Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
748
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Configuration
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
748
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Pricing
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Images
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Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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| | Min: 1 Mult: 1 | 0 | SCT3080KLHRC11 | ROHM Semicon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C559682 | TO-247-3 | Tube-packed | 1 N-Channel | 165W | 31A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0  | IMW65R072M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536288 | TO-247-3 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IMZ120R350M1H | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536296 | TO-247-4 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IMW65R083M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278946 | TO-247-3-41 | Tube-packed | 1 N-Channel | 104W | 24A | 650V | - | ||
| | Min: 1 Mult: 1 | 0 | G3R45MT17K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281100 | TO-247-4 | Tube-packed | 1 N-Channel | 438W | 61A | 1700V | - | ||
| | Min: 1 Mult: 1 | 0 | G3R20MT12K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290744 | TO-247-4 | Tube-packed | 1 N-Channel | 542W | 128A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | NVH4L015N065SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281111 | TO-247-4L | Tray | 1 N-Channel | 500W | 142A | 650V | - | ||
| | Min: 1 Mult: 1 | 0 | G3R450MT17D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290715 | TO-247-3 | Tube-packed | 1 N-Channel | 88W | 9A | 1700V | - | ||
| | Min: 1 Mult: 1 | 0 | FF45MR12W1M1_B11 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C541093 | - | Tray | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | G3R12MT12K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6048360 | TO-247-4 | Tube-packed | 1 N-Channel | 567W | 157A | 1200V | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ4C075060B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6343455 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 128W | 25.8A | 750V | - | ||
| | Min: 1 Mult: 1 | 0 | G2R1000MT17D | GeneSiC Semiconductor | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5748044 | TO-247-3 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IV2Q171R0T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806851 | TO-247-3 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | UF4C120053K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6006292 | - | Tube-packed | 1 N-Channel | 263W | 34A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | UF3SC065007K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6006288 | - | Tube-packed | 1 N-Channel | 789W | 120A | 650V | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ4C075023B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5814998 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 278W | 64A | 750V | - | ||
| | Min: 1 Mult: 1 | 0 | UF4SC120023K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6343383 | - | Tube-packed | 1 N-Channel | 385W | 53A | 1200V | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
| 0 | UF3C065030B3 | Qorvo | TO-263(D2PAK) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6581984 | TO-263(D2PAK) | Tape & Reel (TR) | 1 N-Channel | 242W | 65A | 650V | - | ||
| | Min: 1 Mult: 1 | 0 | UJ3C065030T3S | Qorvo | TO-220-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6582084 | TO-220-3 | Tube-packed | 1 N-Channel | 441W | 85A | 650V | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ4SC075011B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6582091 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 357W | 104A | 750V | - | ||
| | Min: 1 Mult: 1 | 0 | AS1M025120P | AnBon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7217740 | TO-247-3 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70AM10CT3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280295 | SP3F | Tube-packed | 2 N-Channel | 690W | 241A | 700V | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70DUM10T3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280296 | SP3F | Bag-packed | 2 N-Channel | 690W | 241A | 700V | Common Source | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120DUM16T3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280300 | SP3F | Bag-packed | 2 N-Channel | 745W | 173A | 1200V | Common Source | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120AM11CT3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280301 | SP3F | Tube-packed | 2 N-Channel | 1.067kW | 254A | 1200V | - |