Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Channel Type
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Drain Source Threshold Voltage
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Encapsulated Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Channel Type
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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Min: 1 Mult: 1 |
30
(0+0+30)In Stock | SC060N065T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493856 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | SC015N065TCL | SPS | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493857 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | SC013N120TCL | SPS | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493859 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
|
30
(0+0+30)In Stock | CMS120N080B | Bruckewell | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C29781281 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | IV1Q12080T4 | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979244 | TO-247-4 | Tube-packed | - | -55℃~+175℃ | - | - | 80mΩ | 1 N-Channel | 3.6V | Single tube | 300W | 42A | 1200V | 6.7pF | 1680pF | 76nC | - | 69pF | |||
Min: 1 Mult: 1 |
30
(0+30+0)In Stock | IV1Q12080T4Z | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806849 | TO-247-4 | Tube-packed | - | -55℃~+175℃ | - | - | 80mΩ | 1 N-Channel | - | Single tube | 300W | 42A | 1200V | 6.7pF | 1680pF | 76nC | - | 69pF | |||
Min: 1 Mult: 1 |
30
(0+0+30)In Stock | YJD212080NCTG1 | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605692 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
29
(0+0+29)In Stock | SC075N120T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493862 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
29
(0+0+29)In Stock  | NTH4L025N065SC1 | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5209034 | TO-247-4 | Tube-packed | 25mΩ | -55℃~+175℃ | 19mΩ | - | - | 1 N-Channel | 2.8V | Single tube | 174W | 99A | 650V | 25pF | 3480pF | 164nC | - | - | |||
Min: 1 Mult: 1 |
29
(0+0+29)In Stock | SC021N120T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493860 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
29
(0+0+29)In Stock | SC032N120T8L | SPS | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493861 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
28
(0+22+6)In Stock | HC3M0060065K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723858 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | 150W | 37A | 650V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
28
(0+28+0)In Stock | IMW120R220M1HXKSA1 | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2997930 | TO-247-3 | Tube-packed | - | - | - | - | - | 1 N-Channel | - | - | 75W | 13A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
27
(0+0+27)In Stock | IV1Q12080T3Z | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806848 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
25
(0+0+25)In Stock | GC3M0120100K | SUPSiC | TO247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435038 | TO247-4 | Tube-packed | 120mΩ | -55℃~+150℃ | - | - | - | 1 N-Channel | 2.1V | - | 83W | 22A | 1000V | 3pF | 414pF | 22nC | - | 48pF | |||
Min: 1 Mult: 1 |
24
(0+21+3)In Stock | S1M075120H2 | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363608 | TO-247-4L | Tube-packed | 75mΩ | -55℃~+175℃ | 60mΩ | - | - | 1 N-Channel | 2.8V | - | 224W | 44A | 1200V | 3.8pF | 1037pF | 40nC | - | - | |||
Min: 1 Mult: 1 |
23
(0+23+0)In Stock | IV1Q12080T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979243 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 80mΩ | 1 N-Channel | 3.6V | Single tube | 300W | 42A | 1200V | 6.7pF | 1680pF | 76nC | - | - | |||
Min: 1 Mult: 1 |
23
(0+0+23)In Stock | CI90N120SM4 | Tokmas | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5364637 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | 90A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
23
(0+23+0)In Stock | IMZA65R048M1H | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536298 | TO-247-4 | Tube-packed | - | -55℃~+150℃ | 48mΩ | - | - | 1 N-Channel | 4.5V | Single tube | 125W | 100A | 650V | 13pF | 1118pF | 33nC | - | - | |||
Min: 1 Mult: 1 |
20
(0+0+20)In Stock | S1M075120H1 | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363607 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | 70mΩ | - | - | 1 N-Channel | 2.8V | - | 214W | 38A | 1200V | 3.9pF | 920pF | 40nC | - | - | |||
Min: 1 Mult: 1 |
20
(0+0+20)In Stock | HC3M0075120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723859 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | 136W | 32A | 1200V | - | - | - | - | - | |||
Min: 1 Mult: 1 |
20
(0+0+20)In Stock | S1M075120D2 | Sichainsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363610 | TO-247-3L | Tube-packed | 75mΩ | -55℃~+175℃ | - | - | - | 1 N-Channel | 2.8V | - | 214W | 44A | 1200V | 4.3pF | 1020pF | 40nC | - | - | |||
Min: 1 Mult: 1 |
20
(0+0+20)In Stock | SG2M040120L | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C37636037 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
20
(0+0+20)In Stock | SG2M021120L | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C37636034 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 |
20
(0+0+20)In Stock | CI30N120M4(TOKMAS) | Tokmas | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547658 | TO-247-4 | Tube-packed | - | - | - | - | - | 1 N-Channel | - | - | - | - | 1200V | - | - | - | - | - |