Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
841
Manufacturer
Package
Operating Temperature
Configuration
Total Gate Charge
V(BR)DSS
Output Capacitance
Vgs(th)
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
841
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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V(BR)DSS
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Configuration
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Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Configuration
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| | Min: 1 Mult: 1 | 0 | C3M0030090K | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7457228 | TO-247-4L | Tube-packed | 1 N-channel | 240W | 73A | 900V | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120AM16CT1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17681392 | - | Tube-packed | 2 N-Channel | 745W | 173A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70VM10C4AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17690357 | - | Tube-packed | 2 N-Channel | 674W | 238A | 700V | - | ||
| | Min: 1 Mult: 1 | 0  | FS55MR12W1M1HB11NPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17644060 | - | Tray | 6 N-Channel | - | 15A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | APTM100A13SCG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17636088 | - | Bag-packed | 2 N-Channel | 1250W | 65A | 1000V | Half Bridge | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70AM025T6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17570730 | - | Bag-packed | 2 N-Channel | 1.882kW | 689A | 700V | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120DDUM31TBL2NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17439276 | - | Bag-packed | 4 N-channel | 310W | 79A | 1200V | Common Source | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120AM042D3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17316946 | - | Bag-packed | 2 N-Channel | 2.031kW | 495A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | IV2Q171R0T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806851 | TO-247-3 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | C3M0075120K | Wolfspeed | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5693030 | TO-247-4 | Tube-packed | 1 N-channel | 113.6W | 30A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | C2M0025120D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713522 | TO-247-3 | Tube-packed | 1 N-channel | 463W | 90A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM170TAM45CT3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17487944 | - | Bag-packed | 6 N-Channel | 319W | 64A | 1700V | - | ||
| | Min: 1 Mult: 1 | 0 | IMYH200R050M1HXKSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20191546 | - | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IMYH200R075M1HXKSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20191547 | - | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | VBP112MC100 | VBsemi Elec | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42412808 | TO-247 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | VBP112MC30 | VBsemi Elec | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42412811 | TO-247 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HNTH4L080N120SC1 | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389104 | TO-247-4L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HIMZ120R220M1H | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389131 | TO-247-4L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HIMW65R057M1H | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389139 | TO-247-3L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HIMZ120R140M1HXKSA1 | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389161 | TO-247-4L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HC1M45065J | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428800 | TO-247-4L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HC3M0120090D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428804 | TO-247 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120AM16T1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296357 | - | Bag-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70AM025D3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17519520 | - | Bag-packed | 2 N-Channel | 1.882kW | 689A | 700V | - | ||
| | Min: 1 Mult: 1 | 0 | UJ4C075033K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136815 | TO-247-3 | Tube-packed | 1 N-channel | 242W | 47A | 750V | - |