Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
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Pricing
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Images
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Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
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Drain Source Voltage
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Configuration
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Min: 1 Mult: 1 |
1
(0+0+1)In Stock  | NTH4L060N065SC1 | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5209035 | TO-247-4 | Tube-packed | 1 N-Channel | 176W | 47A | 650V | - | |||
Min: 1 Mult: 1 |
1
(0+0+1)In Stock | IMW65R030M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289082 | TO-247-3-41 | Tube-packed | 1 N-Channel | 197W | 58A | 650V | - | |||
Min: 1 Mult: 1 |
1
(0+1+0)In Stock | CAB450M12XM3 | Wolfspeed | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19727291 | - | Box-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 |
1
(0+0+1)In Stock | SCTWA35N65G2V-4 | STMicroelectronics | HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5268820 | HiP-247-4 | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
|
1
(0+1+0)In Stock | C3M0120090J-TR | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713507 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 83W | 22A | 900V | - | |||
Min: 1 Mult: 1 |
1
(0+0+1)In Stock | S2M0080120N | SMC(Sangdest Microelectronicstronic (Nanjing)) | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18212974 | SOT-227 | Box-packed | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 500
|
1
(0+0+1)In Stock | KXMT120R40T8 | Power X | TOLL-8L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20607130 | TOLL-8L | Tape & Reel (TR) | 1 N-Channel | 365W | 87A | 1200V | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | NTBG015N065SC1 | onsemi | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2902160 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 500W | 145A | 650V | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | NTBG045N065SC1 | onsemi | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2902161 | TO-263-7 | Tape & Reel (TR) | 1 N-Channel | 242W | 62A | 650V | - | |||
Min: 1 Mult: 1 | 0 | NTH4L015N065SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2902167 | TO-247-4L | Tube-packed | 1 N-Channel | 500W | 142A | 650V | - | |||
Min: 1 Mult: 1
Full Reel: 3000
| 0 | SCTL35N65G2V | STMicroelectronics | VDFN-8-Power Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2970385 | VDFN-8-Power | Tape & Reel (TR) | 1 N-Channel | 417W | 40A | 650V | - | |||
Min: 1 Mult: 1 | 0 | FF6MR12W2M1B11BOMA1 | Infineon Technologies | AG-EASY2BM-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3288032 | AG-EASY2BM-2 | Tray | 2 N-Channel | - | 200A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSC060SMA070S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3288227 | D3PAK | Tube-packed | 1 N-Channel | 130W | 37A | 700V | - | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | SCTH40N120G2V-7 | STMicroelectronics | H2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277217 | H2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 238W | 36A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | F423MR12W1M1B76BPSA1 | Infineon Technologies | AG-EASY1B-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277326 | AG-EASY1B-2 | Tray | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF8MR12W2M1B11BOMA1 | Infineon Technologies | AG-EASY2BM-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277328 | AG-EASY2BM-2 | Tray | 2 N-Channel | - | 150A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | F445MR12W1M1B76BPSA1 | Infineon Technologies | AG-EASY1B-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277325 | AG-EASY1B-2 | Tray | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF6MR12W2M1B70BPSA1 | Infineon Technologies | AG-EASY2B Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277327 | AG-EASY2B | Tray | 2 N-Channel | - | 200A | 1200V | Half Bridge | |||
Min: 1 Mult: 1 | 0 | FS05MR12A6MA1BBPSA1 | Infineon Technologies | AG-HYBRIDD-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277329 | AG-HYBRIDD-2 | Tray | - | - | 200A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | AIMW120R045M1XKSA1 | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289049 | TO-247-3 | Tube-packed | 1 N-Channel | 228W | 52A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM027CD3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277662 | - | Box-packed | 2 N-Channel | 2.97kW | 733A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSC035SMA170S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277668 | D3PAK | Bag-packed | 1 N-Channel | 278W | 59A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | MSC100SM70JCU2 | Microchip Tech | SOT-227(ISOT-OP) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289951 | SOT-227(ISOT-OP) | Tube-packed | 1 N-Channel | 365W | 124A | 700V | - | |||
Min: 1 Mult: 1 | 0 | MSC017SMA120S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277176 | D3PAK | Bag-packed | 1 N-Channel | 357W | 100A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | IMW65R083M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278946 | TO-247-3-41 | Tube-packed | 1 N-Channel | 104W | 24A | 650V | - |