Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
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Pricing
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Configuration
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Configuration
|
Channel Type
|
Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Min: 1 Mult: 1 | 0 | MSCSM70DUM10T3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280296 | SP3F | Bag-packed | Common Source | 2 N-Channel | 690W | 241A | 700V | |||
Min: 1 Mult: 1 | 0 | MSCSM120DUM16T3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280300 | SP3F | Bag-packed | Common Source | 2 N-Channel | 745W | 173A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM11CT3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280301 | SP3F | Tube-packed | - | 2 N-Channel | 1.067kW | 254A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM16C3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280305 | SP3F | Bag-packed | Three-Phase Bridge | 4 N-channel | 745W | 173A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSCSM120HM50CT3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280312 | SP3F | Tube-packed | - | 4 N-channel | 245W | 55A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSCSM70DUM07T3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280313 | SP3F | Bag-packed | Common Source | 2 N-Channel | 988W | 353A | 700V | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM11CAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280320 | SP6 | Bag-packed | Three-Phase Bridge | 4 N-channel | 1042W | 251A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM08CAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280322 | SP6 | Bag-packed | Three-Phase Bridge | 4 N-channel | 1378W | 333A | 1200V | |||
Min: 1 Mult: 1 | 0 | G3R160MT17J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291151 | TO-263-7 | Tube-packed | - | 1 N-Channel | 187W | 22A | 1700V | |||
Min: 1 Mult: 1 | 0 | G3R75MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291154 | TO-263-7 | Tube-packed | - | 1 N-Channel | 224W | 42A | 1200V | |||
Min: 1 Mult: 1 | 0 | G3R40MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291159 | TO-263-7 | Tube-packed | - | 1 N-Channel | 374W | 75A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSC100SM70JCU2 | Microchip Tech | SOT-227(ISOT-OP) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289951 | SOT-227(ISOT-OP) | Tube-packed | - | 1 N-Channel | 365W | 124A | 700V | |||
Min: 1 Mult: 1 | 0 | G3R20MT12N | GeneSiC Semiconductor | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280066 | SOT-227 | Tube-packed | - | 1 N-Channel | 365W | 105A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSC100SM70JCU3 | Microchip Tech | SOT-227(ISOT-OP) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280071 | SOT-227(ISOT-OP) | Tube-packed | - | 1 N-Channel | 365W | 124A | 700V | |||
Min: 1 Mult: 1 | 0 | MSC025SMA120B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290712 | TO-247-3 | Tube-packed | - | 1 N-Channel | 500W | 103A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSC035SMA070B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290728 | TO-247-3 | Tube-packed | - | 1 N-Channel | 283W | 77A | 700V | |||
Min: 1 Mult: 1 | 0 | G3R40MT12K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290745 | TO-247-4 | Tube-packed | - | 1 N-Channel | 333W | 71A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM02CT6LIAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280326 | SP6 | Tube-packed | - | 2 N-Channel | 3.75kW | 947A | 1200V | |||
Min: 1 Mult: 1 | 0 | MSC017SMA120S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277176 | D3PAK | Bag-packed | - | 1 N-Channel | 357W | 100A | 1200V | |||
Min: 1 Mult: 1
Full Reel: 1000
| 0 | SCTH40N120G2V-7 | STMicroelectronics | H2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277217 | H2PAK-7 | Tape & Reel (TR) | - | 1 N-Channel | 238W | 36A | 1200V | |||
Min: 1 Mult: 1 | 0 | F445MR12W1M1B76BPSA1 | Infineon Technologies | AG-EASY1B-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277325 | AG-EASY1B-2 | Tray | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | F423MR12W1M1B76BPSA1 | Infineon Technologies | AG-EASY1B-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277326 | AG-EASY1B-2 | Tray | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF6MR12W2M1B70BPSA1 | Infineon Technologies | AG-EASY2B Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277327 | AG-EASY2B | Tray | Half Bridge | 2 N-Channel | - | 200A | 1200V | |||
Min: 1 Mult: 1 | 0 | FF8MR12W2M1B11BOMA1 | Infineon Technologies | AG-EASY2BM-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277328 | AG-EASY2BM-2 | Tray | - | 2 N-Channel | - | 150A | 1200V | |||
Min: 1 Mult: 1 | 0 | FS05MR12A6MA1BBPSA1 | Infineon Technologies | AG-HYBRIDD-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277329 | AG-HYBRIDD-2 | Tray | - | - | - | 200A | 1200V |