Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
748
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Configuration
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
748
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain Source Threshold Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Encapsulated Type
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain Source Threshold Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Encapsulated Type
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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| | Min: 1 Mult: 1 |
40
(0+40+0)In Stock  | C3M0032120K | Wolfspeed | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5588741 | TO-247-4L | Tube-packed | 1 N-Channel | 283W | 63A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
40
(0+40+0)In Stock | S1M040120D | Sichainsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363606 | TO-247-3L | Tube-packed | 1 N-Channel | 326W | 73A | 1200V | 2.8V | 10pF | 2159pF | 76nC | 40mΩ | -55℃~+175℃ | 32mΩ | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
40
(37+3+0)In Stock | GC2M0160120K | SUPSiC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C21547379 | TO-247-4 | Tube-packed | 1 N-Channel | 125W | 18A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
39
(39+0+0)In Stock | IV1Q12750O3 | InventChip | TO-220-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979250 | TO-220-3 | Tube-packed | 1 N-Channel | 66.9W | 6.4A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 500
|
35
(30+5+0)In Stock | IV2Q171R0D7 | InventChip | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806852 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
34
(0+34+0)In Stock | KN3M50120K | KNSCHA | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5373189 | TO-247-4 | Tube-packed | - | - | 58A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
34
(0+34+0)In Stock | HC3M0060065D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723857 | TO-247-3L | Tube-packed | - | 150W | 37A | 650V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
32
(0+32+0)In Stock | GC3M0016120D | SUPSiC | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435039 | TO247-3 | Tube-packed | 1 N-Channel | 556W | 115A | 1200V | 2.5V | 13pF | 6085pF | 207nC | 16mΩ | - | - | - | - | - | - | 230pF | ||
| | Min: 1 Mult: 1 |
32
(0+32+0)In Stock | S1M075120J2 | Sichainsemi | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363611 | TO-263-7L | Tube-packed | 1 N-Channel | 169W | 39A | 1200V | 2.8V | 4.3pF | 1020pF | 40nC | 75mΩ | -55℃~+175℃ | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M0030065K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449545 | TO-247-4L | Tube-packed | 1 N-Channel | - | 97A | 650V | 2V | - | - | - | - | -55℃~+175℃ | - | - | 25mΩ | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M0045065K1 | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449547 | TO-247-4L | Tube-packed | 1 N-Channel | - | 49A | 650V | 2V | - | - | - | - | -55℃~+175℃ | - | - | 33mΩ | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M00160120D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449549 | TO-247 | Tube-packed | 1 N-Channel | - | 17A | 1200V | 2V | - | - | - | - | -55℃~+175℃ | - | - | 160mΩ | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC1M320120D | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428808 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | HC3M0032120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723855 | TO-247-3L | Tube-packed | - | 283W | 63A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | AS2M040120P | AnBon | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19762685 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | IV1Q06040T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979248 | TO-247-3 | Tube-packed | 1 N-Channel | 348W | 72A | 650V | 3.2V | 10.8pF | 179pF | 110.8nC | - | -55℃~+175℃ | - | - | 40mΩ | Single Tube | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | SC015N065T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493858 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC2M0045170P | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428802 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M0021120D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428807 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | CMS120N080WK | Bruckewell | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C29781282 | TO-247-4 | Tube-packed | 1 N-Channel | 188W | 35A | 1200V | 4V | - | - | 61nC | - | - | - | - | 77mΩ | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | HC2M0040120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723848 | TO-247-4L | Tube-packed | - | 405W | 78A | 1200V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | SC102N170T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493855 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | NTHL040N120M3S | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20625009 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | NTH4L060N090SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2902169 | TO-247-4L | Tube-packed | 1 N-Channel | 221W | 46A | 900V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC1M30065D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428805 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |