Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
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Pricing
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Images
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Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
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Drain Source Voltage
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Configuration
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Min: 1 Mult: 1 | 0 | C3M0160120D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713505 | TO-247-3 | Tube-packed | 1 N-Channel | 97W | 17A | 1200V | - | |||
Min: 1 Mult: 1 | 0  | UJ3C065030K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5814993 | TO-247-3 | Tube-packed | 1 N-Channel | 441W | 85A | 650V | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ4SC075018B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5815000 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 259W | 72A | 750V | - | |||
Min: 1 Mult: 1 | 0 | IMW120R140M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536283 | TO-247-3 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMW120R090M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536282 | TO-247-3 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMW65R027M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536286 | TO-247-3 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | IMW65R107M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536289 | TO-247-3 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120DUM31TBL1NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17549458 | - | Bag-packed | 2 N-Channel | 310W | 79A | 1200V | Common Source | |||
Min: 1 Mult: 1 | 0 | PAA12400BM3 | PN Junction Semiconductor | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17638836 | - | Tray | 2 N-Channel | - | 350A | 1200V | Half Bridge | |||
Min: 1 Mult: 1 | 0 | FF2MR12KM1HOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17620139 | AG-62mm | Tray | 2 N-Channel | - | 500A | 1200V | Half Bridge | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM45CT1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17567991 | - | Bag-packed | 2 N-Channel | 319W | 64A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | DF23MR12W1M1B11BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17358904 | - | Tray | 2 N-Channel | - | 25A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM03T6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17582417 | - | Bag-packed | 2 N-Channel | 3.215kW | 805A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120HM083AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17541623 | - | Bag-packed | 4 N-channel | 1.042kW | 251A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM07T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17466726 | - | Bag-packed | 2 N-Channel | 988W | 353A | 700V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM039CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17427285 | - | Bag-packed | 2 N-Channel | 2.4kW | 523A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM11CT3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17359853 | - | Bag-packed | 2 N-Channel | 1.14kW | 240A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | WNSC2M1K0170WQ | WeEn Semiconductors | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20141065 | TO-247-3 | Bag-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SICW1000N170A-BP | MCC(Micro Commercial Components) | TO-247AB Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19992087 | TO-247AB | Bag-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD206525NCTGH | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605629 | TO-247 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212025NCFGH | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605660 | TO-247-4L | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212060NCFGH | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605684 | TO-247-4L | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | YJD212060NCTGH | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605686 | TO-247 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | DF14MR12W1M1HFB67BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20190885 | - | Tray | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | GCMX040B120S1-E1 | SemiQ | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19941443 | SOT-227 | Tube-packed | - | - | - | - | - |