Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
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Pricing
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Images
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Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
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Drain Source Voltage
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Configuration
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Min: 1 Mult: 1 | 0 | C2M0040120D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5586938 | TO-247-3 | Tube-packed | 1 N-Channel | 330W | 60A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | KXMW120R80T3 | Power X | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20607110 | TO-247-3L | Tube-packed | 1 N-Channel | 251W | 49A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | S1P05R120HBB | Sichainsemi | Plugin,62.8x56.8mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C37636038 | Plugin,62.8x56.8mm | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70DUM017AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3276392 | - | Bag-packed | 2 N-Channel | 2750W | 1021A | 700V | Common Source | |||
Min: 1 Mult: 1 | 0 | MSC750SMA170B4 | Microchip Tech | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281102 | TO-247-4 | Tube-packed | 1 N-Channel | 68W | 7A | 1700V | - | |||
Min: 1 Mult: 1 | 0  | NVH4L018N075SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281110 | TO-247-4L | Tube-packed | 1 N-Channel | 500W | 140A | 750V | - | |||
Min: 1 Mult: 1 | 0 | LSIC1MO120G0120 | Littelfuse | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281112 | TO-247-4L | Tube-packed | 1 N-Channel | 156W | 27A | 1200V | - | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG65R030M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3283224 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 234W | 63A | 650V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120DUM042AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3283293 | - | Bag-packed | 2 N-Channel | 2031W | 495A | 1200V | Common Source | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG65R039M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3283308 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 211W | 54A | 650V | - | |||
Min: 1 Mult: 1 | 0 | C3M0025065J1 | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7459207 | TO-263-7 | Tube-packed | 1 N-Channel | 271W | 80A | 650V | - | |||
Min: 1 Mult: 1
Full Reel: 2000
| 0 | C3M0045065L-TR | Wolfspeed | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7453707 | - | Tape & Reel (TR) | 1 N-Channel | 164W | 49A | 650V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170TAM15CTPAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17420574 | - | Bag-packed | 6 N-Channel | 843W | 179A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | DF23MR12W1M1B11BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17358904 | - | Tray | 2 N-Channel | - | 25A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM11CT3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17359853 | - | Bag-packed | 2 N-Channel | 1.14kW | 240A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM039CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17427285 | - | Bag-packed | 2 N-Channel | 2.4kW | 523A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | PAA12400BM3 | PN Junction Semiconductor | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17638836 | - | Tray | 2 N-Channel | - | 350A | 1200V | Half Bridge | |||
Min: 1 Mult: 1 | 0 | FF2MR12KM1HOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17620139 | AG-62mm | Tray | 2 N-Channel | - | 500A | 1200V | Half Bridge | |||
Min: 1 Mult: 1 | 0 | FS45MR12W1M1B11BOMA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17443857 | - | Tray | 6 N-Channel | - | 25A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | FF08MR12W1MA1B11ABPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17219455 | - | Tray | 2 N-Channel | - | 150A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120HM083AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17541623 | - | Bag-packed | 4 N-channel | 1.042kW | 251A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | FF6MR12KM1BOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17487643 | AG-62mm | Tray | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF23MR12W1M1B11BOMA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17383360 | - | Tray | 2 N-Channel | - | 50A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM03T6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17582417 | - | Bag-packed | 2 N-Channel | 3.215kW | 805A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120HM063AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17556666 | - | Bag-packed | 4 N-channel | 873W | 333A | 1200V | - |