Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain Source Threshold Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Drain-Source On-State Resistance(15V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Encapsulated Type
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain Source Threshold Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Drain-Source On-State Resistance(15V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Encapsulated Type
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Min: 1 Mult: 1 |
90
(0+0+90)In Stock  | NTHL070N120M3S | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20539232 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
89
(0+0+89)In Stock | SP25N120CTF | Siliup | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466832 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
89
(0+13+76)In Stock | C3M0016120K | Wolfspeed | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713523 | TO-247-4 | Tube-packed | 1 N-Channel | 556W | 115A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
88
(0+88+0)In Stock | RSM120040W | REASUNOS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5371982 | TO-247-3 | Tube-packed | 1 N-Channel | 340W | 68A | 1200V | 2.6V | 11pF | 2070pF | 121nC | -40℃~+175℃ | 40mΩ | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
86
(0+31+55)In Stock | IV1Q12050T4 | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2924638 | TO-247-4 | Tube-packed | 1 N-Channel | 344W | 58A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
85
(0+52+33)In Stock | IV1Q12160T4 | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2894810 | TO-247-4 | Tube-packed | 1 N-Channel | 138W | 20A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
80
(0+60+20)In Stock | GC3M0080120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547378 | TO-247-4 | Tube-packed | 1 N-Channel | 136W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
76
(0+50+26)In Stock | GC2M0080120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547377 | TO-247-4 | Tube-packed | 1 N-Channel | 192W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
71
(0+67+4)In Stock | GC2M0160120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547379 | TO-247-4 | Tube-packed | 1 N-Channel | 125W | 18A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
70
(0+0+70)In Stock | GC3M0016120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435039 | TO247-3 | Tube-packed | 1 N-Channel | 556W | 115A | 1200V | 2.5V | 13pF | 6085pF | 207nC | - | - | 16mΩ | - | - | - | - | 230pF | |||
Min: 1 Mult: 1
Full Reel: 2000
|
70
(0+70+0)In Stock | NTBL045N065SC1 | onsemi | H-PSOF8L(9.9x11.68) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5208253 | H-PSOF8L(9.9x11.68) | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
65
(0+0+65)In Stock | IMZA65R072M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3029556 | TO-247-4 | Tube-packed | 1 N-Channel | 96W | 28A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
65
(0+0+65)In Stock | S1M075120D1 | Sichainsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363609 | TO-247-3L | Tube-packed | 1 N-Channel | 214W | 38A | 1200V | 2.8V | 3.9pF | 920pF | 40nC | -55℃~+175℃ | 75mΩ | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
64
(0+64+0)In Stock | GC3M0065100K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435037 | TO-247-4 | Tube-packed | 1 N-Channel | 113.5W | 32A | 1000V | 2.1V | 5pF | 760pF | 37nC | -55℃~+150℃ | - | 65mΩ | - | - | Single tube | - | 70pF | |||
Min: 1 Mult: 1 |
63
(0+63+0)In Stock | NTH4L014N120M3P | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5209032 | TO-247-4 | Tube-packed | 1 N-Channel | 343W | 127A | 1200V | 3V | 29pF | 6230pF | 329nC | -55℃~+175℃ | 14mΩ | 16mΩ | - | - | Single tube | - | - | |||
Min: 1 Mult: 1 |
60
(0+0+60)In Stock | HC2M0160120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723851 | TO-247-3L | Tube-packed | - | 45W | 18A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
60
(0+0+60)In Stock | ADQ120N040BH | ANHI | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22470094 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
57
(0+0+57)In Stock | NTH4L075N065SC1 | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5209036 | TO-247-4 | Tube-packed | 1 N-Channel | 74W | 38A | 650V | 2.8V | 9pF | 1196pF | 164nC | -55℃~+175℃ | 57mΩ | 75mΩ | - | - | Single tube | - | - | |||
Min: 1 Mult: 1 |
51
(0+30+21)In Stock | GC3M0160120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435047 | TO-247-3 | Tube-packed | 1 N-Channel | 97W | 17A | 1200V | 2.8V | 3pF | 632pF | 38nC | -55℃~+150℃ | - | 160mΩ | - | - | - | - | 39pF | |||
Min: 1 Mult: 1 |
50
(0+0+50)In Stock | HC3M001K170J | HXY MOSFET | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449551 | TO-263-7L | Tube-packed | 1 N-Channel | - | 6.7A | 1700V | 1.8V | - | - | - | -55℃~+175℃ | - | - | - | 700mΩ | - | - | - | |||
Min: 1 Mult: 1 |
50
(0+0+50)In Stock | S1M040120D | Sichainsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363606 | TO-247-3L | Tube-packed | 1 N-Channel | 326W | 73A | 1200V | 2.8V | 10pF | 2159pF | 76nC | -55℃~+175℃ | 32mΩ | 40mΩ | - | - | - | - | - | |||
Min: 1 Mult: 1 |
50
(0+0+50)In Stock | ASXM028120P | AnBon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C29118251 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
|
50
(0+50+0)In Stock | G3R75MT12J | Navitas | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C25836783 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
46
(0+0+46)In Stock | C2M0080120D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713516 | TO-247-3 | Tube-packed | 1 N-Channel | 192W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
45
(0+30+15)In Stock | HC2M0080120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723850 | TO-247-3L | Tube-packed | - | 192W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - |