Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
843
Manufacturer
Package
Operating Temperature
Configuration
Total Gate Charge
V(BR)DSS
Output Capacitance
Vgs(th)
Reverse Transfer Capacitance
Continuous Drain Current
Power Dissipation
Encapsulated Type
Drain-Source On-State Resistance(20V)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Results:
843
Images
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Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Channel Type
|
Vgs(th)
|
Encapsulated Type
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Drain-Source On-State Resistance(15V)
|
Drain-Source On-State Resistance(18V)
|
Operating Temperature
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Power Dissipation
|
Continuous Drain Current
|
V(BR)DSS
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Channel Type
|
Vgs(th)
|
Encapsulated Type
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
Drain-Source On-State Resistance(15V)
|
Drain-Source On-State Resistance(18V)
|
Operating Temperature
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | BCZ120N80M1 | Bestirpower | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42401698 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | BCZ120N21M1 | Bestirpower | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42401699 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | BCZ120N160W1 | Bestirpower | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C42401701 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC2M0045170P | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428802 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M0021120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428803 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock | HC2M0040120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723848 | TO-247-4L | Tube-packed | 405W | 78A | 1200V | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
|
30
(0+30+0)In Stock | CMS120N080B | Bruckewell | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C29781281 | TO-263-7 | Tape & Reel (TR) | 188W | 35A | 1200V | - | 77mΩ | 1 N-channel | 4V | - | 61nC | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(30+0+0)In Stock  | NTH4L060N090SC1 | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2902169 | TO-247-4L | Tube-packed | 221W | 46A | 900V | - | - | 1 N-channel | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | SC013N120TCL | SPS | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493859 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | SC060N065T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493856 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC1M30065D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428805 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC2M0650170D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428806 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC1M40120D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428809 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC1M60120D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C41428810 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | NTHL040N120M3S | onsemi | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20625009 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
30
(0+30+0)In Stock | HC3M00160120D | HXY MOSFET | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22449549 | TO-247 | Tube-packed | - | 17A | 1200V | - | 160mΩ | 1 N-channel | 2V | - | - | - | - | - | -55℃~+175℃ | ||
| | Min: 1 Mult: 1 |
29
(0+29+0)In Stock | SC032N120T8L | SPS | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493861 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
29
(0+29+0)In Stock | SC015N065TCL | SPS | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493857 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
29
(0+29+0)In Stock | SC021N120T8L | SPS | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493860 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
28
(22+6+0)In Stock | HC3M0060065K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723858 | TO-247-4L | Tube-packed | 150W | 37A | 650V | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
28
(0+28+0)In Stock | YJD212080NCTG1 | Yangzhou Yangjie Elec Tech | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C20605692 | TO-247 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
27
(0+27+0)In Stock | IV1Q12080T3Z | InventChip | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806848 | TO-247-3 | Tube-packed | - | - | 1200V | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
27
(0+27+0)In Stock | HC2M0045170D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723849 | TO-247-3L | Tube-packed | 520W | 72A | 1700V | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
26
(0+26+0)In Stock | HC3M0075120K | HXY MOSFET | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723860 | TO-247-4L | Tube-packed | 136W | 32A | 1200V | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
26
(26+0+0)In Stock | IMW120R045M1 | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C476131 | TO-247-3 | Tube-packed | 228W | 52A | 1200V | - | - | 1 N-channel | - | - | - | - | - | - | - |