Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
843
Manufacturer
Package
Operating Temperature
Configuration
Total Gate Charge
V(BR)DSS
Output Capacitance
Vgs(th)
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
843
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Vgs(th)
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Channel Type
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Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Vgs(th)
|
Channel Type
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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| | Min: 1 Mult: 1 |
1248
(149+1099+0)In Stock | GC2M0080120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435046 | TO247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 80mΩ | 2.9V | 1 N-channel | - | 192W | 36A | 1200V | 7.5pF | 1130pF | 71nC | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
|
781
(781+0+0)In Stock | IMBF170R1K0M1XTMA1 | Infineon Technologies | TO-263-7-13 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3279264 | TO-263-7-13 | Tape & Reel (TR) | 809mΩ | -55℃~+175℃ | - | - | - | 4.5V | 1 N-channel | Single Tube | 68W | 5.2A | 1700V | 0.7pF | 275pF | 5nC | - | - | ||
| | Min: 1 Mult: 1 |
780
(260+520+0)In Stock | GC2M1000170D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435057 | TO247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 0.8Ω | 2.8V | 1 N-channel | Single Tube | 69W | 5A | 1700V | 2.2pF | 215pF | 22nC | - | - | ||
| | Min: 1 Mult: 1 |
514
(511+3+0)In Stock  | C3M0040120K | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5588747 | TO-247-4L | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 326W | 66A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
404
(0+404+0)In Stock | NTH4L040N120M3S | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673849 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
402
(402+0+0)In Stock | C3M0016120K | Wolfspeed | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713523 | TO-247-4 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 556W | 115A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
401
(401+0+0)In Stock | S1M075120H2 | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363608 | TO-247-4L | Tube-packed | 75mΩ | -55℃~+175℃ | 60mΩ | - | - | 2.8V | 1 N-channel | - | 224W | 44A | 1200V | 3.8pF | 1037pF | 40nC | - | - | ||
| | Min: 1 Mult: 1 |
394
(0+394+0)In Stock | IMW65R039M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278949 | TO-247-3-41 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 176W | 46A | 650V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
353
(353+0+0)In Stock | CI7N170SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2842690 | TO-247-3 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 62W | 7A | 1700V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
330
(330+0+0)In Stock | SCT3160KLGC11 | ROHM Semicon | TO-247AC-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C191060 | TO-247AC-3 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 103W | 17A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
323
(60+263+0)In Stock | SP25N120CTK | Siliup | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466831 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
284
(0+284+0)In Stock | NVH4L040N120M3S | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673852 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
267
(267+0+0)In Stock | CI60N120SM4 | Tokmas | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2980704 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | - | - | 45ｍΩ | 2.5V | 1 N-channel | Single Tube | 330W | 60A | 1200V | 29pF | 3550pF | 160nC | - | - | ||
| | Min: 1 Mult: 1 |
237
(0+237+0)In Stock | NTHL1000N170M1 | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673851 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
209
(31+178+0)In Stock | IMZ120R030M1HXKSA1 | Infineon Technologies | TO-247-4-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289091 | TO-247-4-1 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 227W | 56A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
203
(203+0+0)In Stock | CI19N120SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2959833 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 165mΩ | 2.5V | 1 N-channel | Single Tube | 125W | 19A | 1200V | 36pF | 950pF | 50nC | - | - | ||
| | Min: 1 Mult: 1 |
197
(0+197+0)In Stock | IMZ120R090M1H | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536293 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
187
(187+0+0)In Stock | CI90N120SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5364636 | TO-247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 27mΩ | 2.5V | 1 N-channel | Single Tube | 463W | 90A | 1200V | 42.8pF | 4700pF | 164nC | - | 231pF | ||
| | Min: 1 Mult: 1 |
187
(187+0+0)In Stock | IMZ120R045M1XKSA1 | Infineon Technologies | TO-247-4-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278960 | TO-247-4-1 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 228W | 52A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
180
(179+1+0)In Stock | GC3M0075120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435045 | TO247-3 | Tube-packed | 75mΩ | -40℃~+175℃ | - | - | - | 2.5V | 1 N-channel | Single Tube | 136W | 32A | 1200V | 2pF | 1390pF | 54nC | - | 58pF | ||
| | Min: 1 Mult: 1 |
179
(179+0+0)In Stock | CI30N65SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3010930 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 65mΩ | 2.3V | 1 N-channel | Single Tube | 171W | 30A | 650V | 77pF | 1700pF | 65nC | - | - | ||
| | Min: 1 Mult: 1 |
170
(9+161+0)In Stock | GC3M0040120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435043 | TO-247-3 | Tube-packed | 40mΩ | -40℃~+175℃ | - | - | - | 2.7V | 1 N-channel | Single Tube | 326W | 66A | 1200V | 5pF | 2900pF | 101nC | - | 103pF | ||
| | Min: 1 Mult: 1 |
169
(7+162+0)In Stock | GC3M0065100K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435037 | TO-247-4 | Tube-packed | 65mΩ | -55℃~+150℃ | - | - | - | 2.1V | 1 N-channel | Single Tube | 113.5W | 32A | 1000V | 5pF | 760pF | 37nC | - | 70pF | ||
| | Min: 1 Mult: 1 |
162
(162+0+0)In Stock | SCT3060ARC14 | ROHM Semicon | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5361257 | TO-247-4L | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 165W | 39A | 650V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
160
(160+0+0)In Stock | IMW120R030M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536280 | TO-247-3 | Tube-packed | 42mΩ | -55℃~+175℃ | 30mΩ | - | - | 4.5V | 1 N-channel | Single Tube | 227W | 56A | 1200V | 13pF | 2120pF | 63nC | - | - |