Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
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Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
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Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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Min: 1 Mult: 1 | 0 | DF23MR12W1M1B11BOMA1244 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3276724 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMW120R045M1XKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278953 | TO-247-3-41 | Tube-packed | 1 N-Channel | 228W | 52A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R60MT07J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291146 | TO-263-7 | Tube-packed | - | - | - | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G2R120MT33J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291148 | TO-263-7 | Tube-packed | 1 N-Channel | - | 35A | 3300V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G2R1000MT17J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291152 | TO-263-7 | Tube-packed | 1 N-Channel | 54W | 5A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R60MT07D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281046 | TO-247-3 | Tube-packed | - | - | - | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SCTW40N120G2V | STMicroelectronics | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281060 | TO-247-3 | Tube-packed | 1 N-Channel | 278W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R160MT12D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281065 | TO-247-3 | Tube-packed | 1 N-Channel | 123W | 22A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G2R1000MT33J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291150 | TO-263-7 | Tube-packed | 1 N-Channel | 74W | 5A | 3300V | - | -55℃~+175℃ | - | - | 1000mΩ | 3.5V | Single tube | 2.4pF | 238pF | 18nC | - | 10pF | |||
Min: 1 Mult: 1 | 0 | G3R450MT17J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291155 | TO-263-7 | Tube-packed | 1 N-Channel | 91W | 9A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R30MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291163 | TO-263-7 | Tube-packed | 1 N-Channel | 459W | 96A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SCTWA35N65G2VAG | STMicroelectronics | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281012 | TO-247 | Tube-packed | 1 N-Channel | 208W | 45A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC750SMA170B4 | Microchip Tech | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281102 | TO-247-4 | Tube-packed | 1 N-Channel | 68W | 7A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0  | NVH4L018N075SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281110 | TO-247-4L | Tube-packed | 1 N-Channel | 500W | 140A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | LSIC1MO120G0120 | Littelfuse | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281112 | TO-247-4L | Tube-packed | 1 N-Channel | 156W | 27A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC017SMA120B4 | Microchip Tech | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277251 | TO-247-4 | Bag-packed | 1 N-Channel | 455W | 113A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FS03MR12A6MA1BBPSA1 | Infineon Technologies | AG-HYBRIDD-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277331 | AG-HYBRIDD-2 | Tray | 6 N-Channel | - | 400A | 1200V | - | - | - | Three-Phase Bridge | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UF3C065080B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136716 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 136.4W | 27A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ4C075018K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136811 | TO-247-3 | Tube-packed | 1 N-Channel | 385W | 81A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UF3C120150K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136718 | - | Tube-packed | 1 N-Channel | 166.7W | 18.4A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UF4SC120030K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136722 | - | Tube-packed | 1 N-Channel | 341W | 53A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ4C075018K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136813 | - | Tube-packed | 1 N-Channel | 385W | 81A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ4C075044K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6903068 | TO-247-3 | Tube-packed | 1 N-Channel | 203W | 37.4A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UF3C170400K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6902874 | TO-247-3 | Tube-packed | 1 N-Channel | 100W | 7.6A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ3C065080B3 | Qorvo | TO-263(D2PAK) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6731594 | TO-263(D2PAK) | Tape & Reel (TR) | 1 N-Channel | 115W | 25A | 650V | - | - | - | - | - | - | - | - | - | - | - | - |