Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
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Drain-Source On-State Resistance(10V)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
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Min: 1 Mult: 1 | 0  | IMZA120R007M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6061986 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | C3M0280090J | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5693029 | TO-263-7 | Tube-packed | 1 N-Channel | 50W | 11A | 900V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IV1Q06040T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979248 | TO-247-3 | Tube-packed | 1 N-Channel | 348W | 72A | 650V | - | -55℃~+175℃ | - | - | 40mΩ | 3.2V | Single tube | 10.8pF | 179pF | 110.8nC | - | |||
Min: 1 Mult: 1 | 0 | SCT1000N170 | STMicroelectronics | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2970166 | TO-247-3 | Tube-packed | 1 N-Channel | 96W | 7A | 1700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | C3M0015065D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713520 | TO-247-3 | Tube-packed | 1 N-Channel | 416W | 120A | 650V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZ120R220M1H | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536295 | TO-247-4 | Tube-packed | 1 N-Channel | 75W | 13A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG120R060M1HXTMA1 | Infineon Technologies | TO-263-7-12 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3279261 | TO-263-7-12 | Tape & Reel (TR) | 1 N-Channel | 181W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | ASXM028120P | AnBon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C29118251 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120DDUM31CTBL2NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17368767 | - | Bag-packed | 4 N-channel | 310W | 79A | 1200V | - | - | - | Common Source | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | C3M0045065K | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7457638 | TO-247-4L | Tube-packed | 1 N-Channel | 176W | 49A | 650V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ3C120070K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7407137 | TO-247-3 | Tube-packed | 1 N-Channel | 254.2W | 34.5A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120VR1M31C1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17531972 | - | Bag-packed | 2 N-Channel | 395W | 89A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | GCMS040B120S1-E1 | SemiQ | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19941442 | SOT-227 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG65R107M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3276086 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 110W | 24A | 650V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC017SMA120B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3276050 | TO-247-3 | Bag-packed | 1 N-Channel | 455W | 113A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170DUM039AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3276056 | - | Bag-packed | 2 N-Channel | 2400W | 523A | 1700V | - | - | - | Common Source | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | CMS120N080WK | Bruckewell | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C29781282 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZA120R040M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5771896 | TO-247-4 | Tube-packed | 1 N-Channel | 227W | 55A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120VR1M16CTPAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17480161 | - | Bag-packed | 6 N-Channel | 728W | 171A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170TAM23CTPAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17524288 | - | Bag-packed | 6 N-Channel | 588W | 122A | 1700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM025T6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17637534 | - | Bag-packed | 2 N-Channel | 1.882kW | 689A | 700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70HM05AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17673751 | - | Bag-packed | 4 N-channel | 966W | 349A | 700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM042T6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17660428 | - | Bag-packed | 2 N-Channel | 2.031kW | 495A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120VR1M11CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17630977 | - | Bag-packed | 2 N-Channel | 1.042kW | 251A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70TAM19T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17573441 | - | Bag-packed | 6 N-Channel | 365W | 124A | 700V | - | - | - | - | - | - | - | - | - | - | - |