Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Drain Source Threshold Voltage
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Reverse Transfer Capacitance
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Input Capacitance
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Total Gate Charge
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Encapsulated Type
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Drain-Source On-State Resistance(10V)
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Output Capacitance
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|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Drain Source Threshold Voltage
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Encapsulated Type
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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Min: 1 Mult: 1 |
130
(0+0+130)In Stock | S1M032120H | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363604 | TO-247-4L | Tube-packed | 1 N-Channel | 2.8V | 375W | 87A | 1200V | 8.8pF | 2700pF | 96nC | 32mΩ | -55℃~+175℃ | 27mΩ | - | - | - | - | - | |||
Min: 1 Mult: 1 |
128
(0+28+100)In Stock | HC2M1000170D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723852 | TO-247-3L | Tube-packed | - | - | 69W | 5A | 1700V | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
127
(0+80+47)In Stock | GC3M0021120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435052 | TO-247-4 | Tube-packed | 1 N-Channel | 2.5V | 469W | 100A | 1200V | 12pF | 4818pF | 162nC | 21mΩ | -40℃~+175℃ | - | - | - | Single tube | - | 180pF | |||
Min: 1 Mult: 1 |
126
(0+112+14)In Stock | GC3M0032120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435042 | TO-247-3 | Tube-packed | 1 N-Channel | 2.5V | 283W | 63A | 1200V | 8pF | 3357pF | 114nC | 32mΩ | -40℃~+175℃ | - | - | - | Single tube | - | 129pF | |||
Min: 1 Mult: 1 |
125
(0+54+71)In Stock | GC2M0160120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435048 | TO-247-3 | Tube-packed | 1 N-Channel | 2.9V | 125W | 18A | 1200V | 5pF | 606pF | 40nC | - | - | - | - | 160mΩ | Single tube | - | - | |||
Min: 1 Mult: 1 |
125
(0+0+125)In Stock | GC3M0040120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435043 | TO-247-3 | Tube-packed | 1 N-Channel | 2.7V | 326W | 66A | 1200V | 5pF | 2900pF | 101nC | 40mΩ | -40℃~+175℃ | - | - | - | Single tube | - | 103pF | |||
Min: 1 Mult: 1 |
120
(0+0+120)In Stock  | NTHL1000N170M1 | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673851 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
109
(0+83+26)In Stock | RSM1701K0W | REASUNOS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5371984 | TO-247-3 | Tube-packed | 1 N-Channel | 3V | 69W | 5A | 1700V | 1.6pF | 186pF | 21.8nC | - | -40℃~+150℃ | - | - | 1000mΩ | - | - | - | |||
Min: 1 Mult: 1 |
108
(0+0+108)In Stock | GC3M0040120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435054 | TO-247-4 | Tube-packed | 1 N-Channel | 2.7V | 326W | 66A | 1200V | 5pF | 2900pF | 164nC | 40mΩ | -40℃~+175℃ | - | - | - | Single tube | - | 103pF | |||
Min: 1 Mult: 1
Full Reel: 1000
|
106
(0+104+2)In Stock | IMBF170R1K0M1XTMA1 | Infineon Technologies | TO-263-7-13 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3279264 | TO-263-7-13 | Tape & Reel (TR) | 1 N-Channel | 4.5V | 68W | 5.2A | 1700V | 0.7pF | 275pF | 5nC | 809mΩ | -55℃~+175℃ | - | - | - | Single tube | - | - | |||
Min: 1 Mult: 1 |
103
(0+103+0)In Stock | GC2M0280120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435049 | TO247-3 | Tube-packed | 1 N-Channel | 3.1V | 69.4W | 11A | 1200V | 4pF | 267pF | 19nC | - | -55℃~+150℃ | - | - | 320mΩ | Single tube | - | 31pF | |||
Min: 1 Mult: 1 |
100
(0+0+100)In Stock | ADP120N080G2 | ANHI | TO-220 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22470090 | TO-220 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 2000
|
100
(0+0+100)In Stock | ADR065N028AH | ANHI | TOLL Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22470093 | TOLL | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
100
(0+0+100)In Stock | NVH4L070N120M3S | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20625010 | TO-247-4 | Tube-packed | 1 N-Channel | - | 160W | 34A | 1200V | 5pF | 1230pF | 57nC | - | -55℃~+175℃ | 35mΩ | - | - | Single tube | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
|
98
(0+98+0)In Stock | NTBG040N120M3S | onsemi | D2PAK7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20539235 | D2PAK7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
98
(0+98+0)In Stock | GC3M0280090D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435036 | TO247-3 | Tube-packed | 1 N-Channel | 2.7V | 45W | 10.2A | 900V | 3pF | 204pF | 9.7nC | 320mΩ | -55℃~+150℃ | - | - | - | Single tube | - | 26pF | |||
Min: 1 Mult: 1 |
97
(0+49+48)In Stock | S1M075120J2 | Sichainsemi | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363611 | TO-263-7L | Tube-packed | 1 N-Channel | 2.8V | 169W | 39A | 1200V | 4.3pF | 1020pF | 40nC | 75mΩ | -55℃~+175℃ | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
97
(0+30+67)In Stock | GC2M0025120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435041 | TO-247-3 | Tube-packed | 1 N-Channel | 2.6V | 378W | 90A | 1200V | 9pF | 3140pF | 194nC | - | -55℃~+150℃ | - | - | 25mΩ | - | - | 224pF | |||
Min: 1 Mult: 1 |
96
(0+0+96)In Stock | NTH4L070N120M3S | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673850 | TO-247-4L | Tube-packed | 1 N-Channel | 2.9V | 80W | 34A | 1200V | 5pF | 1230pF | 57nC | - | -55℃~+175℃ | 65mΩ | - | - | Single tube | - | - | |||
Min: 1 Mult: 1 |
95
(0+0+95)In Stock | KN3M65017D | KNSCHA | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7432998 | TO-247-3 | Tube-packed | 1 N-Channel | 2.6V | 62W | 7A | 1700V | 1.8pF | 194pF | 23nC | - | -55℃~+150℃ | - | - | 650mΩ | Single tube | - | - | |||
Min: 1 Mult: 1 |
90
(0+0+90)In Stock | SP50N120CTK | Siliup | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466829 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
90
(0+0+90)In Stock | SP90N120CTK | Siliup | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466827 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
90
(0+0+90)In Stock | SP50N120CTF | Siliup | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466828 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
90
(0+0+90)In Stock | SP25N120CTK | Siliup | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466831 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
90
(0+0+90)In Stock | SP35N120CTF | Siliup | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466830 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |