Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Vgs(th)
|
Channel Type
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Vgs(th)
|
Channel Type
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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| Min: 1 Mult: 1 |
157
(157+0+0)In Stock | CI40N65SM(TOKMAS) | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18214413 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
134
(37+97+0)In Stock | IV1Q12750T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979251 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 750mΩ | 4.3V | 1 N-channel | Single Tube | 78.4W | 6.8A | 1200V | 2.6pF | 260pF | 15.8nC | - | - | ||
| Min: 1 Mult: 1 |
125
(111+14+0)In Stock | GC3M0032120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435042 | TO-247-3 | Tube-packed | 32mΩ | -40℃~+175℃ | - | - | - | 2.5V | 1 N-channel | Single Tube | 283W | 63A | 1200V | 8pF | 3357pF | 114nC | - | 129pF | ||
| Min: 1 Mult: 1 |
112
(17+95+0)In Stock | GC2M0045170D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435058 | TO247-3 | Tube-packed | - | -40℃~+150℃ | - | - | 45mΩ | 2.6V | 1 N-channel | Single Tube | 520W | 72A | 1700V | 6.7pF | 3672pF | 188nC | - | - | ||
| Min: 1 Mult: 1
Full Reel: 800
|
110
(110+0+0)In Stock
View other supplier's inventory on LCSC
| NTBG040N120M3S | onsemi | D2PAK7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20539235 | D2PAK7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
103
(81+22+0)In Stock | GC3M0060065K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435031 | TO-247-4 | Tube-packed | 60mΩ | -40℃~+175℃ | - | - | - | 2.3V | 1 N-channel | Single Tube | 150W | 37A | 650V | 9pF | 1020pF | 46nC | - | 80pF | ||
| Min: 1 Mult: 1 |
102
(102+0+0)In Stock | GC2M0280120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435049 | TO247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 320mΩ | 3.1V | 1 N-channel | Single Tube | 69.4W | 11A | 1200V | 4pF | 267pF | 19nC | - | 31pF | ||
| Min: 1 Mult: 1 |
101
(5+96+0)In Stock | GC3M0032120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435053 | TO-247-4 | Tube-packed | 32mΩ | -40℃~+175℃ | - | - | - | 2.5V | 1 N-channel | Single Tube | 283W | 63A | 1200V | 8pF | 3357pF | 118nC | - | 129pF | ||
| Min: 1 Mult: 1
Full Reel: 2000
|
95
(0+95+0)In Stock | ADR065N028AH | ANHI | TOLL Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22470093 | TOLL | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
90
(0+90+0)In Stock | SP50N120CTF | Siliup | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466828 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
90
(90+0+0)In Stock | CI72N170SM | Tokmas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41782025 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
90
(0+90+0)In Stock | SP35N120CTF | Siliup | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466830 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
90
(0+90+0)In Stock
View other supplier's inventory on LCSC
| NTHL070N120M3S | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20539232 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
88
(0+88+0)In Stock
View other supplier's inventory on LCSC
| NTH4L070N120M3S | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673850 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | 65mΩ | - | - | 2.9V | 1 N-channel | Single Tube | 80W | 34A | 1200V | 5pF | 1230pF | 57nC | - | - | ||
| Min: 1 Mult: 1 |
87
(47+40+0)In Stock | GC2M0040120D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435044 | TO-247-3 | Tube-packed | - | -55℃~+150℃ | - | - | 80mΩ | 3.2V | 1 N-channel | Single Tube | 278W | 55A | 1200V | 11pF | 2440pF | 120nC | - | 171pF | ||
| Min: 1 Mult: 1 |
85
(0+85+0)In Stock | SP50N120CTK | Siliup | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466829 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
85
(30+55+0)In Stock | GC3M0120090D | SUPSiC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435035 | TO-247-3 | Tube-packed | 120mΩ | -55℃~+175℃ | - | - | - | 2.1V | 1 N-channel | Single Tube | 97W | 25A | 900V | 48pF | 414pF | 21nC | - | 3pF | ||
| Min: 1 Mult: 1 |
84
(0+84+0)In Stock | SP25N120CTF | Siliup | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466832 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
81
(1+80+0)In Stock | GC2M0080120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547377 | TO-247-4 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 192W | 36A | 1200V | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
79
(62+17+0)In Stock | GC3M0021120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435052 | TO-247-4 | Tube-packed | 21mΩ | -40℃~+175℃ | - | - | - | 2.5V | 1 N-channel | Single Tube | 469W | 100A | 1200V | 12pF | 4818pF | 162nC | - | 180pF | ||
| Min: 1 Mult: 1 |
79
(2+77+0)In Stock | HC2M1000170D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723852 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | 69W | 5A | 1700V | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
76
(21+55+0)In Stock | IV1Q12050T4 | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2924638 | TO-247-4 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 344W | 58A | 1200V | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
76
(0+76+0)In Stock | ADP120N080G2 | ANHI | TO-220 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22470090 | TO-220 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| Min: 1 Mult: 1 |
75
(0+75+0)In Stock | GC3M0040120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435054 | TO-247-4 | Tube-packed | 40mΩ | -40℃~+175℃ | - | - | - | 2.7V | 1 N-channel | Single Tube | 326W | 66A | 1200V | 5pF | 2900pF | 164nC | - | 103pF | ||
| Min: 1 Mult: 1 |
75
(60+15+0)In Stock | GC3M0080120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547378 | TO-247-4 | Tube-packed | - | - | - | - | - | - | 1 N-channel | - | 136W | 36A | 1200V | - | - | - | - | - |