Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Configuration
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
749
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
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RoHS
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LCSC Part#
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Package
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Packaging
|
Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Channel Type
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Drain Source Threshold Voltage
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Channel Type
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Output Capacitance
|
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| | Min: 1 Mult: 1 |
30
(0+0+30)In Stock | SC015N065TCL | SPS | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493857 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+0+30)In Stock | SC013N120TCL | SPS | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493859 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | IV1Q12080T4Z | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806849 | TO-247-4 | Tube-packed | - | -55℃~+175℃ | - | - | 80mΩ | 1 N-Channel | - | Single tube | 300W | 42A | 1200V | 6.7pF | 1680pF | 76nC | - | 69pF | ||
| | Min: 1 Mult: 1
Full Reel: 800
|
30
(0+0+30)In Stock | CMS120N080B | Bruckewell | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C29781281 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock  | NTH4L060N090SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2902169 | TO-247-4L | Tube-packed | - | - | - | - | - | 1 N-Channel | - | - | 221W | 46A | 900V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+0+30)In Stock | IV1Q12080T4 | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979244 | TO-247-4 | Tube-packed | - | -55℃~+175℃ | - | - | 80mΩ | 1 N-Channel | 3.6V | Single tube | 300W | 42A | 1200V | 6.7pF | 1680pF | 76nC | - | 69pF | ||
| | Min: 1 Mult: 1 |
30
(0+0+30)In Stock | NTHL040N120M3S | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20625009 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
29
(0+0+29)In Stock | SC075N120T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493862 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
29
(0+0+29)In Stock | NTH4L025N065SC1 | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5209034 | TO-247-4 | Tube-packed | 25mΩ | -55℃~+175℃ | 19mΩ | - | - | 1 N-Channel | 2.8V | Single tube | 174W | 99A | 650V | 25pF | 3480pF | 164nC | - | - | ||
| | Min: 1 Mult: 1 |
29
(0+0+29)In Stock | SC021N120T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493860 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
29
(0+0+29)In Stock | SC032N120T8L | SPS | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493861 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
29
(0+0+29)In Stock | YJD212040NCFG2 | Yangzhou Yangjie Elec Tech | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605668 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
28
(0+22+6)In Stock | HC3M0060065K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723858 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | 150W | 37A | 650V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
28
(0+28+0)In Stock | IMW120R220M1HXKSA1 | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2997930 | TO-247-3 | Tube-packed | - | - | - | - | - | 1 N-Channel | - | - | 75W | 13A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
28
(0+0+28)In Stock | YJD212080NCTG1 | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605692 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
27
(0+0+27)In Stock | IV1Q12080T3Z | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806848 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
25
(0+0+25)In Stock | GC3M0120100K | SUPSiC | TO247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435038 | TO247-4 | Tube-packed | 120mΩ | -55℃~+150℃ | - | - | - | 1 N-Channel | 2.1V | - | 83W | 22A | 1000V | 3pF | 414pF | 22nC | - | 48pF | ||
| | Min: 1 Mult: 1 |
23
(0+23+0)In Stock | IV1Q12080T3 | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979243 | TO-247-3 | Tube-packed | - | -55℃~+175℃ | - | - | 80mΩ | 1 N-Channel | 3.6V | Single tube | 300W | 42A | 1200V | 6.7pF | 1680pF | 76nC | - | - | ||
| | Min: 1 Mult: 1 |
23
(0+0+23)In Stock | CI90N120SM4 | Tokmas | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5364637 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | 90A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
23
(0+23+0)In Stock | IMZA65R048M1H | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536298 | TO-247-4 | Tube-packed | - | -55℃~+150℃ | 48mΩ | - | - | 1 N-Channel | 4.5V | Single tube | 125W | 100A | 650V | 13pF | 1118pF | 33nC | - | - | ||
| | Min: 1 Mult: 1 |
21
(0+21+0)In Stock | S1M075120H2 | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363608 | TO-247-4L | Tube-packed | 75mΩ | -55℃~+175℃ | 60mΩ | - | - | 1 N-Channel | 2.8V | - | 224W | 44A | 1200V | 3.8pF | 1037pF | 40nC | - | - | ||
| | Min: 1 Mult: 1 |
20
(0+0+20)In Stock | S1M075120H1 | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363607 | TO-247-4L | Tube-packed | - | -55℃~+175℃ | 70mΩ | - | - | 1 N-Channel | 2.8V | - | 214W | 38A | 1200V | 3.9pF | 920pF | 40nC | - | - | ||
| | Min: 1 Mult: 1 |
20
(0+0+20)In Stock | HC3M0075120D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723859 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | 136W | 32A | 1200V | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
20
(0+0+20)In Stock | S1M075120D2 | Sichainsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363610 | TO-247-3L | Tube-packed | 75mΩ | -55℃~+175℃ | - | - | - | 1 N-Channel | 2.8V | - | 214W | 44A | 1200V | 4.3pF | 1020pF | 40nC | - | - | ||
| | Min: 1 Mult: 1 |
20
(0+0+20)In Stock | SG2M021120L | Sichainsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C37636034 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |