Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Configuration
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Channel Type
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Continuous Drain Current
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Drain Source Voltage
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Power Dissipation
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
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Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
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Drain-Source On-State Resistance(10V)
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Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Configuration
|
Channel Type
|
Continuous Drain Current
|
Drain Source Voltage
|
Power Dissipation
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
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Min: 1 Mult: 1 | 0 | MCB40P1200LB-TUB | Littelfuse/IXYS | SMD-28P Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17613603 | SMD-28P | Tube-packed | Common Source | 2 N-Channel | 58A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | CXT-PLA3SA12450AA | CISSOID | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17662937 | - | Tray | - | 6 N-Channel | 450A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM08T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17672676 | - | Bag-packed | - | 2 N-Channel | 337A | 1200V | 1.409kW | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MDDG1C120R080K3 | MDD(Microdiode Semiconductor) | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22370504 | TO-247-3L | Tube-packed | - | 1 N-Channel | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MDDG2C065R060K3 | MDD(Microdiode Semiconductor) | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22370505 | TO-247-3L | Tube-packed | - | 1 N-Channel | 29A | 650V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MDDG2C120R016K3 | MDD(Microdiode Semiconductor) | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22370506 | TO-247-3L | Tube-packed | - | 1 N-Channel | 115A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD206525NCFGH | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605627 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70VR1M10CTPAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296371 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70VR1M19C1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296372 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212080NCFG1 | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605688 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM042CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17595295 | - | Tube-packed | - | 2 N-Channel | 495A | 1200V | 2.031kW | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212025NCTGH | Yangzhou Yangjie Elec Tech | TO247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605661 | TO247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZA120R030M1HXKSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20191549 | - | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0  | FF45MR12W1M1B11BOMA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17686110 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IV1Q12017T4G | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979247 | TO-247-4 | Tube-packed | - | - | - | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMZ120R220M1HXKSA1 | Infineon Technologies | TO-247-4-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6276629 | TO-247-4-1 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC750SMA170S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5785581 | D3PAK | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM19T1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7235420 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM11T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7307543 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R75MT12D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5748097 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF2MR12KM1PHOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277322 | AG-62mm | Tray | Half Bridge | 2 N-Channel | 500A | 1200V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SCTWA60N120G2-4 | STMicroelectronics | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281096 | TO-247-4 | Tube-packed | - | 1 N-Channel | 60A | 1200V | 388W | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | C3M0045065D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713515 | TO-247-3 | Tube-packed | - | 1 N-Channel | 49A | 650V | 176W | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70VR1M07CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17262572 | - | Bag-packed | - | 2 N-Channel | 349A | 700V | 966W | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM029CT6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17315662 | - | Bag-packed | - | 2 N-Channel | 676A | 1700V | 3kW | - | - | - | - | - | - | - | - | - | - |