Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
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Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
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Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Configuration
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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Min: 1 Mult: 1 | 0 | G3R350MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6203464 | TO-263-7 | Tube-packed | 1 N-Channel | 75W | 11A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD206525NCTGH | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605629 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212025NCFGH | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605660 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212060NCFGH | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605684 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212060NCTGH | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605686 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC70SM120JCU2 | Microchip Tech | SOT-227(ISOT-OP) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289952 | SOT-227(ISOT-OP) | Tube-packed | 1 N-Channel | 395W | 89A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0  | MSC40SM120JCU3 | Microchip Tech | SOT-227(ISOT-OP) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289953 | SOT-227(ISOT-OP) | Tube-packed | 1 N-Channel | 245W | 55A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | NVH4L045N065SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290750 | TO-247-4L | Tube-packed | 1 N-Channel | 187W | 55A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM07CT3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280299 | SP3F | Tube-packed | 2 N-Channel | 988W | 353A | 700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70TAM19CT3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280316 | SP3F | Tube-packed | 6 N-Channel | 365W | 124A | 700V | Three-Phase Bridge | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R60MT07J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291146 | TO-263-7 | Tube-packed | - | - | - | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G2R120MT33J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291148 | TO-263-7 | Tube-packed | 1 N-Channel | - | 35A | 3300V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G2R1000MT33J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291150 | TO-263-7 | Tube-packed | 1 N-Channel | 74W | 5A | 3300V | - | - | -55℃~+175℃ | - | 1000mΩ | 3.5V | Single tube | 2.4pF | 238pF | 18nC | - | 10pF | |||
Min: 1 Mult: 1 | 0 | G2R1000MT17J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291152 | TO-263-7 | Tube-packed | 1 N-Channel | 54W | 5A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R450MT17J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291155 | TO-263-7 | Tube-packed | 1 N-Channel | 91W | 9A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R30MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291163 | TO-263-7 | Tube-packed | 1 N-Channel | 459W | 96A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SCTWA35N65G2VAG | STMicroelectronics | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281012 | TO-247 | Tube-packed | 1 N-Channel | 208W | 45A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R60MT07D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281046 | TO-247-3 | Tube-packed | - | - | - | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SCTW40N120G2V | STMicroelectronics | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281060 | TO-247-3 | Tube-packed | 1 N-Channel | 278W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | G3R160MT12D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281065 | TO-247-3 | Tube-packed | 1 N-Channel | 123W | 22A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC017SMA120J | Microchip Tech | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3282376 | SOT-227 | Bag-packed | 1 N-Channel | 278W | 88A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF3MR12KM1PHOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277321 | AG-62mm | Tray | 2 N-Channel | - | 375A | 1200V | Half Bridge | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FS03MR12A6MA1BBPSA1 | Infineon Technologies | AG-HYBRIDD-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277331 | AG-HYBRIDD-2 | Tray | 6 N-Channel | - | 400A | 1200V | Three-Phase Bridge | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170DUM11T3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290158 | SP3F | Bag-packed | 2 N-Channel | 1140W | 240A | 1700V | Common Source | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170TLM15CAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290163 | SP6 | Bag-packed | 4 N-channel | 843W | 179A | 1700V | Three-Phase Bridge | - | - | - | - | - | - | - | - | - | - | - |