Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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Min: 1 Mult: 1 |
39
(0+39+0)In Stock | IV1Q12750O3 | InventChip | TO-220-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979250 | TO-220-3 | Tube-packed | 1 N-Channel | 66.9W | 6.4A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
38
(0+20+18)In Stock | GC3M0120090D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435035 | TO-247-3 | Tube-packed | 1 N-Channel | 97W | 25A | 900V | 120mΩ | -55℃~+175℃ | - | - | - | 2.1V | Single tube | 48pF | 414pF | 21nC | - | 3pF | |||
Min: 1 Mult: 1
Full Reel: 500
|
35
(0+30+5)In Stock | IV2Q171R0D7 | InventChip | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806852 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
34
(0+0+34)In Stock | HC3M0016120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723854 | TO-247-3L | Tube-packed | - | 556W | 115A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
34
(0+0+34)In Stock | KN3M50120K | KNSCHA | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5373189 | TO-247-4 | Tube-packed | - | - | 58A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
32
(0+30+2)In Stock | CI60N120SM5(TOKMAS) | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547659 | TO-247-3 | Tube-packed | 1 N-Channel | - | - | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
32
(0+0+32)In Stock | YJD212080NCTG1 | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605692 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
32
(0+0+32)In Stock | YJD212040NCFG2 | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605668 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
31
(0+0+31)In Stock  | NTH4L025N065SC1 | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5209034 | TO-247-4 | Tube-packed | 1 N-Channel | 174W | 99A | 650V | 25mΩ | -55℃~+175℃ | 19mΩ | - | - | 2.8V | Single tube | 25pF | 3480pF | 164nC | - | - | |||
Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M0032120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723855 | TO-247-3L | Tube-packed | - | 283W | 63A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | HC3M0075120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723860 | TO-247-4L | Tube-packed | - | 136W | 32A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | HC3M0030065K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449545 | TO-247-4L | Tube-packed | 1 N-Channel | - | 97A | 650V | - | -55℃~+175℃ | - | - | 25mΩ | 2V | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | HC3M0045065K1 | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449547 | TO-247-4L | Tube-packed | 1 N-Channel | - | 49A | 650V | - | -55℃~+175℃ | - | - | 33mΩ | 2V | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC2M0040120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723848 | TO-247-4L | Tube-packed | - | 405W | 78A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | HC3M0015120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449548 | TO-247-4L | Tube-packed | 1 N-Channel | - | 117A | 1200V | - | -55℃~+175℃ | - | - | 33mΩ | 2V | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | HC3M00160120D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449549 | TO-247 | Tube-packed | 1 N-Channel | - | 17A | 1200V | - | -55℃~+175℃ | - | - | 160mΩ | 2V | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | HC2M0045170D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723849 | TO-247-3L | Tube-packed | - | 520W | 72A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M0032120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723856 | TO-247-4L | Tube-packed | - | 283W | 63A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | SC015N065T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493858 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | AS2M040120P | AnBon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19762685 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+30+0)In Stock | KXMW120R40T3 | Power X | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20607109 | TO-247-3L | Tube-packed | 1 N-Channel | 519W | 68A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | IV1Q06060T4G | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806839 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+30+0)In Stock | GC3M0075120K | SUPSiC | TO247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435055 | TO247-4 | Tube-packed | 1 N-Channel | 136W | 32A | 1200V | 75mΩ | -40℃~+175℃ | - | - | - | 2.5V | Single tube | 2pF | 1390pF | 53nC | - | 58pF | |||
Min: 1 Mult: 1 |
30
(0+30+0)In Stock | IMW65R048M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536287 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | SC160N120T8L | SPS | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493854 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |