Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
749
Manufacturer
Package
Drain Source Voltage
Operating Temperature
Input Capacitance (Ciss@Vds)
Configuration
Drain Source Voltage (Vdss)
Power Dissipation (Pd)
Total Gate Charge
Drain Source Threshold Voltage
Output Capacitance
Reverse Transfer Capacitance
Drain Source On Resistance (RDS(on)@Vgs,Id)
Continuous Drain Current
Power Dissipation
Encapsulated Type
Continuous Drain Current (Id)
Type
Drain-Source On-State Resistance(20V)
Gate Threshold Voltage (Vgs(th)@Id)
Channel Type
Drain-Source On-State Resistance(18V)
Input Capacitance
Drain-Source On-State Resistance(15V)
Total Gate Charge (Qg@Vgs)
Results:
749
Images
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Pricing
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Quantity
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Availability
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Mfr.Part #
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Manufacturer
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Description
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RoHS
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LCSC Part#
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Package
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Packaging
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Channel Type
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Power Dissipation
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Continuous Drain Current
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Drain Source Voltage
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Drain-Source On-State Resistance(15V)
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Operating Temperature
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Drain-Source On-State Resistance(18V)
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Configuration
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Drain-Source On-State Resistance(20V)
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Drain Source Threshold Voltage
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Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
Channel Type
|
Power Dissipation
|
Continuous Drain Current
|
Drain Source Voltage
|
Drain-Source On-State Resistance(15V)
|
Operating Temperature
|
Drain-Source On-State Resistance(18V)
|
Configuration
|
Drain-Source On-State Resistance(20V)
|
Drain Source Threshold Voltage
|
Encapsulated Type
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Drain-Source On-State Resistance(10V)
|
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| | Min: 1 Mult: 1 |
5
(0+5+0)In Stock | C3M0120090D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713506 | TO-247-3 | Tube-packed | 1 N-Channel | 97W | 23A | 900V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+5+0)In Stock | C3M0120090J | Wolfspeed | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713504 | TO-263-7 | Tube-packed | 1 N-Channel | 83W | 22A | 900V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock  | AIMW120R035M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289085 | TO-247-3-41 | Tube-packed | 1 N-Channel | 228W | 52A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+5+0)In Stock | IMW65R027M1HXKSA1 | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2879870 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | IMW120R140M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6210721 | TO-247-3-41 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+3+2)In Stock | IV1Q06040T4 | InventChip | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2979249 | TO-247-4 | Tube-packed | 1 N-Channel | 348W | 72A | 650V | - | -55℃~+175℃ | - | - | 40mΩ | 3.2V | Single tube | 10.8pF | 2692pF | 110.8nC | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | S2M0040120K-1 | SMC(Sangdest Microelectronicstronic (Nanjing)) | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18212968 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | S2M0025120J | SMC(Sangdest Microelectronicstronic (Nanjing)) | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18212967 | TO-263-7 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | S2M0040120D-1 | SMC(Sangdest Microelectronicstronic (Nanjing)) | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18212969 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | G3R350MT12D | Navitas | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C25836785 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | MSC035SMA070B4 | Microchip Tech | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C6684980 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+5+0)In Stock | C3M0280090D | Wolfspeed | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5567657 | TO-247-3 | Tube-packed | 1 N-Channel | 54W | 11.5A | 900V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+5+0)In Stock | AIMW120R060M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278942 | TO-247-3-41 | Tube-packed | 1 N-Channel | 150W | 36A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 800
|
5
(0+5+0)In Stock | IV1Q12160D7Z | InventChip | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806850 | TO-263-7 | Tape & Reel (TR) | - | - | - | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | C3M0075120J | Wolfspeed | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5567652 | D2PAK-7 | Tube-packed | 1 N-Channel | 113.6W | 30A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+5+0)In Stock | IV1B12013HA1L | InventChip | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5806854 | - | Bag-packed | - | - | - | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+0+5)In Stock | G3R30MT12K | Navitas | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C25836780 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
5
(0+5+0)In Stock | SCTW35N65G2VAG | STMicroelectronics | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3281062 | TO-247-3 | Tube-packed | 1 N-Channel | 240W | 45A | 650V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
4
(0+0+4)In Stock | HC3M0060065D | HXY MOSFET | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19723857 | TO-247-3L | Tube-packed | - | 150W | 37A | 650V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
4
(0+0+4)In Stock | NVH4L040N120M3S | onsemi | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673852 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
4
(0+3+1)In Stock | C3M0075120K | Wolfspeed | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5693030 | TO-247-4 | Tube-packed | 1 N-Channel | 113.6W | 30A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
4
(0+0+4)In Stock | IMZ120R030M1HXKSA1 | Infineon Technologies | TO-247-4-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289091 | TO-247-4-1 | Tube-packed | 1 N-Channel | 227W | 56A | 1200V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
|
4
(0+0+4)In Stock | IMBF170R650M1XTMA1 | Infineon Technologies | TO-263-7-13 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3289295 | TO-263-7-13 | Tape & Reel (TR) | 1 N-Channel | 88W | 7.4A | 1700V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
4
(0+0+4)In Stock | NTH4L045N065SC1 | onsemi | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2902168 | TO-247-4 | Tube-packed | 1 N-Channel | 187W | 55A | 650V | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
3
(0+0+3)In Stock | SCTWA90N65G2V | STMicroelectronics | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3290673 | TO-247 | Tube-packed | 1 N-Channel | 565W | 119A | 650V | - | - | - | - | - | - | - | - | - | - | - |