Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
843
Manufacturer
Package
Operating Temperature
Configuration
Total Gate Charge
V(BR)DSS
Output Capacitance
Vgs(th)
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
843
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
|
Channel Type
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Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
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Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Vgs(th)
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Vgs(th)
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
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| | Min: 1 Mult: 1 | 0 | MSCSM120HRM052NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296358 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120HRM08NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296359 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120HRM163AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296360 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120VR1M062CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296362 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM170HRM11NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296365 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM170HRM233AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296366 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70VR1M10CT3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296370 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | UF3C120040K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6731509 | TO-247-3 | Tube-packed | 1 N-channel | 429W | 65A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | G3R12MT12K | GeneSiC Semiconductor | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6048360 | TO-247-4 | Tube-packed | 1 N-channel | 567W | 157A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | AS1M080120P | AnBon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6506979 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | AS1M025120P | AnBon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7217740 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IV2Q171R0T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806851 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IV1Q06040T4 | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979249 | TO-247-4 | Tube-packed | 1 N-channel | 348W | 72A | 650V | - | -55℃~+175℃ | - | - | 40mΩ | 3.2V | Single Tube | 10.8pF | 2692pF | 110.8nC | - | ||
| | Min: 1 Mult: 1 | 0  | IMW120R140M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6210721 | TO-247-3-41 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | SCT070W120G3-4AG | STMicroelectronics | HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5693016 | HiP247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | G3R20MT12N | Navitas | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C24427652 | SOT-227 | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF6MR12KM1PHOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277323 | AG-62mm | Tray | 2 N-Channel | - | 250A | 1200V | - | - | - | Half Bridge | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG65R072M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277242 | TO-263-7 | Tape & Reel (TR) | 1 N-channel | 140W | 33A | 650V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
| 0 | IMBG65R260M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277128 | TO-263-7 | Tape & Reel (TR) | 1 N-channel | 65W | 6A | 650V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FF2MR12KM1PHOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277322 | AG-62mm | Tray | 2 N-Channel | - | 500A | 1200V | - | - | - | Half Bridge | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | DF11MR12W1M1PB11 | Infineon Technologies | AG-EASY1B-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277324 | AG-EASY1B-2 | Tray | 2 N-Channel | - | 50A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | FS03MR12A6MA1LB | Infineon Technologies | AG-HYBRIDD-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277330 | AG-HYBRIDD-2 | Tray | 6 N-Channel | - | 400A | 1200V | - | - | - | Three-Phase Bridge | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | IV1Q12017T4G | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979247 | TO-247-4 | Tube-packed | - | - | - | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120AM042CD3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3288225 | - | Box-packed | 2 N-Channel | 2.031kW | 495A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 400
| 0 | MSC080SMA120S | Microchip Tech | D3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3288230 | D3PAK | Tape & Reel (TR) | 1 N-channel | 182W | 35A | 1200V | - | - | - | - | - | - | - | - | - | - | - |