Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
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Drain-Source On-State Resistance(10V)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Configuration
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
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Min: 1 Mult: 1 | 0  | IMW120R040M1HXKSA1 | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6061982 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZA120R014M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7288888 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170TAM45CT3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17487944 | - | Bag-packed | 6 N-Channel | 319W | 64A | 1700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM16CT1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17681392 | - | Tube-packed | 2 N-Channel | 745W | 173A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | S2M0016120D | SMC(Sangdest Microelectronicstronic (Nanjing)) | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18212966 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120DDUM31TBL2NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17439276 | - | Bag-packed | 4 N-channel | 310W | 79A | 1200V | Common Source | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120HM16T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17632004 | - | Bag-packed | 4 N-channel | 745W | 173A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM042D3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17316946 | - | Bag-packed | 2 N-Channel | 2.031kW | 495A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM025T6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17570730 | - | Bag-packed | 2 N-Channel | 1.882kW | 689A | 700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | S2M0040120J-1 | SMC(Sangdest Microelectronicstronic (Nanjing)) | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18212972 | TO-263-7 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM042CT6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17237065 | - | Tube-packed | 2 N-Channel | 2.031kW | 495A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM058CT6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17528796 | - | Tube-packed | 2 N-Channel | 1.642kW | 353A | 1700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM025D3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17519520 | - | Bag-packed | 2 N-Channel | 1.882kW | 689A | 700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | APTM100A13SCG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17636088 | - | Bag-packed | 2 N-Channel | 1250W | 65A | 1000V | Half Bridge | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | DMWSH120H28SM4Q | Diodes Incorporated | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19950048 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FS55MR12W1M1HB11NPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17644060 | - | Tray | 6 N-Channel | - | 15A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM027D3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17539261 | - | Bag-packed | 2 N-Channel | 2.97kW | 733A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | C3M0040120J1 | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7455473 | TO-263-7 | Tube-packed | 1 N-Channel | 272W | 64A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC080SMA120J | Microchip Tech | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6916594 | SOT-227 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZA65R030M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289092 | TO-247-4 | Tube-packed | 1 N-Channel | 197W | 53A | 650V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SCTWA40N120G2V-4 | STMicroelectronics | HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5268807 | HiP-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZ120R090M1HXKSA1 | Infineon Technologies | TO-247-4-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6061984 | TO-247-4-1 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZA120R007M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6061986 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | C3M0280090J | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5693029 | TO-263-7 | Tube-packed | 1 N-Channel | 50W | 11A | 900V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IV1Q06040T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979248 | TO-247-3 | Tube-packed | 1 N-Channel | 348W | 72A | 650V | - | - | -55℃~+175℃ | - | 40mΩ | 3.2V | Single tube | 10.8pF | 179pF | 110.8nC | - |