Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
843
Manufacturer
Package
Operating Temperature
Configuration
Total Gate Charge
V(BR)DSS
Output Capacitance
Vgs(th)
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
843
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Configuration
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Channel Type
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Continuous Drain Current
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V(BR)DSS
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Power Dissipation
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Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Configuration
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Channel Type
|
Continuous Drain Current
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V(BR)DSS
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Power Dissipation
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| | Min: 1 Mult: 1 | 0  | FF2MR12KM1HOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17620139 | AG-62mm | Tray | Half Bridge | 2 N-Channel | 500A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | DF14MR12W1M1HFB67BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20190885 | - | Tray | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70AM10T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17297074 | - | Bag-packed | - | 2 N-Channel | 241A | 700V | 690W | ||
| | Min: 1 Mult: 1 | 0 | FS45MR12W1M1B11 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17443857 | - | Tray | - | 6 N-Channel | 25A | 1200V | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120AM03T6LIAG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17582417 | - | Bag-packed | - | 2 N-Channel | 805A | 1200V | 3.215kW | ||
| | Min: 1 Mult: 1 | 0 | FF6MR12KM1BOSA1 | Infineon Technologies | AG-62mm Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17487643 | AG-62mm | Tray | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70AM07T3AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17466726 | - | Bag-packed | - | 2 N-Channel | 353A | 700V | 988W | ||
| | Min: 1 Mult: 1 | 0 | MSCSM170AM039CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17427285 | - | Bag-packed | - | 2 N-Channel | 523A | 1700V | 2.4kW | ||
| | Min: 1 Mult: 1 | 0 | DMWS120H100SM4 | Diodes Incorporated | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19950047 | TO-247-4 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSC750SMA170SA | Microchip Tech | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296354 | D2PAK-7 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120AM042T6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296356 | - | Bag-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120HRM311AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296361 | - | Bag-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM170HRM075NG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296364 | - | Bag-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM170HRM451AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296367 | - | Bag-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM70VR1M03CT6AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20296369 | - | Bag-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | WNSC2M1K0170WQ | WeEn Semiconductors | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20141065 | TO-247-3 | Bag-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | MSCSM120HM063AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17556666 | - | Bag-packed | - | 4 N-channel | 333A | 1200V | 873W | ||
| | Min: 1 Mult: 1 | 0 | MSCSM170AM45CT1AG | Microchip Tech | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C17567991 | - | Bag-packed | - | 2 N-Channel | 64A | 1700V | 319W | ||
| | Min: 1 Mult: 1 | 0 | S2M0080120N | SMC(Sangdest Microelectronicstronic (Nanjing)) | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18212974 | SOT-227 | Box-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HNTHL020N120SC1 | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389098 | TO-247 | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HNTHL030N120M3S | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389138 | TO-247-3L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HNVH4L080N120SC1 | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389148 | TO-247-4L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HS2M0016120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389158 | TO-247-3L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HNVH4L160N120SC1 | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389105 | TO-247-4L | Tube-packed | - | - | - | - | - | ||
| | Min: 1 Mult: 1 | 0 | HSCT070W120G34 | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42389140 | TO-247-4L | Tube-packed | - | - | - | - | - |