM025T6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17570730 | - | Bag-packed | 2 N-Channel | 1.882kW | 689A | 700V | - |