Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
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Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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Min: 1 Mult: 1 | 0 | C3M0025065J1 | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7459207 | TO-263-7 | Tube-packed | 1 N-Channel | 271W | 80A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM170AM15CT3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17266502 | - | Bag-packed | 2 N-Channel | 862W | 181A | 1700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF08MR12W1MA1B11ABPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17219455 | - | Tray | 2 N-Channel | - | 150A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0  | MSC017SMA120B4 | Microchip Tech | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3277251 | TO-247-4 | Bag-packed | 1 N-Channel | 455W | 113A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | C3M0160120D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713505 | TO-247-3 | Tube-packed | 1 N-Channel | 97W | 17A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | P3M173K0T3 | PN Junction Semiconductor | TO-220-2L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5823481 | TO-220-2L | Tube-packed | 1 N-Channel | 75W | 4A | 1700V | 2500mΩ | -55℃~+175℃ | - | - | - | 2.2V | Single tube | 4.3pF | 116pF | 3.79nC | - | 12pF | |||
Min: 1 Mult: 1 | 0 | G3R350MT12J | GeneSiC Semiconductor | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6203464 | TO-263-7 | Tube-packed | 1 N-Channel | 75W | 11A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UF3C065080B7S | Qorvo | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136716 | D2PAK-7 | Tape & Reel (TR) | 1 N-Channel | 136.4W | 27A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UF3C120150K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136718 | - | Tube-packed | 1 N-Channel | 166.7W | 18.4A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UF4SC120030K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136722 | - | Tube-packed | 1 N-Channel | 341W | 53A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ4C075018K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136813 | - | Tube-packed | 1 N-Channel | 385W | 81A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ4C075044K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6903068 | TO-247-3 | Tube-packed | 1 N-Channel | 203W | 37.4A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ4C075018K3S | Qorvo | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7136811 | TO-247-3 | Tube-packed | 1 N-Channel | 385W | 81A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | UJ4SC075009K4S | Qorvo | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6582089 | - | Tube-packed | 1 N-Channel | 375W | 106A | 750V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1
Full Reel: 800
| 0 | UJ3C065080B3 | Qorvo | TO-263(D2PAK) Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6731594 | TO-263(D2PAK) | Tape & Reel (TR) | 1 N-Channel | 115W | 25A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | SICW1000N170A-BP | MCC(Micro Commercial Components) | TO-247AB Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19992087 | TO-247AB | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70TAM10TPAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17321458 | - | Bag-packed | 6 N-Channel | 674W | 238A | 700V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120TAM11TPAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17312986 | - | Bag-packed | 6 N-Channel | 1.042kW | 251A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120HM16CTBL3NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17264161 | - | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM120TAM16TPAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17239288 | - | Bag-packed | 6 N-Channel | 728W | 171A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | DF14MR12W1M1HFB67BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20190885 | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | WNSC2M1K0170WQ | WeEn Semiconductors | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20141065 | TO-247-3 | Bag-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF6MR12KM1BOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17487643 | AG-62mm | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | FF2MR12KM1HOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17620139 | AG-62mm | Tray | 2 N-Channel | - | 500A | 1200V | - | - | - | Half Bridge | - | - | - | - | - | - | - | - | |||
Min: 1 Mult: 1 | 0 | MSCSM70AM07T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17466726 | - | Bag-packed | 2 N-Channel | 988W | 353A | 700V | - | - | - | - | - | - | - | - | - | - | - | - |