Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
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Pricing
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Images
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Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Configuration
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Min: 1 Mult: 1 | 0 | G3R160MT17J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291151 | TO-263-7 | Tube-packed | 1 N-Channel | 187W | 22A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | MSC360SMA120S | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3282314 | - | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | GA10JT12-263 | GeneSiC Semiconductor | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3282332 | - | Tube-packed | - | 170W | 25A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM027CD3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277662 | - | Box-packed | 2 N-Channel | 2.97kW | 733A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSC035SMA170S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277668 | D3PAK | Bag-packed | 1 N-Channel | 278W | 59A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | MSC100SM70JCU2 | Microchip Tech | SOT-227(ISOT-OP) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289951 | SOT-227(ISOT-OP) | Tube-packed | 1 N-Channel | 365W | 124A | 700V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM31C3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290157 | SP3F | Bag-packed | 4 N-channel | 395W | 89A | 1200V | Three-Phase Bridge | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM03CT6LIAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290165 | SP6 | Tube-packed | 2 N-Channel | 3.215kW | 805A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM16C3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280305 | SP3F | Bag-packed | 4 N-channel | 745W | 173A | 1200V | Three-Phase Bridge | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM11CAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280320 | SP6 | Bag-packed | 4 N-channel | 1042W | 251A | 1200V | Three-Phase Bridge | |||
Min: 1 Mult: 1 | 0 | MSCSM120TLM08CAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280322 | SP6 | Bag-packed | 4 N-channel | 1378W | 333A | 1200V | Three-Phase Bridge | |||
Min: 1 Mult: 1 | 0 | MSCSM70TLM07CAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280323 | SP6 | Bag-packed | 4 N-channel | 966W | 349A | 700V | Three-Phase Bridge | |||
Min: 1 Mult: 1 | 0 | MSCSM120AM02CT6LIAG | Microchip Tech | SP6 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280326 | SP6 | Tube-packed | 2 N-Channel | 3.75kW | 947A | 1200V | - | |||
Min: 1 Mult: 1 | 0  | MSC035SMA170B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281077 | TO-247-3 | Tube-packed | 1 N-Channel | 370W | 68A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | G3R45MT17K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281100 | TO-247-4 | Tube-packed | 1 N-Channel | 438W | 61A | 1700V | - | |||
Min: 1 Mult: 1 | 0 | NVH4L015N065SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281111 | TO-247-4L | Tray | 1 N-Channel | 500W | 142A | 650V | - | |||
Min: 1 Mult: 1 | 0 | G3R75MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291154 | TO-263-7 | Tube-packed | 1 N-Channel | 224W | 42A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | G3R40MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3291159 | TO-263-7 | Tube-packed | 1 N-Channel | 374W | 75A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | G3R20MT12N | GeneSiC Semiconductor | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280066 | SOT-227 | Tube-packed | 1 N-Channel | 365W | 105A | 1200V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM10CT3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280295 | SP3F | Tube-packed | 2 N-Channel | 690W | 241A | 700V | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70DUM10T3AG | Microchip Tech | SP3F Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3280296 | SP3F | Bag-packed | 2 N-Channel | 690W | 241A | 700V | Common Source | |||
Min: 1 Mult: 1 | 0 | MSCSM170DUM058AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3276352 | - | Bag-packed | 2 N-Channel | 1642W | 353A | 1700V | Common Source | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | NTBG1000N170M1 | onsemi | D2PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22415750 | D2PAK | Tape & Reel (TR) | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | ADW120N040BH | ANHI | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22470095 | TO-247-3L | Tube-packed | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSC750SMA170B | Microchip Tech | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281045 | TO-247-3 | Tube-packed | 1 N-Channel | 68W | 7A | 1700V | - |